公开(公告)号：US10358721B2

公开(公告)日：2019-07-23

申请号：US15087736

申请日：2016-03-31

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn Kim ,  Hie Chul Kim ,  Hyun Soo Jang

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  C23C16/509 ,  H01J37/32

Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.

公开(公告)号：US20190035647A1

公开(公告)日：2019-01-31

申请号：US16039938

申请日：2018-07-19

Applicant: ASM IP Holding B.V.

Inventor： Ju Il Lee ,  Hie Chul Kim ,  Dae Youn Kim

IPC: H01L21/67

Abstract: Provided is a substrate-processing device capable of preventing a top lid from sagging downward by the own weight of the substrate-processing device and/or a vacuum suction force generated by a vacuum pump and/or thermal shock at high temperature process, in a chamber including a plurality of reactors. Also, provided is a rotating shaft for transferring a substrate between the plurality of reactors.

公开(公告)号：USD787458S1

公开(公告)日：2017-05-23

申请号：US29555303

申请日：2016-02-19

Applicant: ASM IP Holding B.V.

Designer： Dae Youn Kim ,  Hie Chul Kim ,  Hyun Soo Jang

公开(公告)号：US20170114460A1

公开(公告)日：2017-04-27

申请号：US15087736

申请日：2016-03-31

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn Kim ,  Hie Chul Kim ,  Hyun Soo Jang

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.