公开(公告)号：US20180223424A1

公开(公告)日：2018-08-09

申请号：US15945863

申请日：2018-04-05

Applicant: ASM IP Holding B.V.

Inventor： Young-Jae KIM ,  Ki Jong KIM ,  Dong-Rak JUNG ,  Hak Yong KWON ,  Seung Woo CHOI

IPC: C23C16/44 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4401 ,  C23C16/4586 ,  H01L21/68742

Abstract: A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.

公开(公告)号：US20140109832A1

公开(公告)日：2014-04-24

申请号：US14057160

申请日：2013-10-18

Applicant: ASM IP Holding B.V.

Inventor： Ki Jong KIM ,  Dae Youn Kim ,  Hyun Soo Jang

IPC: C23C16/452

CPC classification number: C23C16/452 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32577

Abstract: In a deposition apparatus, as a plurality of plasma connection terminals that transfer plasma power to a plasma electrode are coupled in parallel to the plasma electrode, resistance caused by the plurality of plasma connection terminals is reduced and a current is distributed such that heat generated in the plurality of plasma connection terminals can be distributed. Therefore, even if high RF power is used, by preventing the plurality of plasma connection terminals from being oxidized, plasma is stably supplied and thus, stability of a deposition apparatus and the accuracy of a process can be enhanced.

Abstract translation: 在沉积装置中，作为将等离子体电力传递到等离子体电极的多个等离子体连接端子与等离子体电极并联耦合，减少了由多个等离子体连接端子引起的电阻，并且分配电流，使得在 可以分配多个等离子体连接端子。 因此，即使使用高的RF功率，通过防止多个等离子体连接端子被氧化，也能稳定地供给等离子体，能够提高蒸镀装置的稳定性和处理精度。

公开(公告)号：US20140072726A1

公开(公告)日：2014-03-13

申请号：US14020988

申请日：2013-09-09

Applicant: ASM IP Holding B.V.

Inventor： Ki Jong KIM

IPC: C23C16/50

CPC classification number: C23C16/50

Abstract: A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by supplying a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by supplying nitrogen gas as a charge gas, even if high plasma power is supplied, parasitic plasma can be effectively prevented from being generated in the external chamber.

Abstract translation: 提供了沉积设备和使用其沉积薄膜的方法。 通过向反应空间与外壁之间的空间的外部室供给充电气体，通过保持反应空间和略微低于反应空间压力的外壁之间的外部室的压力，可以防止寄生等离子体 在外部室内产生。 当加载或卸载基板时，即使提供高等离子体电力，也可以防止外部室的充电气体向后流向反应空间，并且通过供给氮气作为充电气体，可以有效地防止寄生等离子体 在外部室产生。