公开(公告)号：USD830981S1

公开(公告)日：2018-10-16

申请号：US29604288

申请日：2017-05-16

Applicant: ASM IP Holding B.V.

Designer： Sang Jin Jeong ,  Jeung Hoon Han ,  Young Seok Choi ,  Ju Hyuk Park

公开(公告)号：US09496166B2

公开(公告)日：2016-11-15

申请号：US14735253

申请日：2015-06-10

Applicant: ASM IP Holding B.V.

Inventor： Young Seok Choi

IPC: B66F19/00 ,  H01L21/687 ,  B25J11/00

CPC classification number: H01L21/68707 ,  B25J11/0095

Abstract: A substrate transporting arm and a substrate transporting apparatus to prevent a substrate from sliding and increase a process speed of the substrate, thereby improving productivity. The substrate transporting arm includes a body and a plurality of substrate supporters coupled to the body. Each of the plurality of substrate supporters includes a substrate holder and a substrate supporter pin, and an inner side of the substrate holder includes an inclined portion.

Abstract translation: 基板输送臂和基板输送装置，以防止基板滑动并提高基板的处理速度，从而提高生产率。 衬底传送臂包括主体和耦合到主体的多个衬底支撑件。 多个基板支撑体中的每一个包括基板保持件和基板支撑销，并且基板保持器的内侧包括倾斜部。

公开(公告)号：US20180350653A1

公开(公告)日：2018-12-06

申请号：US15985539

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： Sang Jin Jeong ,  Jeung Hoon Han ,  Young Seok Choi ,  Ju Hyuk Park

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Provided is a substrate supporting device which prevents intrusion of a process gas into a rear surface of a substrate in a high-temperature process. The substrate supporting device includes a support portion configured to have a line contact with an edge exclusion zone of the substrate that is deformed at a specific temperature.

公开(公告)号：US09679750B2

公开(公告)日：2017-06-13

申请号：US14275912

申请日：2014-05-13

Applicant: ASM IP Holding B.V.

Inventor： Young Seok Choi ,  Dae Youn Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.