公开(公告)号：US20230323534A1

公开(公告)日：2023-10-12

申请号：US18205716

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  HaRim Kim ,  YoonKi Min ,  KyungEun Lee ,  Zhenyu Jin ,  HakJoon Lee

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/34

CPC classification number: C23C16/45536 ,  H01L21/0228 ,  H01J37/32449 ,  H01J37/32082 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02211 ,  H01L21/02164 ,  H01L21/0217 ,  C23C16/4404 ,  C23C16/345 ,  H01J2237/332

Abstract: A substrate processing method capable of forming a film with an improved step coverage and/or improved and/or more uniform properties on a surface of a gap structure having a high aspect ratio is provided. An exemplary substrate processing method includes: providing a gap structure; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.