Lithographic projection apparatus and reflector assembly for use therein
    1.
    发明申请
    Lithographic projection apparatus and reflector assembly for use therein 有权
    平版印刷设备和用于其中的反射器组件

    公开(公告)号:US20040109151A1

    公开(公告)日:2004-06-10

    申请号:US10639753

    申请日:2003-08-13

    Abstract: A lithographic projection apparatus includes a radiation system configured to form a projection beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the projection beam provides the projection beam with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.

    Abstract translation: 光刻投影设备包括辐射系统,该辐射系统被配置为从由辐射源发射的辐射形成辐射的投射光束,以及被配置为保持图案形成装置的支撑件,当图案形成装置被投影光束照射时,投影光束提供图案 。 衬底台被配置为保持衬底,并且投影系统被配置为将图案形成装置的照射部分成像到衬底的目标部分上。 辐射系统还包括距离光轴一定距离处的孔,当从源观察时,放置在孔后面的反射器和放置在孔后面的低辐射密集区域中的结构。

    Lithographic apparatus and device manufacturing method
    2.
    发明申请
    Lithographic apparatus and device manufacturing method 失效
    平版印刷设备和器件制造方法

    公开(公告)号:US20030142280A1

    公开(公告)日:2003-07-31

    申请号:US10328174

    申请日:2002-12-26

    CPC classification number: B82Y10/00 G03F7/70033 G03F7/70908

    Abstract: A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.

    Abstract translation: 光刻设备包括含有等离子体源的第一空间,并且还包含可在设备的投影光束的波长处具有高吸收辐射的源气体,该气体被限制为通过以下方式进入光刻系统的其余部分: 第二空间包含在设备的投影光束的波长处具有低吸收的缓冲气体。 缓冲气体的压力低于或等于源气体的压力。

    Lithographic apparatus and device manufacturing method
    3.
    发明申请
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US20040165160A1

    公开(公告)日:2004-08-26

    申请号:US10733771

    申请日:2003-12-12

    CPC classification number: G03F7/70925 B08B7/0057

    Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes a substrate holder that is constructed to hold a substrate, a projection system that is constructed and arranged to project the patterned beam onto a target portion of the substrate, and a downstream radical source that is connected to a gas supply and is configured to provide a beam of radicals onto a surface to be cleaned.

    Abstract translation: 公开了一种光刻投影装置。 该装置包括构造成支撑图形结构的支撑结构。 图形结构适于根据期望的图案对辐射束进行图案化。 该装置还包括被构造成保持基板的基板保持器,被构造和布置成将图案化的光束投影到基板的目标部分上的投影系统,以及连接到气体源的下游自由基源,并且是 被配置为在待清洁的表面上提供自由基束。

Patent Agency Ranking