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公开(公告)号：US20170160073A1
公开(公告)日：2017-06-08
申请号：US15432684
申请日：2017-02-14
发明人： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonardus Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Li CHUNG-HSUN
CPC分类号： G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
摘要： In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US20190235392A1
公开(公告)日：2019-08-01
申请号：US16318191
申请日：2017-06-29
发明人： Andre Bernardus JEUNINK , Laurentius Johannes Adrianus VAN BOKHOVEN , Stan Henricus VAN DER MEULEN , Yang-Shan HUANG , Federico LA TORRE , Barry MOEST , Stefan Carolus Jacobus Antonius KEIJ , Enno VAN DEN BRINK , Christine Henriette SCHOUTEN , Hoite Pieter Theodoor TOLSMA
摘要： A lithographic apparatus has a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.
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公开(公告)号：US20200319118A1
公开(公告)日：2020-10-08
申请号：US16905629
申请日：2020-06-18
发明人： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonard us Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Chung-Hsun LI
IPC分类号： G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
摘要： In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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4.发明申请公开(公告)号：US20180246420A1
公开(公告)日：2018-08-30
申请号：US15753695
申请日：2016-08-23
IPC分类号： G03F7/20
CPC分类号： G03F7/70666 , G03F7/70525 , G03F7/706 , G03F7/70633 , G03F9/7088
摘要： A method comprises determining at least one property of a first marker feature corresponding to a marker of a lithographic patterning device installed in a lithographic apparatus, wherein the first marker feature comprises a projected image of the marker obtained by projection of radiation through the lithographic patterning device by the lithographic apparatus, the determining of at least one property of the projected image of the marker comprises using an image sensor to sense radiation of the projected image prior to formation of at least one desired lithographic feature on the substrate, and the method further comprises determining at least one property of a second marker feature arising from the same marker, after formation of said at least one desired lithographic feature on the substrate.
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