公开(公告)号：US09958788B2

公开(公告)日：2018-05-01

申请号：US15405009

申请日：2017-01-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Vitaliy Prosyentsov ,  Willem Jurrianus Venema ,  Kars Zeger Troost ,  Adrianus Martinus Van Der Wielen

IPC: G03B27/42 ,  G03F7/20 ,  G03F1/44

CPC classification number: G03F7/705 ,  G03F1/44 ,  G03F7/70133 ,  G03F7/70783 ,  G03F7/70875

Abstract: A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a fine (s, s1, s2) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

公开(公告)号：US09568833B2

公开(公告)日：2017-02-14

申请号：US14512120

申请日：2014-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Vitaliy Prosyentsov ,  Willem Jurrianus Venema ,  Kars Zeger Troost ,  Adrianus Martinus Van Der Wielen

IPC: G03B27/42 ,  G03F7/20 ,  G03F1/44

CPC classification number: G03F7/705 ,  G03F1/44 ,  G03F7/70133 ,  G03F7/70783 ,  G03F7/70875

Abstract: A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a line (s, s1, s2) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

Abstract translation: 光刻掩模版被照射以将图案转印到基板上，引起由于加热引起的变形。 使用标线的周边部分中的参考标记计算变形，并测量其相对位置随时间的变化。 定义了可以解决方程组的系统以计算每个单元的扩张的多个单元。 在一个实施例中，每个方程将标记对对于沿着连接每对的线（s，s1，s2）的细胞的扩张的位置。 可以通过组合至少一个测量的外围标记和位置之间的单元格的计算的扩张来计算位置的局部位置偏差。 校正可以根据计算结果进行应用。 可以将能量施加到图案形成装置（例如通过热输入或机械致动器）以修改局部位置偏差的分布。

公开(公告)号：US11815808B2

公开(公告)日：2023-11-14

申请号：US17280248

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Kars Zeger Troost ,  Eelco Van Setten ,  Duan-Fu Stephen Hsu

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/22 ,  G03F7/00

CPC classification number: G03F1/36 ,  G03F1/22 ,  G03F7/705 ,  G03F7/70125

Abstract: A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

公开(公告)号：US09176392B2

公开(公告)日：2015-11-03

申请号：US14190147

申请日：2014-02-26

Applicant: ASML Netherlands B.V.

Inventor： Kars Zeger Troost ,  Arno Jan Bleeker

IPC: G03F7/20

CPC classification number: G03F7/70058 ,  G03F7/70275 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70425

Abstract: A system and method are used to manufacture a device using at least one exposure step. Each exposure step projects a patterned beam of radiation onto a substrate. The patterned beam includes a plurality of pixels. Each pixel delivers a radiation dose no greater than a predetermined normal maximum dose to the target portion in the exposure step and/or at least one selected pixel delivers an increased radiation dose, greater than the normal maximum dose. The increased dose may be delivered to compensate for the effect of a defective element at a known position in the array on a pixel adjacent a selected pixel or compensate for underexposure of the target portion at the location of a selected pixel resulting from exposure of that location to a pixel affected by a known defective element in another exposure step.

Abstract translation: 使用系统和方法来制造使用至少一个曝光步骤的装置。 每个曝光步骤将图案化的辐射束投射到衬底上。 图案化的波束包括多个像素。 每个像素在曝光步骤中向目标部分提供不大于预定正常最大剂量的辐射剂量，和/或至少一个所选择的像素传递大于正常最大剂量的增加的辐射剂量。 可以递送增加的剂量以补偿阵列中与已选择像素相邻的像素处的已知位置处的有缺陷元件的影响，或者补偿由于该位置的曝光导致的所选像素的位置处的目标部分的曝光不足 涉及在另一曝光步骤中受已知缺陷元件影响的像素。

公开(公告)号：US20150029481A1

公开(公告)日：2015-01-29

申请号：US14512120

申请日：2014-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Vitaliy PROSYENTSOV ,  Willem Jurrianus Venema ,  Kars Zeger Troost ,  Adrianus Martinus Van Der Wielen

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F1/44 ,  G03F7/70133 ,  G03F7/70783 ,  G03F7/70875

Abstract: A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a line (s, s1, s2) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

Abstract translation: 光刻掩模版被照射以将图案转印到基板上，引起由于加热引起的变形。 使用标线的周边部分中的参考标记计算变形，并测量其相对位置随时间的变化。 定义了可以解决方程组的系统以计算每个单元的扩张的多个单元。 在一个实施例中，每个方程将标记对对于沿着连接每对的线（s，s1，s2）的细胞的扩张的位置。 可以通过组合至少一个测量的外围标记和位置之间的单元格的计算的扩张来计算位置的局部位置偏差。 校正可以根据计算结果进行应用。 可以将能量施加到图案形成装置（例如通过热输入或机械致动器）以修改局部位置偏差的分布。