-
公开(公告)号：US09798225B2
公开(公告)日：2017-10-24
申请号：US15034105
申请日：2014-10-14
Applicant: ASML Netherlands B.V.
CPC classification number: G03F1/24 , G03F1/22 , G03F1/38 , G03F1/44 , G03F1/68 , G03F1/70 , G03F7/2004 , G03F7/70433 , G03F7/70616 , G03F7/70625 , G03F7/70683
Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
-
公开(公告)号：US11314174B2
公开(公告)日：2022-04-26
申请号：US16645672
申请日：2018-08-03
Applicant: ASML Netherlands B.V.
Inventor： Laurentius Cornelius De Winter , Roland Pieter Stolk , Frank Staals , Anton Bernhard Van Oosten , Paul Christiaan Hinnen , Marinus Jochemsen , Thomas Theeuwes , Eelco Van Setten
Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
-
公开(公告)号：US10928735B2
公开(公告)日：2021-02-23
申请号：US16698868
申请日：2019-11-27
Applicant: ASML Netherlands B.V.
Abstract: A patterning device for use with a lithographic apparatus, the device comprising an absorber portion configured to absorb incident radiation and to reflect a portion of incident radiation, the absorber portion comprising a first layer and a second layer, the first layer of the absorber portion comprising a first material that is different from a second material of the second layer of the absorber portion; a reflector portion arranged beneath the absorber portion, the reflector portion being configured to reflect incident radiation; and a phase tune portion arranged between the reflector portion and the absorber portion, the phase tune portion being configured to induce a phase shift between the radiation reflected by the reflector portion and the portion of radiation reflected by the absorber portion such that the radiation reflected by the reflector portion destructively interferes with the portion of radiation reflected by the absorber portion.
-
公开(公告)号：US11815808B2
公开(公告)日：2023-11-14
申请号：US17280248
申请日：2019-10-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Kars Zeger Troost , Eelco Van Setten , Duan-Fu Stephen Hsu
CPC classification number: G03F1/36 , G03F1/22 , G03F7/705 , G03F7/70125
Abstract: A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.
-
-
-
Search Results
4
records
(took 0.015 seconds)
