公开(公告)号：US11982947B2

公开(公告)日：2024-05-14

申请号：US18070155

申请日：2022-11-28

Applicant: ASML Netherlands B.V.

Inventor： Sander Catharina Reinier Derks ,  Daniel Jozef Maria Direcks ,  Maurice Wilhelmus Leonardus Hendricus Feijts ,  Pieter Gerardus Mathijs Hoeijmakers ,  Katja Cornelia Joanna Clasina Moors ,  Violeta Navarro Paredes ,  William Peter Van Drent ,  Jan Steven Christiaan Westerlaken

IPC: G03F7/00 ,  H05G2/00

CPC classification number: G03F7/70916 ,  G03F7/70033 ,  G03F7/70891 ,  H05G2/005 ,  H05G2/008

Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m−1 K−1.

公开(公告)号：US11556067B2

公开(公告)日：2023-01-17

申请号：US17603687

申请日：2020-03-10

Applicant: ASML Netherlands B.V.

Inventor： Sander Catharina Reinier Derks ,  Daniel Jozef Maria Direcks ,  Maurice Wilhelmus Leonardus Hendricus Feijts ,  Pieter Gerardus Mathijs Hoeijmakers ,  Katja Cornelia Joanna Clasina Moors ,  Violeta Navarro Paredes ,  William Peter Van Drent ,  Jan Steven Christiaan Westerlaken

IPC: G03F7/20 ,  H05G2/00

Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m−1K−1.

公开(公告)号：US10018924B2

公开(公告)日：2018-07-10

申请号：US15014829

申请日：2016-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Raymond Wilhelmus Louis Lafarre ,  Nicolaas Ten Kate ,  Nina Vladimirovna Dziomkina ,  Yogesh Pramod Karade ,  Siegfried Alexander Tromp ,  Jacobus Josephus Leijssen ,  Elisabeth Corinne Rodenburg ,  Maurice Wilhelmus Leonardus Hendricus Feijts ,  Hendrik Huisman

IPC: G03B27/58 ,  G03F7/20 ,  G01J5/20 ,  G01J5/02 ,  B05D3/02

CPC classification number: G03F7/70716 ,  B05D3/02 ,  G01J5/0285 ,  G01J5/20 ,  G03F7/70341 ,  G03F7/70708

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The thin film stack comprises an (optional) isolation layer, a metal layer forming an electrode, a sensor, a heater, a transistor or a logic device, and a top isolation layer.