公开(公告)号：US20210088917A1

公开(公告)日：2021-03-25

申请号：US16772022

申请日：2018-12-07

Applicant: ASML Netherlands B.V.

Inventor： Cyrus Emil TABERY ,  Simon Hendrik Celine VAN GORP ,  Simon Philip Spencer HASTINGS ,  Brennan PETERSON

IPC: G03F7/20 ,  H01L21/66 ,  H01L23/544

Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

公开(公告)号：US20200152527A1

公开(公告)日：2020-05-14

申请号：US16625861

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Andre Bernardus JEUNINK ,  Victoria VORONINA ,  Tamara DRUZHININA ,  Brennan PETERSON ,  Johannes Adrianus Cornelis Maria PIJNENBURG

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/311 ,  G03F9/00

Abstract: A method for revealing sensor targets on a substrate covered with a layer, the method including: obtaining locations of first areas on the substrate with yielding target portions and of second areas on the substrate with non-yielding target portions; at least partially removing feature regions of the layer covering sensor targets in the second areas to reveal sensor targets in the second areas; measuring a location of the revealed sensor targets in the second areas; determining a location of sensor targets in the first areas based on the measured location of the revealed sensor targets in the second areas; and at least partially removing sensor target regions of the layer covering the sensor targets in the first areas using the determined location of the sensor targets in the first areas.

公开(公告)号：US20240126181A1

公开(公告)日：2024-04-18

申请号：US18511454

申请日：2023-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20200159134A1

公开(公告)日：2020-05-21

申请号：US16629359

申请日：2018-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： An GAO ,  Sanjaysingh LALBAHADOERSING ,  Audrey Alexandrovich NIKIPELOV ,  Alexey Olegovich POLYAKOV ,  Brennan PETERSON

IPC: G03F9/00 ,  G03F7/20 ,  H01L23/544

Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.

公开(公告)号：US20200097633A1

公开(公告)日：2020-03-26

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi MAHAJAN ,  Abraham SLACHTER ,  Brennan PETERSON ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Antonio CORRADI ,  Pieter Joseph Marie WÖLTGENS

IPC: G06F17/50 ,  G03F7/20

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.

公开(公告)号：US20210356874A1

公开(公告)日：2021-11-18

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20210018850A1

公开(公告)日：2021-01-21

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.