公开(公告)号：US09594029B2

公开(公告)日：2017-03-14

申请号：US14355962

申请日：2012-11-22

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Li Chung-Hsun

IPC: G01N21/95 ,  G01B11/02 ,  G01B11/14 ,  G05B19/418 ,  G03F7/20 ,  G01N21/956 ,  H01L21/66

CPC classification number: G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  G05B2219/37224 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。

公开(公告)号：US20140354969A1

公开(公告)日：2014-12-04

申请号：US14355962

申请日：2012-11-22

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Li Chung-Hsun

IPC: G01N21/95 ,  H01J37/317 ,  G01N23/20

CPC classification number: G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  G05B2219/37224 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。