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    ILLUMINATION SYSTEM AND LITHOGRAPHIC APPARATUS
    4.
    发明申请
    ILLUMINATION SYSTEM AND LITHOGRAPHIC APPARATUS 有权
    照明系统和平面设备

    公开(公告)号：US20150241792A1

    公开(公告)日：2015-08-27

    申请号：US14709135

    申请日：2015-05-11

    Applicant: ASML NETHERLANDS B.V. ,  CARL ZEISS SMT GmbH

    Inventor： Heine Melle MULDER ,  Steven George Hansen ,  Johannes Catharinus Hubertus Mulkens ,  Markus Deguenther

    IPC: G03F7/20

    CPC classification number: G03F7/70566 ,  G03F7/70091 ,  G03F7/70116

    Abstract: An illumination system is disclosed having a polarization member that includes first and second polarization modifiers movable into at least partial intersection with a radiation beam such that the respective polarization modifier applies a modified polarization to at least part of the beam. The illumination system further includes an array of individually controllable reflective elements positioned to receive the radiation beam after it has passed the polarization member, and a controller configured to control movement of the first and second polarization modifiers such that the first and second polarization modifiers intersect with different portions of the radiation beam.

    Abstract translation: 公开了一种照明系统，其具有偏振构件，该偏振构件包括可移动成与辐射束至少部分交叉的第一和第二偏振修正器，使得各个偏振修正器对至少部分光束施加修改的偏振。 所述照明系统还包括可独立控制的反射元件的阵列，其定位成在辐射束已经通过所述偏振构件之后接收所述辐射束;以及控制器，被配置为控制所述第一和第二偏振调节剂的运动，使得所述第一和第二偏振调节剂与 辐射束的不同部分。

    Failure model for predicting failure due to resist layer
    5.
    发明授权
    Failure model for predicting failure due to resist layer 有权

    公开(公告)号：US11354484B2

    公开(公告)日：2022-06-07

    申请号：US17288167

    申请日：2019-10-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Steven George Hansen

    IPC: G06F30/30 ,  G03F7/20 ,  G06F30/398 ,  G06F30/392

    Abstract: A method of determining a failure model of a resist process of a patterning process. The method includes obtaining (i) measured data of a pattern failure (e.g., failure rate) related to a feature printed on a substrate based on a range of values of dose, and (ii) image intensity values for the feature via simulating a process model using the range of the dose values; and determining, via fitting the measured data of the pattern failure to a product of the dose values and the image intensity values, a failure model to model a stochastic behavior of spatial fluctuations in the resist and optionally predict failure of the feature (e.g., hole closing).

    Model for calculating a stochastic variation in an arbitrary pattern
    6.
    发明授权
    Model for calculating a stochastic variation in an arbitrary pattern 有权

    公开(公告)号：US11126090B2

    公开(公告)日：2021-09-21

    申请号：US16751660

    申请日：2020-01-24

    Applicant: ASML Netherlands B.V.

    Inventor： Steven George Hansen

    IPC: G06F30/30 ,  G06F30/367 ,  G06F30/398 ,  G03F7/20 ,  G03F1/70 ,  G06F119/18

    Abstract: A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the design variables, from a distribution of the values of the characteristic for that set of values of the design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the design variables.

    Model for estimating stochastic variation
    8.
    发明授权
    Model for estimating stochastic variation 有权

    公开(公告)号：US10795267B2

    公开(公告)日：2020-10-06

    申请号：US16462569

    申请日：2017-11-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Steven George Hansen

    IPC: G03B27/54 ,  G03F7/20 ,  G06F7/70

    Abstract: A method including: obtaining a resist process dose sensitivity value for a patterning process; applying the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of resist process dose sensitivity to obtain a value of the stochastic variable; and designing or modifying a parameter of the patterning process based on the stochastic variable value.

    MODEL FOR CALCULATING A STOCHASTIC VARIATION IN AN ARBITRARY PATTERN
    9.
    发明申请
    MODEL FOR CALCULATING A STOCHASTIC VARIATION IN AN ARBITRARY PATTERN 审中-公开

    公开(公告)号：US20200159125A1

    公开(公告)日：2020-05-21

    申请号：US16751660

    申请日：2020-01-24

    Applicant: ASML Netherlands B.V.

    Inventor： Steven George Hansen

    IPC: G03F7/20 ,  G03F1/70 ,  G06F30/398 ,  G06F30/367 ,  G06F30/30

    Abstract: A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the design variables, from a distribution of the values of the characteristic for that set of values of the design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the design variables.

    Model for calculating a stochastic variation in an arbitrary pattern
    10.
    发明授权
    Model for calculating a stochastic variation in an arbitrary pattern 有权

    公开(公告)号：US10545411B2

    公开(公告)日：2020-01-28

    申请号：US15116486

    申请日：2015-02-04

    Applicant: ASML Netherlands B.V.

    Inventor： Steven George Hansen

    IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20 ,  G06F7/20

    Abstract: A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the one or more design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the one or more design variables, from a distribution of the values of the characteristic for that set of values of the one or more design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the one or more design variables.

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