摘要:
A programmable circuit apparatus having a programmable circuit and an input/output circuit with a first terminal is provided. The programmable circuit apparatus includes a programming circuit, with a bus junction, for programming the programmable circuit. The programmable circuit apparatus further includes an isolation circuit having an isolation input, coupled to the first terminal, and an isolation output, coupled to the bus junction of the programming circuit. The isolation circuit further has an isolation control gate which can receive a control signal and in response to that signal, the control gate controllably couples the isolation input to the isolation output. The programmable circuit apparatus also includes an apparatus for testing the routing, the programming circuitry, and the programmable circuit with a minimal impact on the performance of the programmable circuit. The programmable circuit apparatus also has the ability to program three or more antifuses or other programmable elements simultaneously.
摘要:
According to one embodiment, a method for programming a programmable logic device (PLD) may include reading configuration data from a memory device to program a first portion of a PLD to function as a data decompression circuit (304, 308). Compressed configuration data may then be read and decompressed by the first portion and used to program a second portion (310, 312, 315) with a user determined function. A first portion may then be reprogrammed with a user determined function (320, 324).
摘要:
A voltage source is configured to produce a desired voltage and the desired voltage is applied to a programmable cell coupled to the voltage source. Configuration may be accomplished by loading a register with a programmed voltage value which may be received as a serial data stream through a test access port coupled to the register. For one embodiment, the voltage source may be coupled to a gate of the programmable cell, thus allowing testing of margin voltages of the programmable cell. In a further embodiment, the voltage source may be coupled to a drain of the programmable cell through a load line circuit, thus providing a programmed voltage for the programmable cell. In general then, the programmable voltage source is configurable to provide a voltage to the programmable cell in accordance with a programmed voltage value loaded into the programmable voltage source. The present invention may be embodied in a programmable device such as a PLD a CPLD or an FPGA and provides easily adjustable verify and/or program voltages, configurable through use of the programmable register, to test the operation of the programmable cell. The higher the bit count of the register, the more precise a verify and/or program voltage that may be provided.
摘要:
The burst mode memory architecture using interleaved memory arrays provides even and odd EPROM arrays with data having even addresses stored in the even array and data having odd addresses stored in the odd array. A control circuit receives an initial address from a memory system controller and then accesses all data from the even and odd arrays within a burst address space containing the initial address. A pair of out-of-phase counters generate even and odd addresses, respectively, for accessing the even and odd arrays. Each counter increments addresses sequentially until a burst address space boundary is reached, then the counters wrap around to a beginning of a burst address space to generate any remaining addresses within a burst address space. The burst mode control circuitry is capable of processing a variety of burst sequencing modes. The burst address space size and the burst sequencing mode are selectable. A particular embodiment for generating an aligned sequential burst address sequence is described.
摘要:
The burst mode memory architecture using interleaved memory arrays provides even and odd EPROM arrays with data having even addresses stored in the even array and data having odd addresses stored in the odd array. A control circuit receives an initial address from a memory system controller and then accesses all data from the even and odd arrays within a burst address space containing the initial address. A pair of out-of-phase counters generate even and odd addresses, respectively, for accessing the even and odd arrays. Each counter increments addresses sequentially until a burst address space boundary is reached, then the counters wrap around to a beginning of a burst address space to generate any remaining addresses within a burst address space. The burst mode control circuitry is capable of processing a variety of burst sequencing modes. The burst address space size and the burst sequencing mode are selectable. A particular embodiment for generating an aligned sequential burst address sequence is described.
摘要:
An apparatus comprising a memory device and a programmable logic device. The memory device may be configured to (i) connect to a first bus and a second bus and (ii) operate in one or more modes in response to one or more control signals. The programmable logic device may be configured to generate the control signals.
摘要:
A voltage regulator includes a static regulator that provides a static regulated supply output as a reference input to a dynamic regulator to provide a regulated supply voltage. In one embodiment, multiple dynamic regulators are connected to the static regulated supply output of the static regulator. The one or more dynamic regulators dynamically detect when the regulated supply voltage is loaded below a predetermined reference level, and provide extra current in response to prevent the regulated supply voltage from drooping. Since the static regulator is capable of handling large average currents, the dynamic regulator circuit can be smaller than a typical dynamic regulator for an equivalent load. Furthermore, since the dynamic regulator provides transient current requirements, the size of the static regulator may be likewise smaller in size than a typical static regulator for an equivalent load.
摘要:
A pseudo-differential sense amplifier with improved common mode noise rejection is disclosed. The sense amplifier is connected to a memory cell via an array path and generates an output signal indicative of the state of the memory cell. The sense amplifier includes an array load device connected via an array node to the array path, a reference load device connected via a reference node to a reference path, a differential stage having a first input connected to the reference node, a second input connected to the array node and an output generating the output signal. The sense amplifier further includes a balancing device, connected to the reference node, for compensating a change in signal, caused by a noise event, at the array node and, thus reducing a delay in the response of the sense amplifier when a transition in the state of the cell occurs.
摘要:
A programmable logic device comprising one or more horizontal routing channels, one or more vertical routing channels, and a logic element. Each logic element may be configured to connect between one of the horizontal routing channels and one of the vertical routing channels. The logic element may comprise a logic block cluster and a memory block.
摘要:
A programmable switch includes at least one or more pass transistors having a control voltage that is greater than the data path reference voltage that is selected by a corresponding pass transistor. The control voltage is provided by a higher voltage power supply than the power supply that provides the data path reference voltage. In one embodiment, the higher voltage supply is a quiet supply that is not loaded with devices that switch during normal operation of the programmable switch such as CMOS devices. In another embodiment, the power supply that provides a voltage to an I/O circuit of the probable switch is the power supply that is utilized to provide the control voltage to the pass transistors. In a particular embodiment, the pass transistors comprise higher voltage tolerant devices than other devices in the programmable device. In a particular embodiment, the higher voltage supply is at least the data path reference voltage plus the threshold voltage of the pass transistors.