-
1.发明授权Semiconductor nanocrystal complexes comprising a metal coating and methods of making same 失效包含金属涂层的半导体纳米晶体络合物及其制备方法公开(公告)号：US07482059B2
公开(公告)日：2009-01-27
申请号：US11125120
申请日：2005-05-10
CPC分类号： C30B7/00 , B82Y20/00 , B82Y30/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01G21/21 , C01G25/00 , C01P2004/64 , C01P2006/40 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/62 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/75 , C09K11/88 , C09K11/883 , C09K11/892 , C23C18/00 , C23C18/1204 , C23C18/1295 , C30B29/605 , C30B33/00 , Y10S977/773 , Y10S977/774 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/817 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/821 , Y10S977/822 , Y10S977/823 , Y10S977/834 , Y10T428/12528 , Y10T428/12535 , Y10T428/1266 , Y10T428/12785 , Y10T428/2982 , Y10T428/2991
摘要： A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.
摘要翻译： 一种半导体纳米晶体复合物，其包括在半导体纳米晶核之后形成在半导体纳米晶核的外表面上的金属层，以及制备纳米晶体复合物的方法，包括在半导体纳米晶核之后形成半导体纳米晶核上的金属层 。 金属层可以钝化半导体纳米晶核的表面，并保护半导体纳米晶核免受氧化的影响。 还提供了一种半导体纳米晶体复合体，其具有生长在形成在半导体纳米晶核上的金属层上的壳。 在本实施例中，金属层可以防止半导体外壳和半导体纳米晶体芯之间的晶格失配。
-
2.发明授权公开(公告)号：US07399429B2
公开(公告)日：2008-07-15
申请号：US11125129
申请日：2005-05-10
申请人： Wei Liu , Adam Peng , Daniel Landry
发明人： Wei Liu , Adam Peng , Daniel Landry
CPC分类号： C30B7/00 , B82Y20/00 , B82Y30/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01G21/21 , C01G25/00 , C01P2004/64 , C01P2006/40 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/62 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/75 , C09K11/88 , C09K11/883 , C09K11/892 , C23C18/00 , C23C18/1204 , C23C18/1295 , C30B29/605 , C30B33/00 , Y10S977/773 , Y10S977/774 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/817 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/821 , Y10S977/822 , Y10S977/823 , Y10S977/834 , Y10T428/12528 , Y10T428/12535 , Y10T428/1266 , Y10T428/12785 , Y10T428/2982 , Y10T428/2991
摘要： A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
摘要翻译： 一种稳定且具有高发光量子产率的半导体纳米晶体复合物。 半导体纳米晶体复合体具有III-V族半导体纳米晶体材料的半导体纳米晶体核。 还提供了制备半导体纳米晶体复合物的方法。 该方法包括合成III-V族半导体纳米晶体材料的半导体纳米晶体核心，并在半导体纳米晶体核心合成后在半导体纳米晶体核心上形成金属层。
-
3.发明申请公开(公告)号：US20060001119A1
公开(公告)日：2006-01-05
申请号：US11125129
申请日：2005-05-10
申请人： Wei Liu , Adam Peng , Daniel Landry
发明人： Wei Liu , Adam Peng , Daniel Landry
CPC分类号： C30B7/00 , B82Y20/00 , B82Y30/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01G21/21 , C01G25/00 , C01P2004/64 , C01P2006/40 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/62 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/75 , C09K11/88 , C09K11/883 , C09K11/892 , C23C18/00 , C23C18/1204 , C23C18/1295 , C30B29/605 , C30B33/00 , Y10S977/773 , Y10S977/774 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/817 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/821 , Y10S977/822 , Y10S977/823 , Y10S977/834 , Y10T428/12528 , Y10T428/12535 , Y10T428/1266 , Y10T428/12785 , Y10T428/2982 , Y10T428/2991
摘要： A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
摘要翻译： 一种稳定且具有高发光量子产率的半导体纳米晶体复合物。 半导体纳米晶体复合体具有III-V族半导体纳米晶体材料的半导体纳米晶体核。 还提供了制备半导体纳米晶体复合物的方法。 该方法包括合成III-V族半导体纳米晶体材料的半导体纳米晶体核心，并在半导体纳米晶体核心合成后在半导体纳米晶体核心上形成金属层。
-
公开(公告)号：US20060014040A1
公开(公告)日：2006-01-19
申请号：US11125120
申请日：2005-05-10
CPC分类号： C30B7/00 , B82Y20/00 , B82Y30/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01G21/21 , C01G25/00 , C01P2004/64 , C01P2006/40 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/62 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/75 , C09K11/88 , C09K11/883 , C09K11/892 , C23C18/00 , C23C18/1204 , C23C18/1295 , C30B29/605 , C30B33/00 , Y10S977/773 , Y10S977/774 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/817 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/821 , Y10S977/822 , Y10S977/823 , Y10S977/834 , Y10T428/12528 , Y10T428/12535 , Y10T428/1266 , Y10T428/12785 , Y10T428/2982 , Y10T428/2991
摘要： A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.
摘要翻译： 一种半导体纳米晶体复合物，其包括在半导体纳米晶核之后形成在半导体纳米晶核的外表面上的金属层，以及制备纳米晶体复合物的方法，包括在半导体纳米晶核之后形成半导体纳米晶核上的金属层 。 金属层可以钝化半导体纳米晶核的表面，并保护半导体纳米晶核免受氧化的影响。 还提供了一种半导体纳米晶体复合体，其具有生长在形成在半导体纳米晶核上的金属层上的壳。 在本实施例中，金属层可以防止半导体外壳和半导体纳米晶体芯之间的晶格失配。
-
公开(公告)号：US11866156B1
公开(公告)日：2024-01-09
申请号：US17531766
申请日：2021-11-21
申请人： Wei Liu
发明人： Wei Liu
CPC分类号： B64C23/065 , B64C21/10
摘要： This invention is an apparatus for vortex generation by combining the function of means for vortex generation with the functions of the leading-edge aerodynamic surface, the airfoil, and/or the trailing-edge aerodynamic surface.
-
公开(公告)号：US11686448B1
公开(公告)日：2023-06-27
申请号：US17699103
申请日：2022-03-19
申请人： Wei Liu
发明人： Wei Liu
IPC分类号： B60Q1/00 , F21S41/683 , F21S41/32 , F21S41/43 , F21S41/25 , F21W102/135
CPC分类号： F21S41/683 , F21S41/25 , F21S41/32 , F21S41/43 , F21W2102/135
摘要： This invention is a projector headlight that, while offering dual beam patterns, boasts a 100% utilization of the light emitted from a light source by one of the following methods: (1) employing a reflective cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern, (2) using reversible cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern with no moving part involved, (3) utilizing a selective light-filter cutoff means to selectively reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern without making use of any moving part, (4) using a low-beam light-emitting subassembly and a high-beam light-emitting subassembly that are separated by partition means to achieve dual beam patterns with no moving part, or (5) adopting a low-beam light-emitting subassembly in low-beam pattern and a high-beam light-emitting subassembly in high-beam pattern without any moving part.
-
-
8.发明授权公开(公告)号：US09588205B2
公开(公告)日：2017-03-07
申请号：US13582800
申请日：2011-03-10
IPC分类号： G01R33/50 , G01R33/56 , G01R33/561
CPC分类号： G01R33/50 , G01R33/5601 , G01R33/5613 , G01R33/5616
摘要： The invention relates to a magnetic resonance imaging method for simultaneous and dynamic determination of a longitudinal relaxation time T1 and a transversal relaxation time T2 of the nuclear spin system of an object, in the context of DCE or DSE MRI. In this respect, the invention makes use of a steady-state gradient echo pulse sequence comprising an EPI readout module.
摘要翻译： 本发明涉及一种用于在DCE或DSE MRI的背景下同时和动态地确定物体的核自旋系统的纵向弛豫时间T1和横向弛豫时间T2的磁共振成像方法。 在这方面，本发明利用包括EPI读出模块的稳态梯度回波脉冲序列。
-
9.发明授权公开(公告)号：US09349561B2
公开(公告)日：2016-05-24
申请号：US13340701
申请日：2011-12-30
申请人： Jinshu Wang , Wei Liu , Fan Yang , Xiang Liu , Hongyi Li , Meiling Zhou , Tieyong Zuo
发明人： Jinshu Wang , Wei Liu , Fan Yang , Xiang Liu , Hongyi Li , Meiling Zhou , Tieyong Zuo
摘要： Impregnated rare earth metal-containing barium-aluminum-scandate cathodes with a rare earth oxide doped tungsten matrix and methods for the fabrication thereof are described. In one aspect, an impregnated rare earth metal-containing barium-aluminum-scandate cathode comprises: a rare earth oxide doped tungsten matrix, and an impregnated active substance. The active substance comprises scandium oxide (Sc2O3), a second rare earth oxide, and barium calcium aluminate, wherein the molar ratio of Ba:Ca:Al is about 4:1:1.
摘要翻译： 描述了具有稀土氧化物掺杂钨基体的含浸稀土金属的钡 - 铝 - 钪酸盐阴极及其制造方法。 一方面，含浸稀土金属的钡 - 铝 - 钪酸盐阴极包括：掺杂稀土氧化物的钨基体和浸渍的活性物质。 活性物质包含氧化钪（Sc 2 O 3），第二稀土氧化物和铝酸钡钙，其中Ba:Ca:Al的摩尔比为约4:1:1。
-
公开(公告)号：US09248430B2
公开(公告)日：2016-02-02
申请号：US13510216
申请日：2010-07-22
申请人： Fuling Huang , Puke Mi , Sihan Wang , Jinhua Qian , Qian Chen , Sheng Xu , Jianzhong Li , Gang Wang , Baojun Zhang , Min Liu , Guizhi Wang , Xuemei Han , Jiabo Qu , Panfeng Lu , Shukun Sun , Xiuhui Wang , Yuxin Gao , Deshun Zhang , Ling Jiang , Buwei Yu , Libo Wang , Yali Wang , Lingting Fan , Peng Wei , Wei Liu , Guiyue Guo
发明人： Fuling Huang , Puke Mi , Sihan Wang , Jinhua Qian , Qian Chen , Sheng Xu , Jianzhong Li , Gang Wang , Baojun Zhang , Min Liu , Guizhi Wang , Xuemei Han , Jiabo Qu , Panfeng Lu , Shukun Sun , Xiuhui Wang , Yuxin Gao , Deshun Zhang , Ling Jiang , Buwei Yu , Libo Wang , Yali Wang , Lingting Fan , Peng Wei , Wei Liu , Guiyue Guo
CPC分类号： B01J21/04 , B01J37/0205 , B01J37/0207 , C07C2/22 , C07C2521/04 , C07C2527/126 , C07C11/02
摘要： A method for synthesis of 1-decene oligomer is provided, wherein 1-decene is polymerized at 80-120° C., 0.8-1.4 MPa in the presence of aluminum trichloride catalyst supported on gamma-alumina and n-hexane solvent where the volume ratio of 1-decene to n-hexane is 3:8-4:1. The catalyst is treated as follows: impregnating gamma-alumina carrier in 0.5-2.0 M of hydrochloric acid, sulfuric acid, nitric acid or mixtures thereof, then vacuum drying at 80-100° C. and calcining at 400-800° C.; dissolving 5-10 g of anhydrous aluminum trichloride in 100 ml of tetrachloromethane, trichloromethane or dichloromethane solvent; adding the obtained solution into 10-20 g of activated alumina carrier and obtaining the catalyst after vacuum drying. The conversion of 1-decene is 50 wt % or more. The oligomer has a kinematic viscosity at 40° C. of 6.0-25 mm2/s and a viscosity index of 160-262.
摘要翻译： 提供1-癸烯低聚物的合成方法，其中1-癸烯在负载在γ-氧化铝和正己烷溶剂上的三氯化铝催化剂存在下，在80-120℃，0.8-1.4MPa下聚合，其中体积 1-癸烯与正己烷的比例为3：8-4：1。 催化剂的处理如下：将γ-氧化铝载体浸入0.5-2.0M盐酸，硫酸，硝酸或其混合物中，然后在80-100℃真空干燥并在400-800℃下煅烧。 将5-10g无水三氯化铝溶于100ml四氯甲烷，三氯甲烷或二氯甲烷溶剂中; 将得到的溶液加入10-20g活性氧化铝载体中，真空干燥后得到催化剂。 1-癸烯的转化率为50重量％以上。 低聚物在40℃下的运动粘度为6.0-25mm 2 / s，粘度指数为160-262。
-
-
-
-
-
-
-
-
-
搜索结果
648 条记录 (耗时 0.033 秒)
