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公开(公告)号：US10662550B2
公开(公告)日：2020-05-26
申请号：US15801759
申请日：2017-11-02
发明人： Hongjun Zeng , Nicolaie A. Moldovan
摘要： A method for forming diamond nanostructures with large specific area can include forming porous diamond nanostructures by means of selectively etching sp2-bonded carbon and partially removing sp3-bonded carbon in nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD® diamond). The diamond nanostructures achieved from the disclosed method can include a long shaft surrounded by a school of barbs. The nanostructure can provide a significantly larger surface area than diamond without such a nanostructure and its fabrication provides relative ease of manufacture compared to traditional techniques.
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公开(公告)号：US20180119308A1
公开(公告)日：2018-05-03
申请号：US15801759
申请日：2017-11-02
发明人： Hongjun Zeng , Nicolaie A. Moldovan
CPC分类号： C30B29/04 , C01B32/26 , C01P2002/30 , C01P2006/12
摘要： A method for forming diamond nanostructures with large specific area can include forming porous diamond nanostructures by means of selectively etching sp2-bonded carbon and partially removing sp3-bonded carbon in nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD® diamond). The diamond nanostructures achieved from the disclosed method can include a long shaft surrounded by a school of barbs. The nanostructure can provide a significantly larger surface area than diamond without such a nanostructure and its fabrication provides relative ease of manufacture compared to traditional techniques.
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3.发明申请METHOD OF FABRICATION, DEVICE STRUCTURE AND SUBMOUNT COMPRISING DIAMOND ON METAL SUBSTRATE FOR THERMAL DISSIPATION 审中-公开金属基材制造方法，装置结构和包含金刚石的基材用于热释放公开(公告)号：US20150140740A1
公开(公告)日：2015-05-21
申请号：US14570938
申请日：2014-12-15
CPC分类号： C09K5/14 , B32B37/26 , B32B2037/246 , B32B2037/268 , B32B2309/105 , B32B2311/00 , B32B2313/04 , C01B32/28 , C23C16/01 , C23C16/0281 , C23C16/042 , C23C16/27 , C25D1/00 , C25D1/04 , C25D1/08 , C25D3/38 , C25D3/46 , C25D3/58 , C25D3/64 , C25D5/10 , C25D5/48 , H01L21/4878 , H01L21/4882 , H01L23/142 , H01L23/3732 , H01L24/81 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/0132 , H01L2924/12042 , H01L2924/15747 , Y10T428/24355 , Y10T428/24942 , Y10T428/24975 , Y10T428/31678 , H01L2924/00
摘要： A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a specific surface roughness. Following deposition of the diamond layer, an adhesion layer, e.g. comprising a refractory metal, such as tantalum, and at least one layer of HTC metal is provided. The HTC metal substrate is preferably copper or silver, and may be provided by electroforming metal onto a thin sputtered base layer, and optionally bonding another metal layer. The electrically non-conductive diamond layer has a smooth exposed surface, preferably ≦10 nm RMS, suitable for patterning of contact metallization and/or bonding to a semiconductor device. Methods are also disclosed for patterning the diamond on metal substrate to facilitate dicing.
摘要翻译： 公开了一种在HTC金属基底上包含高导热性（HTC）金刚石的制造方法，器件结构和底座，用于散热。 金刚石层的表面粗糙度通过在具有特定表面粗糙度的牺牲衬底（例如抛光硅晶片）上沉积金刚石来控制。 在金刚石层沉积之后，粘附层例如 包括诸如钽的难熔金属，并且提供至少一层HTC金属。 HTC金属基底优选为铜或银，并且可以通过电铸金属提供到薄的溅射基底层上，并且可选地粘合另一金属层。 非导电金刚石层具有平滑的暴露表面，优选地为10nm RMS，适于图案化与半导体器件的接触金属化和/或结合。 还公开了用于在金属基底上图案化金刚石以便于切割的方法。
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