公开(公告)号：US20130299361A1

公开(公告)日：2013-11-14

申请号：US13890050

申请日：2013-05-08

Applicant: Advanced Diamond Technologies, Inc.

Inventor： Ian Wylie ,  John A. Carlisle ,  Prabhu Arumugam

IPC: C02F1/461

CPC classification number: C02F1/461 ,  C02F1/4672 ,  C02F1/722 ,  C02F2001/46147 ,  C02F2101/32 ,  C02F2101/345 ,  Y02W10/37

Abstract: Disclosed is a system and method for treatment of wastewater to destroy organic contaminants using an electrochemical advanced oxidation process. In particular, the method comprises a multistep process, comprising a) generating a concentrated oxidant solution comprising a peroxy oxidant species, such as persulfate or hydrogen peroxide; b) mixing wastewater comprising organic contaminants with the concentrated oxidant solution to provide a mixture comprising wastewater and diluted oxidant, the wastewater and concentrated oxidant solution being mixed in a prescribed ratio to provide a desired concentration ratio of oxidant species to contaminants; and c) in an electrochemical cell comprising a diamond anode, electrolyzing the mixture of wastewater and diluted oxidant, comprising electrochemically activating the peroxy oxidant species for oxidation and destruction of the contaminants. Fast and effective destruction of organic contaminants such as phenol, napthenic acid and other toxic or refractory contaminants is demonstrated at low cost and with reduced usage of added salt.

Abstract translation: 公开了一种使用电化学高级氧化法处理废水以破坏有机污染物的系统和方法。 特别地，该方法包括多步法，其包括a）产生包含过氧化物物质如过硫酸盐或过氧化氢的浓缩氧化剂溶液; b）将包含有机污染物的废水与浓缩氧化剂溶液混合以提供包含废水和稀释氧化剂的混合物，将废水和浓缩氧化剂溶液以规定的比例混合以提供氧化剂物质与污染物的所需浓度比; 和c）在包含金刚石阳极的电化学电池中，电解废水和稀释氧化剂的混合物，包括电化学活化过氧化物物质以氧化和破坏污染物。 有机污染物如苯酚，环烷酸和其他有毒或难溶性污染物的快速和有效的破坏以低成本和减少的加入盐的用量被证明。

公开(公告)号：US20130213823A1

公开(公告)日：2013-08-22

申请号：US13775015

申请日：2013-02-22

Applicant: Advanced Diamond Technologies, Inc.

Inventor： Prabhu U. Arumugam ,  Shabnam Siddiqui ,  John A. Carlisle

IPC: G01N27/327

CPC classification number: G01N27/3278

Abstract: A diamond electrode and a diamond microelectrode array for biosensors and electroanalytical applications, such as electrochemical impedance spectroscopy (EIS), are disclosed. The electrode comprises a layer of ultra-smooth conductive nanocrystalline diamond (NCD) having a resistivity of >0.05 Ωcm and a surface roughness of

Abstract translation: 公开了用于生物传感器和电分析应用的金刚石电极和金刚石微电极阵列，例如电化学阻抗谱（EIS）。 该电极包括具有> 0.05欧姆卡姆的电阻率和<20纳米Ra的表面粗糙度的超平滑导电纳米晶金刚石（NCD）的层。 优选地，金刚石层包括平均晶粒尺寸<10nm，表面粗糙度<10nm Ra的硼或氮掺杂的超微晶金刚石（UNCD）。 可以将其图案化以限定具有多个可单独寻址的电极的微电极阵列，每个电极具有在100nm至100μm范围内的直径。 每个微电极的表面在生物功能化之前是氢终止的，即用感测分子修饰以检测特定的生物或化学靶，并用阻断剂涂覆以减少非特异性结合。 这些金刚石电极显示出灵敏度，选择性和信号再现性的​​显着增加。 用于使用EIS检测大肠杆菌K12。

公开(公告)号：US20160280567A1

公开(公告)日：2016-09-29

申请号：US14694586

申请日：2015-04-23

Applicant: Advanced Diamond Technologies, Inc.

Inventor： Ian W. Wylie ,  Prabhu U. Arumugam ,  Hongjun Zeng ,  John A. Carlisle

IPC: C02F1/467 ,  C02F1/00 ,  C25B11/04 ,  C25B15/02 ,  C25B1/26 ,  C25B1/28 ,  C25B11/03 ,  C25B11/12 ,  C25B15/08

CPC classification number: C02F1/4674 ,  C02F1/008 ,  C02F1/4672 ,  C02F2001/46119 ,  C02F2001/46147 ,  C02F2001/46157 ,  C02F2101/30 ,  C02F2103/08 ,  C02F2103/34 ,  C02F2201/4611 ,  C02F2201/4613 ,  C02F2201/4614 ,  C02F2201/46145 ,  C02F2201/4618 ,  C02F2201/46185 ,  C02F2209/02 ,  C02F2209/40 ,  C02F2303/04 ,  C25B1/13 ,  C25B1/26 ,  C25B1/285 ,  C25B1/30 ,  C25B11/035 ,  C25B11/04 ,  C25B11/12 ,  C25B15/02 ,  C25B15/08 ,  Y02W10/37

Abstract: An electrochemical system and method are disclosed for On Site Generation (OSG) of oxidants, such as free available chlorine, mixed oxidants and persulfate. Operation at high current density, using at least a diamond anode, provides for higher current efficiency, extended lifetime operation, and improved cost efficiency. High current density operation, in either a single pass or recycle mode, provides for rapid generation of oxidants, with high current efficiency, which potentially allows for more compact systems. Beneficially, operation in reverse polarity for a short cleaning cycle manages scaling, provides for improved efficiency and electrode lifetime and allows for use of impure feedstocks without requiring water softeners. Systems have application for generation of chlorine or other oxidants, including mixed oxidants providing high disinfection rate per unit of oxidant, e.g. for water treatment to remove microorganisms or for degradation of organics in industrial waste water.

Abstract translation: 公开了用于氧化剂的现场生成（OSG）的电化学系统和方法，例如游离的可用氯，混合氧化剂和过硫酸盐。 使用至少金刚石阳极的高电流密度的操作提供更高的电流效率，延长的寿命运行和提高的成本效率。 在单通或循环模式下的高电流密度操作提供快速产生氧化剂，具有高电流效率，这可能允许更紧凑的系统。 有利的是，在短的清洁循环中以相反的极性操作来管理结垢，提供改善的效率和电极寿命，并允许使用不纯的原料而不需要软水剂。 系统具有用于产生氯或其它氧化剂的应用，包括提供每单位氧化剂的高消毒速率的混合氧化剂。 用于水处理以除去工业废水中的微生物或有机物的降解。

公开(公告)号：US20150140740A1

公开(公告)日：2015-05-21

申请号：US14570938

申请日：2014-12-15

Applicant: Advanced Diamond Technologies, Inc.

Inventor： Nicolaie A. Moldovan ,  John A. Carlisle ,  Hongjun Zeng

IPC: C09K5/14 ,  H01L21/48 ,  H01L23/373 ,  H01L23/00 ,  C01B31/06 ,  C25D1/00

CPC classification number: C09K5/14 ,  B32B37/26 ,  B32B2037/246 ,  B32B2037/268 ,  B32B2309/105 ,  B32B2311/00 ,  B32B2313/04 ,  C01B32/28 ,  C23C16/01 ,  C23C16/0281 ,  C23C16/042 ,  C23C16/27 ,  C25D1/00 ,  C25D1/04 ,  C25D1/08 ,  C25D3/38 ,  C25D3/46 ,  C25D3/58 ,  C25D3/64 ,  C25D5/10 ,  C25D5/48 ,  H01L21/4878 ,  H01L21/4882 ,  H01L23/142 ,  H01L23/3732 ,  H01L24/81 ,  H01L2924/0002 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/12042 ,  H01L2924/15747 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a specific surface roughness. Following deposition of the diamond layer, an adhesion layer, e.g. comprising a refractory metal, such as tantalum, and at least one layer of HTC metal is provided. The HTC metal substrate is preferably copper or silver, and may be provided by electroforming metal onto a thin sputtered base layer, and optionally bonding another metal layer. The electrically non-conductive diamond layer has a smooth exposed surface, preferably ≦10 nm RMS, suitable for patterning of contact metallization and/or bonding to a semiconductor device. Methods are also disclosed for patterning the diamond on metal substrate to facilitate dicing.

Abstract translation: 公开了一种在HTC金属基底上包含高导热性（HTC）金刚石的制造方法，器件结构和底座，用于散热。 金刚石层的表面粗糙度通过在具有特定表面粗糙度的牺牲衬底（例如抛光硅晶片）上沉积金刚石来控制。 在金刚石层沉积之后，粘附层例如 包括诸如钽的难熔金属，并且提供至少一层HTC金属。 HTC金属基底优选为铜或银，并且可以通过电铸金属提供到薄的溅射基底层上，并且可选地粘合另一金属层。 非导电金刚石层具有平滑的暴露表面，优选地为10nm RMS，适于图案化与半导体器件的接触金属化和/或结合。 还公开了用于在金属基底上图案化金刚石以便于切割的方法。