公开(公告)号：US20130324390A1

公开(公告)日：2013-12-05

申请号：US13960412

申请日：2013-08-06

申请人： Advanced Technology Materials, Inc.

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01L27/115

CPC分类号： H01L21/02197 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07C49/92 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中相应的电容器面积（即横向缩放）在约104至约10-2mum2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US20150162213A1

公开(公告)日：2015-06-11

申请号：US14400456

申请日：2013-05-10

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： Tianniu Chen ,  Steven M. Bilodeau ,  Emanuel I. Cooper ,  Li-Min Chen ,  Jeffrey A. Barnes ,  Mark Biscotto ,  Karl E. Boggs ,  Rekha Rajaram

IPC分类号： H01L21/3213 ,  C23F1/30

CPC分类号： H01L21/32134 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28518

摘要： Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.

摘要翻译： 用于从其上具有相同材料的微电子器件实质上有效地去除NiPt（1-25％）材料的组合物和方法。 组合物基本上与存在于微电子器件上的其它材料（例如栅极金属材料）相容。

公开(公告)号：US20140020419A1

公开(公告)日：2014-01-23

申请号：US14035834

申请日：2013-09-24

申请人： Advanced Technology Materials, Inc.

发明人： J. Donald Carruthers ,  Karl Boggs ,  Luping Wang ,  Shaun M. Wilson ,  Jose I. Arno ,  Paul J. Marganski ,  Steven M. Bilodeau ,  Peng Zou ,  Brian Bobita ,  Joseph D. Sweeney

IPC分类号： B01J20/26 ,  F25B27/00 ,  F25B35/04 ,  B01J20/28 ,  F25B17/08

CPC分类号： B01J20/26 ,  B01J20/20 ,  B01J20/28054 ,  B01J20/28092 ,  B01J20/30 ,  B01J20/305 ,  B01J20/3078 ,  B01J2220/445 ,  C09K5/047 ,  F25B17/08 ,  F25B27/007 ,  F25B35/04 ,  F25B37/00 ,  F25B2500/01

摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

摘要翻译： 描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。 这种吸附结构在吸附剂型制冷系统中有用。 还描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触以形成 一个结构。 该结构被热解以形成多孔吸附剂材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第 第二个地区。