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    FOLDED LINER FOR USE WITH AN OVERPACK AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    FOLDED LINER FOR USE WITH AN OVERPACK AND METHODS OF MANUFACTURING THE SAME 有权
    使用过折叠的折叠衬垫及其制造方法

    公开(公告)号：US20150321820A1

    公开(公告)日：2015-11-12

    申请号：US14712583

    申请日：2015-05-14

    Applicant: Advanced Technology Materials, Inc.

    Inventor： Amy KOLAND ,  Richard CHISM

    IPC: B65D77/06 ,  B65D25/16

    CPC classification number: B65D77/06 ,  B31B2105/00 ,  B31B2120/404 ,  B65B55/04 ,  B65D25/16 ,  B65D77/065

    Abstract: A method for folding a liner for packaging and/or insertion into an overpack. The method may include providing a liner comprising a substantially tubular body portion and a closed top and bottom, and a fitment formed in or affixed to the top of the liner, forming a gusset in the bottom panel of the liner, forming a gusset in the body portion of the liner, and fan-folding the liner. In some embodiments, the top of the liner may be a substantially circular top panel and the bottom of the liner may be a substantially circular bottom panel, with the top panel being attached to one end of the tubular body portion and the bottom panel being attached to an opposite end of the tubular body portion. In other embodiments, the liner may be a flexible, blow molded liner, thereby having no weld seams.

    Abstract translation: 一种用于折叠用于包装和/或插入到外包装中的衬垫的方法。 该方法可以包括提供包括基本上管状的主体部分和封闭的顶部和底部的衬里，以及形成在衬垫的顶部或固定到衬套的顶部的配件，在衬垫的底板中形成角撑板，在衬垫的底板中形成角撑板 衬垫的主体部分，以及风扇折叠衬垫。 在一些实施例中，衬垫的顶部可以是基本上圆形的顶板，并且衬垫的底部可以是基本上圆形的底板，顶板附接到管状主体部分的一端，并且底板被附接 到管状主体部分的相对端。 在其它实施例中，衬套可以是柔性的，吹塑成型的衬套，从而没有焊缝。

    Low temperature GST process
    6.
    发明授权
    Low temperature GST process 有权
    低温GST工艺

    公开(公告)号：US09070875B2

    公开(公告)日：2015-06-30

    申请号：US14104984

    申请日：2013-12-12

    Applicant: Advanced Technology Materials, Inc.

    Inventor： Jun-Fei Zheng

    IPC: H01L21/20 ,  H01L45/00 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455

    CPC classification number: H01L45/144 ,  C23C16/305 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/45574 ,  H01L45/06 ,  H01L45/1616

    Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

    Abstract translation: 在衬底的表面上形成保形相变材料膜以产生存储器件晶片的沉积工艺包括将衬底提供到沉积系统的腔室; 提供激活区域; 将一种或多种前体引入到所述基板的上游的腔室中; 任选地在基底上游引入一种或多种共反应物; 活化一种或多种前体; 加热基板; 以及通过化学气相沉积从所述一种或多种前体将所述相变材料膜沉积在所述衬底上。 沉积的相变材料膜包括GexSbyTezAm，其中A是选自N，C，In，Sn和Se的掺杂剂。 在一个实施方案中，进行该方法以形成掺杂有碳和氮的GST膜，以赋予膜有利的膜生长和性能。

    Method and apparatus to help promote contact of gas with vaporized material
    7.
    发明授权
    Method and apparatus to help promote contact of gas with vaporized material 有权
    有助于促进气体与气化材料接触的方法和装置

    公开(公告)号：US09004462B2

    公开(公告)日：2015-04-14

    申请号：US13862412

    申请日：2013-04-13

    Applicant: Advanced Technology Materials, Inc.

    Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi K. Laxman

    IPC: B01F3/04 ,  F17C3/00 ,  C23C16/448

    CPC classification number: C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

    Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

    Abstract translation: 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的安瓿。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

    ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS
    8.
    发明申请
    ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS 有权
    替代植物材料和混合物以最小化植入物中的磷酸酶

    公开(公告)号：US20150037511A1

    公开(公告)日：2015-02-05

    申请号：US14378652

    申请日：2013-02-14

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

    Inventor： Richard S. Ray

    IPC: H01J37/317 ,  C23C14/54 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  C23C14/06

    CPC classification number: H01J37/3171 ,  C23C14/0694 ,  C23C14/48 ,  C23C14/52 ,  C23C14/54 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

    Abstract: Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.

    Abstract translation: 代替磷组分作为磷掺杂剂源组合物利用磷氟化物的系统和方法，以减少离子注入系统中不想要的磷沉积物的积聚。 氟化磷可以包括PF 3和/或PF 5。 氟化磷和磷化氢可以共同流到离子注入机，或者每种这样的磷掺杂剂源材料可以交替地和顺序地流动到离子注入机，以实现在植入器中磷固体的不希望的累积相对于相对于 相应的处理系统仅使用磷化氢作为磷掺杂剂源材料。

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