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    Power amplifier having transformer
    1.
    发明授权
    Power amplifier having transformer 有权
    功率放大器具有变压器

    公开(公告)号：US08093950B2

    公开(公告)日：2012-01-10

    申请号：US12622034

    申请日：2009-11-19

    申请人： Akihiko Furukawa ,  Tsuyoshi Kawakami ,  Yasuhiro Kagawa ,  Satoshi Yamakawa

    发明人： Akihiko Furukawa ,  Tsuyoshi Kawakami ,  Yasuhiro Kagawa ,  Satoshi Yamakawa

    IPC分类号： H03F3/45

    CPC分类号： H03F3/26 ,  H03F3/211 ,  H03F3/45188 ,  H03F2203/45731

    摘要： A power amplifier amplifying and compositing differential signals and capable of suppressing harmonics is provided. The power amplifier includes first amplifiers amplifying a first input signal and a second input signal, which are differential signals, a first coil receiving the first input signal and the second input signal amplified by the first amplifiers, a second coil magnetically coupled with the first coil and outputting a composite signal of the amplified first input signal and second input signal, a third coil magnetically coupled with the second coil, and a first capacitor coupled between both ends of the third coil, wherein one end of the first capacitor is coupled to a ground node.

    摘要翻译： 提供功率放大和合成差分信号并能够抑制谐波。 功率放大器包括放大作为差分信号的第一输入信号和第二输入信号的第一放大器，接收由第一放大器放大的第一输入信号和第二输入信号的第一线圈，与第一线圈磁耦合的第二线圈 并输出放大的第一输入信号和第二输入信号的复合信号，与第二线圈磁耦合的第三线圈，以及耦合在第三线圈两端之间的第一电容器，其中第一电容器的一端耦合到 接地节点。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130140582A1

    公开(公告)日：2013-06-06

    申请号：US13816511

    申请日：2011-04-15

    申请人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Naruhisa Miura ,  Yasuhiro Kagawa ,  Kenji Hamada ,  Yoshiyuki Nakaki

    发明人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Naruhisa Miura ,  Yasuhiro Kagawa ,  Kenji Hamada ,  Yoshiyuki Nakaki

    IPC分类号： H01L29/12 ,  H01L21/265

    CPC分类号： H01L29/12 ,  H01L21/0465 ,  H01L21/265 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66128 ,  H01L29/66143 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/8611 ,  H01L29/872

    摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. A RESURF layer (101) including a plurality of P-type implantation layers having a relatively low concentration of P-type impurity is formed adjacent to an active region (2). The RESURF layer (101) includes a first RESURF layer (11), a second RESURF layer (12), a third RESURF layer (13), a fourth RESURF layer (14), and a fifth RESURF layer (15) that are arranged sequentially from the P-type base (2) side so as to surround the P-type base (2). The second RESURF layer (12) is configured with small regions (11′) having an implantation amount equal to that of the first RESURF layer (11) and small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) being alternately arranged in multiple. The fourth RESURF layer (14) is configured with small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) and small regions (15′) having an implantation amount equal to that of the fifth RESURF layer (15) being alternately arranged in multiple.

    摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 在活性区域（2）附近形成包括具有相对低浓度的P型杂质的多个P型注入层的RESURF层（101）。 RESURF层（101）包括第一RESURF层（11），第二RESURF层（12），第三RESURF层（13），第四RESURF层（14）和第五RESURF层（15） 从P型基底（2）侧顺序地包围P型基底（2）。 第二RESURF层（12）配置有具有等于第一RESURF层（11）的注入量的小区域（11'）和具有等于第三RESURF层的注入量的小区域（13'） （13）交替布置成多个。 第四RESURF层（14）配置有具有等于第三RESURF层（13）的注入量的小区域（13'）和具有等于第五RESURF层的注入量的小区域（15'） （15）交替排列成多个。

    Power amplifier
    4.
    发明授权
    Power amplifier 有权
    功率放大器

    公开(公告)号：US08314658B2

    公开(公告)日：2012-11-20

    申请号：US12882592

    申请日：2010-09-15

    申请人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Satoshi Yamakawa

    发明人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Satoshi Yamakawa

    IPC分类号： H03F3/68

    CPC分类号： H03F3/45076 ,  H03F3/19 ,  H03F3/211 ,  H03F3/602 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/45731

    摘要： A power amplifier comprises a plurality of primary inductors provided on a substrate in a circular geometry as a whole; a plurality of amplifier pairs; a secondary inductor; and a connection wiring. Each amplifier pair is coupled to two ends of a corresponding primary inductor, and amplifies and output to the corresponding primary inductor a pair of first and second signals given as differential input signals, respectively. The secondary inductor is provided adjacent to the primary inductors in a circular geometry, further combines and outputs signals made by combining first and second signals in each primary inductor. The connection wiring is provided inside the primary inductors on the substrate and electrically couples middle points of respective primary inductors with each other.

    摘要翻译： 功率放大器包括设置在整体上呈圆形几何形状的基板上的多个初级电感器; 多个放大器对; 次级电感; 和连接线。 每个放大器对耦合到相应的初级电感器的两端，并且分别放大并输出到相应的初级电感器作为差分输入信号给出的一对第一和第二信号。 次级电感器以圆形几何形状邻近初级电感器提供，进一步组合并输出通过在每个初级电感器中组合第一和第二信号而产生的信号。 连接布线设置在基板上的主电感器的内部，并且将各个初级电感器的中点彼此电耦合。

    Power amplifier
    7.
    发明授权
    Power amplifier 有权
    功率放大器

    公开(公告)号：US08493152B2

    公开(公告)日：2013-07-23

    申请号：US13621096

    申请日：2012-09-15

    申请人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Satoshi Yamakawa

    发明人： Tsuyoshi Kawakami ,  Akihiko Furukawa ,  Satoshi Yamakawa

    IPC分类号： H03F3/68

    CPC分类号： H03F3/45076 ,  H03F3/19 ,  H03F3/211 ,  H03F3/602 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/45731

    摘要： A power amplifier comprises a plurality of primary inductors provided on a substrate in a circular geometry as a whole; a plurality of amplifier pairs; a secondary inductor; and a connection wiring. Each amplifier pair is coupled to two ends of a corresponding primary inductor, and amplifies and output to the corresponding primary inductor a pair of first and second signals given as differential input signals, respectively. The secondary inductor is provided adjacent to the primary inductors in a circular geometry, further combines and outputs signals made by combining first and second signals in each primary inductor. The connection wiring is provided inside the primary inductors on the substrate and electrically couples middle points of respective primary inductors with each other.

    摘要翻译： 功率放大器包括设置在整体上呈圆形几何形状的基板上的多个初级电感器; 多个放大器对; 次级电感; 和连接线。 每个放大器对耦合到相应的初级电感器的两端，并且分别放大并输出到相应的初级电感器作为差分输入信号给出的一对第一和第二信号。 次级电感器以圆形几何形状邻近初级电感器提供，进一步组合并输出通过在每个初级电感器中组合第一和第二信号而产生的信号。 连接布线设置在基板上的主电感器的内部，并且将各个初级电感器的中点彼此电耦合。

    POWER AMPLIFIER
    9.
    发明申请
    POWER AMPLIFIER 有权
    功率放大器

    公开(公告)号：US20110063028A1

    公开(公告)日：2011-03-17

    申请号：US12882592

    申请日：2010-09-15

    申请人： Tsuyoshi KAWAKAMI ,  Akihiko Furukawa ,  Satoshi Yamakawa

    发明人： Tsuyoshi KAWAKAMI ,  Akihiko Furukawa ,  Satoshi Yamakawa

    IPC分类号： H03F3/45

    CPC分类号： H03F3/45076 ,  H03F3/19 ,  H03F3/211 ,  H03F3/602 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/45731

    摘要： A power amplifier comprises a plurality of primary inductors provided on a substrate in a circular geometry as a whole; a plurality of amplifier pairs; a secondary inductor; and a connection wiring. Each amplifier pair is coupled to two ends of a corresponding primary inductor, and amplifies and output to the corresponding primary inductor a pair of first and second signals given as differential input signals, respectively. The secondary inductor is provided adjacent to the primary inductors in a circular geometry, further combines and outputs signals made by combining first and second signals in each primary inductor. The connection wiring is provided inside the primary inductors on the substrate and electrically couples middle points of respective primary inductors with each other.

    摘要翻译： 功率放大器包括设置在整体上呈圆形几何形状的基板上的多个初级电感器; 多个放大器对; 次级电感; 和连接线。 每个放大器对耦合到相应的初级电感器的两端，并且分别放大并输出到相应的初级电感器作为差分输入信号给出的一对第一和第二信号。 次级电感器以圆形几何形状邻近初级电感器提供，进一步组合并输出通过在每个初级电感器中组合第一和第二信号而产生的信号。 连接布线设置在基板上的主电感器的内部，并且将各个初级电感器的中点彼此电耦合。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
    10.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20140001472A1

    公开(公告)日：2014-01-02

    申请号：US13995993

    申请日：2011-05-18

    申请人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi

    发明人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi

    IPC分类号： H01L29/16 ,  H01L21/02

    CPC分类号： H01L21/02529 ,  H01L21/8213 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7828 ,  H01L29/872

    摘要： A silicon carbide semiconductor device including an SBD measuring a temperature of a silicon carbide semiconductor element. The silicon carbide semiconductor device includes a MOSFET formed on a silicon carbide epitaxial substrate, and an SBD section measuring a temperature of the MOSFET. The SBD section includes an n-type cathode region in a surface portion of a silicon carbide drift layer; an anode titanium electrode formed on the cathode region, the electrode serving as a Schottky electrode; an n-type cathode contact region of a higher concentration than that of the cathode region, formed in the surface portion of the silicon carbide drift layer to make contact with the cathode region; a cathode ohmic electrode formed on the cathode contact region; and a first p-type well region formed within the silicon carbide drift layer to surround peripheries of the cathode region and the cathode contact region.

    摘要翻译： 一种碳化硅半导体器件，包括测量碳化硅半导体元件的温度的SBD。 碳化硅半导体器件包括形成在碳化硅外延衬底上的MOSFET和测量MOSFET的温度的SBD部分。 SBD部分包括在碳化硅漂移层的表面部分中的n型阴极区域; 在阴极区域形成的阳极钛电极，用作肖特基电极的电极; 形成在碳化硅漂移层的表面部分中以与阴极区接触的n型阴极接触区域，其浓度高于阴极区域; 形成在阴极接触区域上的阴极欧姆电极; 以及形成在碳化硅漂移层内以围绕阴极区域和阴极接触区域的周边的第一p型阱区域。