公开(公告)号：US20120193633A1

公开(公告)日：2012-08-02

申请号：US13499846

申请日：2010-09-21

申请人： Akihiko Kohno ,  Toshio Mizuki ,  Kohichi Tanaka

发明人： Akihiko Kohno ,  Toshio Mizuki ,  Kohichi Tanaka

IPC分类号： H01L29/38 ,  H01L21/205

CPC分类号： H01J37/32192 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: (a) providing a substrate (11a) in a chamber (26); (b) supplying a microwave into the chamber (26) through a dielectric plate (24), of which one surface that faces the chamber is made of alumina, thereby depositing a microcrystalline silicon film (14) with an aluminum concentration of 1.0×1016 atoms/cm3 or less on the substrate (11a) by high-density plasma CVD process; and (c) making a thin-film transistor that uses the microcrystalline silicon film as its active layer. As a result, a semiconductor device including a TFT that uses a microcrystalline silicon film with a mobility of more than 0.5 cm2/Vs as its active layer is obtained.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：（a）在腔室（26）中提供衬底（11a）; （b）通过电介质板（24）将微波提供到腔室（26）中，其中面向腔室的一个表面由氧化铝制成，从而沉积铝浓度为1.0×1016的微晶硅膜（14） 原子/ cm 3以下通过高密度等离子体CVD工艺在基板（11a）上; 和（c）制造使用微晶硅膜作为有源层的薄膜晶体管。 结果，获得包括使用迁移率大于0.5cm2 / Vs的微晶硅膜作为有源层的TFT的半导体器件。

公开(公告)号：US08717340B2

公开(公告)日：2014-05-06

申请号：US13519562

申请日：2010-10-20

申请人： Toshio Mizuki ,  Akihiko Kohno ,  Kohichi Tanaka

发明人： Toshio Mizuki ,  Akihiko Kohno ,  Kohichi Tanaka

IPC分类号： G09G5/00

CPC分类号： H01L29/78678 ,  G02F1/1368 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66765

摘要： Disclosed is a thin film transistor that is provided with a gate insulating film that is inexpensive, and that is less likely to have a low-density microcrystalline silicon layer formed thereon due to plasma induced damage, while suppressing fluctuation of a threshold voltage. In a TFT (100) having the bottom gate structure, since a silicon nitride film (31) having a natural oxide film (32) formed on the surface thereof is used as the gate insulating film (30), the gate insulating film (30) is not only capable of preventing the alkali metal ions contained in a glass substrate (10) from entering the gate insulating film (30), but also capable of suppressing a formation of the low-density microcrystalline silicon layer on the surface of a microcrystalline silicon film (41) on the side in contact with the gate insulating film (30). Since the mobility of the microcrystalline silicon film (41) is increased, the operation speed of the TFT (100) can be improved. Thus, with the simpler configuration, the TFT (100) having the same electrical characteristics as those of the conventional TFTs can be provided.

摘要翻译： 公开了一种薄膜晶体管，其具有便宜的栅极绝缘膜，并且由于等离子体引起的损伤而不太可能具有形成在其上的低密度微晶硅层，同时抑制阈值电压的波动。 在具有底栅结构的TFT（100）中，由于使用在其表面上形成有自然氧化膜（32）的氮化硅膜（31）作为栅极绝缘膜（30），所以栅极绝缘膜 ）不仅能够防止玻璃基板（10）中所含的碱金属离子进入栅极绝缘膜（30），而且能够抑制微晶硅表面上的低密度微晶硅层的形成 在与栅极绝缘膜（30）接触的一侧的硅膜（41）。 由于微晶硅膜（41）的迁移率增加，所以可以提高TFT（100）的工作速度。 因此，通过简单的结构，可以提供具有与常规TFT相同的电特性的TFT（100）。

公开(公告)号：US20130087802A1

公开(公告)日：2013-04-11

申请号：US13805412

申请日：2011-03-25

申请人： Akihiko Kohno ,  Toshio Mizuki ,  Kohichi Tanaka

发明人： Akihiko Kohno ,  Toshio Mizuki ,  Kohichi Tanaka

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/66772 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/78696

摘要： It is an object to increase the mobility of a thin film transistor having an active layer including a microcrystalline semiconductor film. Upon fabricating an inverted staggered type TFT 10, a substrate is vacuum-transferred to a plasma enhanced CVD apparatus such that a surface of a microcrystalline silicon film (active layer 40) exposed by gap etching is not exposed to the air. An insulating film 80 is deposited by the plasma enhanced CVD apparatus so as to completely cover the exposed surface of the microcrystalline silicon film. By this, even if the microcrystalline silicon film is exposed to the air, oxygen cannot be adsorbed on the surface thereof and thus diffusion of oxygen into the microcrystalline silicon film can be suppressed. In addition, since N+ silicon films composing contact layers 50a and 50b directly contact with the microcrystalline silicon film, the contact resistance can be reduced. In this manner, the mobility of the TFT 10 having the active layer 40 including the microcrystalline silicon film can be increased.

摘要翻译： 本发明的目的是增加具有包括微晶半导体膜的有源层的薄膜晶体管的迁移率。 在制造反向交错型TFT10时，将基板真空转印到等离子体增强CVD装置中，使得通过间隙蚀刻而暴露的微晶硅膜（有源层40）的表面不暴露于空气。 通过等离子体增强CVD装置沉积绝缘膜80，以完全覆盖微晶硅膜的暴露表面。 由此，即使微晶硅膜暴露于空气中，也不能在其表面吸附氧，因此可以抑制氧向微晶硅膜的扩散。 此外，由于构成接触层50a和50b的N +硅膜与微晶硅膜直接接触，所以可以降低接触电阻。 以这种方式，可以增加具有包括微晶硅膜的有源层40的TFT 10的迁移率。

公开(公告)号：US20120287094A1

公开(公告)日：2012-11-15

申请号：US13519562

申请日：2010-10-20

申请人： Toshio Mizuki ,  Akihiko Kohno ,  Kohichi Tanaka

发明人： Toshio Mizuki ,  Akihiko Kohno ,  Kohichi Tanaka

IPC分类号： G09G5/00 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78678 ,  G02F1/1368 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66765

摘要： Disclosed is a thin film transistor that is provided with a gate insulating film that is inexpensive, and that is less likely to have a low-density microcrystalline silicon layer formed thereon due to plasma induced damage, while suppressing fluctuation of a threshold voltage. In a TFT (100) having the bottom gate structure, since a silicon nitride film (31) having a natural oxide film (32) formed on the surface thereof is used as the gate insulating film (30), the gate insulating film (30) is not only capable of preventing the alkali metal ions contained in a glass substrate (10) from entering the gate insulating film (30), but also capable of suppressing a formation of the low-density microcrystalline silicon layer on the surface of a microcrystalline silicon film (41) on the side in contact with the gate insulating film (30). Since the mobility of the microcrystalline silicon film (41) is increased, the operation speed of the TFT (100) can be improved. Thus, with the simpler configuration, the TFT (100) having the same electrical characteristics as those of the conventional TFTs can be provided.

摘要翻译： 公开了一种薄膜晶体管，其具有便宜的栅极绝缘膜，并且由于等离子体引起的损伤而不太可能具有形成在其上的低密度微晶硅层，同时抑制阈值电压的波动。 在具有底栅结构的TFT（100）中，由于使用在其表面上形成有自然氧化膜（32）的氮化硅膜（31）作为栅极绝缘膜（30），所以栅极绝缘膜 ）不仅能够防止玻璃基板（10）中所含的碱金属离子进入栅极绝缘膜（30），而且能够抑制微晶硅表面上的低密度微晶硅层的形成 在与栅极绝缘膜（30）接触的一侧的硅膜（41）。 由于微晶硅膜（41）的迁移率增加，所以可以提高TFT（100）的工作速度。 因此，通过简单的结构，可以提供具有与常规TFT相同的电特性的TFT（100）。

公开(公告)号：US06828655B2

公开(公告)日：2004-12-07

申请号：US10294760

申请日：2002-11-15

申请人： Toshio Mizuki ,  Yoshinobu Nakamura

发明人： Toshio Mizuki ,  Yoshinobu Nakamura

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor film comprising a polycrystalline semiconductor film provided on a substrate having an insulating surface. Nearly all crystal orientation angle differences between adjacent crystal grains constituting the polycrystalline semiconductor film are present in the ranges of less than 10° or 58°-62°.

摘要翻译： 一种半导体膜，包括设置在具有绝缘表面的基板上的多晶半导体膜。 构成多晶半导体膜的相邻晶粒之间的几乎所有晶体取向角度差都存在于小于10°或58°-62°的范围内。