公开(公告)号：US20110240224A1

公开(公告)日：2011-10-06

申请号：US13070115

申请日：2011-03-23

申请人： Akihiro YOSHIMURA ,  Tetsuji SATO ,  Masato HORIGUCHI ,  Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

发明人： Akihiro YOSHIMURA ,  Tetsuji SATO ,  Masato HORIGUCHI ,  Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/32568

摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

摘要翻译： 公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。 基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到 所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触， 并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

公开(公告)号：US20110318934A1

公开(公告)日：2011-12-29

申请号：US13167574

申请日：2011-06-23

申请人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

发明人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

IPC分类号： H01L21/3065

CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed

摘要翻译： 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度

公开(公告)号：US20110303643A1

公开(公告)日：2011-12-15

申请号：US13160053

申请日：2011-06-14

申请人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

发明人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

CPC分类号： H01J37/32568 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

摘要： The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded.

摘要翻译： 基板处理装置包括：基座，其与高频电源连接，基板保持在基座上;面对基座的上电极板;以及形成在基座与上电极之间的处理空间PS， 通过使用等离子体对晶片进行等离子体蚀刻处理。 基板处理装置包括覆盖上电极板的表面的电介质板，其表面面向处理空间PS，上电极板被分成面对晶片的中心部分的内电极和面对 晶片的圆周部分，内部电极和外部电极彼此电绝缘，并且第二可变直流电源向内部电极施加正的直流电压，并且外部电极被电接地。

公开(公告)号：US20080014755A1

公开(公告)日：2008-01-17

申请号：US11773232

申请日：2007-07-03

申请人： Nobuhiro WADA ,  Hikoichiro Sasaki

发明人： Nobuhiro WADA ,  Hikoichiro Sasaki

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： In a plasma etching method, a plasma of a processing gas containing CxFy (x, y are integers equal to or greater than 1), a rare gas and O2 by applying a high frequency power to the upper or the lower electrode while the processing gas is being supplied into the processing chamber. Further, an oxide film formed on the substrate is etched through a mask layer while applying a high frequency power for bias to the lower electrode. When a certain etching condition is likely to cause a low etching opening characteristic, a DC voltage is applied to the upper electrode, to thereby obtain a fine opening characteristic.

摘要翻译： 在等离子体蚀刻方法中，含有C x X y（x，y为1以上的整数）的处理气体的等离子体，稀有气体和O 在处理气体被供给到处理室中时，通过施加高频功率到上电极或下电极。 此外，通过掩模层蚀刻形成在基板上的氧化膜，同时向下电极施加用于偏置的高频功率。 当一定的蚀刻条件可能导致较低的蚀刻开口特性时，向上部电极施加直流电压，从而获得微细的开口特性。