公开(公告)号：US08592319B2

公开(公告)日：2013-11-26

申请号：US13167574

申请日：2011-06-23

申请人： Nobuhiro Wada ,  Makoto Kobayashi ,  Hiroshi Tsujimoto ,  Jun Tamura ,  Mamoru Naoi ,  Jun Oyabu

发明人： Nobuhiro Wada ,  Makoto Kobayashi ,  Hiroshi Tsujimoto ,  Jun Tamura ,  Mamoru Naoi ,  Jun Oyabu

IPC分类号： H01L21/3065

CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

摘要翻译： 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度。

公开(公告)号：US08426318B2

公开(公告)日：2013-04-23

申请号：US13171703

申请日：2011-06-29

申请人： Jun Oyabu ,  Takashi Kitazawa

发明人： Jun Oyabu ,  Takashi Kitazawa

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/3255

摘要： Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

摘要翻译： 提供了一种设置电介质的厚度的方法，其通过使用等离子体来蚀刻在基板上的二氧化硅膜时抑制在电极中形成的电介质被消耗。 在包括面对基座的上电极和在上电极中由二氧化硅形成的电介质的基板处理装置中，通过使用等离子体蚀刻在晶片上形成的二氧化硅膜，在等离子体中面向电介质的等离子体的电位 基于施加到基座的偏置功率和室内的A / C比来估计在上部电极中未形成电介质的电介质，并且确定电介质的厚度，使得等离子体的电位 通过将等离子体的估计电位乘以当电介质的容量和围绕电介质的表面周围产生的护套的容量组合时计算的容量降低系数为100eV以下。

公开(公告)号：US20110318934A1

公开(公告)日：2011-12-29

申请号：US13167574

申请日：2011-06-23

申请人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

发明人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

IPC分类号： H01L21/3065

CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed

摘要翻译： 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度

公开(公告)号：US20080236746A1

公开(公告)日：2008-10-02

申请号：US12057827

申请日：2008-03-28

申请人： Jun OYABU ,  Masaaki MIYAGAWA

发明人： Jun OYABU ,  Masaaki MIYAGAWA

IPC分类号： H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32623

摘要： A substrate processing apparatus that can prevent a heat transfer sheet from becoming attached to a focus ring mounting surface of a substrate mounting stage. The substrate mounting stage is disposed in a housing chamber of the substrate processing apparatus, and a substrate is mounted on the substrate mounting stage. A focus ring that surrounds a peripheral portion of the mounted substrate is mounted on the focus ring mounting surface. The heat transfer sheet is interposed between the focus ring and the focus ring mounting surface, and a fluorine coating is formed on the focus ring mounting surface.

摘要翻译： 一种能够防止热转印片附着到基板安装台的聚焦环安装面的基板处理装置。 基板安装台设置在基板处理装置的收容室中，基板安装在基板安装台上。 围绕安装的基板的周边部分的聚焦环安装在聚焦环安装表面上。 传热片介于聚焦环和聚焦环安装面之间，在聚焦环安装面上形成氟涂层。

公开(公告)号：US06508199B1

公开(公告)日：2003-01-21

申请号：US09640393

申请日：2000-08-16

申请人： Jun Oyabu

发明人： Jun Oyabu

IPC分类号： C23C16509

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J2237/022 ,  H01L21/67069

摘要： Inside a processing chamber 102 of an etching apparatus 100, a pair of electrodes, i.e., an upper electrode 118 and a lower electrode 106, are provided. The circumferential edge of the upper electrode 118 is covered by a first ring-shaped body 122, and a cylindrical body 124 is provided around the first ring-shaped body 122. A second ring-shaped body 116 is provided around the lower electrode 106. When the lower electrode 106 is set at the processing position, the second ring-shaped body 116 is positioned inside the cylindrical body 124 to form a plasma space 102a. A gas discharge path 142 is formed between the cylindrical body 124 and the second ring-shaped body 116. The distance between the cylindrical body 124 and the second ring-shaped body 116 is set so as to ensure that the conductance value of the gas inside the gas discharge path 142 is higher than the conductance value of the gas inside the plasma space 102a. The cylindrical body 124 and the first and second ring-shaped bodies 122 and 116 are heated by the plasma. As a result, a plasma processing apparatus capable of inducing plasma to a workpiece uniformly while creating only a small quantity of particles is provided.

摘要翻译： 在蚀刻装置100的处理室102内设置有一对电极，即上电极118和下电极106。 上电极118的圆周边缘被第一环形主体122覆盖，并且圆筒体124设置在第一环形主体122周围。第二环形主体116围绕下电极106设置。 当下电极106设置在处理位置时，第二环形体116位于圆筒体124内部以形成等离子体空间102a。 在圆筒体124和第二环状体116之间形成气体排出路径142.圆筒体124和第二环状体116之间的距离设定为确保内部气体的电导值 气体排出路径142比等离子体空间102a内的气体的电导值高。 圆柱体124和第一和第二环形体122和116被等离子体加热。 结果，提供了能够均匀地引导等离子体到等离子体的等离子体处理装置，同时仅产生少量的颗粒。

公开(公告)号：US20070215284A1

公开(公告)日：2007-09-20

申请号：US11685991

申请日：2007-03-14

申请人： Jun OYABU

发明人： Jun OYABU

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32532

摘要： An electrode assembly, for use in a plasma processing apparatus which generates a plasma by forming a high frequency electric field in a processing chamber accommodating a substrate to be processed, includes a plate shaped member formed of a metal matrix composite material. The plate shaped member has an electric resistance distribution such that an electric resistance in a central portion of the plate shaped member is greater than that in a peripheral portion thereof.

摘要翻译： 一种电极组件，用于通过在容纳待加工基板的处理室中形成高频电场而产生等离子体的等离子体处理装置包括由金属基复合材料形成的板状部件。 板状构件具有电阻分布，使得板状构件的中心部分的电阻大于其周边部分中的电阻。

公开(公告)号：US20110318935A1

公开(公告)日：2011-12-29

申请号：US13171703

申请日：2011-06-29

申请人： Jun OYABU ,  Takashi KITAZAWA

发明人： Jun OYABU ,  Takashi KITAZAWA

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/3255

摘要： Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

摘要翻译： 提供了一种设置电介质的厚度的方法，其通过使用等离子体来蚀刻在基板上的二氧化硅膜时抑制在电极中形成的电介质被消耗。 在包括面对基座的上电极和在上电极中由二氧化硅形成的电介质的基板处理装置中，通过使用等离子体蚀刻在晶片上形成的二氧化硅膜，在等离子体中面向电介质的等离子体的电位 基于施加到基座的偏置功率和室内的A / C比来估计在上部电极中未形成电介质的电介质，并且确定电介质的厚度，使得等离子体的电位 通过将等离子体的估计电位乘以当电介质的容量和围绕电介质的表面周围产生的护套的容量组合时计算的容量降低系数为100eV以下。

公开(公告)号：US20120273135A1

公开(公告)日：2012-11-01

申请号：US13544875

申请日：2012-07-09

申请人： Tsuyoshi HIDA ,  Jun Oyabu

发明人： Tsuyoshi HIDA ,  Jun Oyabu

IPC分类号： H01J7/24 ,  H05H1/24 ,  B44C1/22

CPC分类号： H01J37/3244 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32724

摘要： An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

摘要翻译： 电极单元设置在包括用于通过等离子体处理衬底的处理室的衬底处理设备中。 电极单元包括具有暴露于处理室内部的表面的电极层和设置在暴露表面的相反侧的相对表面，加热层和冷却层，电极层，加热层和冷却层 以处理室的顺序排列。 加热层覆盖电极层的相对表面，而冷却层经由加热层覆盖电极层的相对表面，并且在加热层和冷却层之间插入填充有传热介质的传热层 。

公开(公告)号：US20090223932A1

公开(公告)日：2009-09-10

申请号：US12397708

申请日：2009-03-04

申请人： Tsuyoshi Hida ,  Jun Oyabu

发明人： Tsuyoshi Hida ,  Jun Oyabu

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32724

摘要： An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

摘要翻译： 电极单元设置在包括用于通过等离子体处理衬底的处理室的衬底处理设备中。 电极单元包括具有暴露于处理室内部的表面的电极层和设置在暴露表面的相反侧的相对表面，加热层和冷却层，电极层，加热层和冷却层 以处理室的顺序排列。 加热层覆盖电极层的相对表面，而冷却层经由加热层覆盖电极层的相对表面，并且在加热层和冷却层之间插入填充有传热介质的传热层 。

公开(公告)号：US06673196B1

公开(公告)日：2004-01-06

申请号：US09653457

申请日：2000-08-31

申请人： Jun Oyabu

发明人： Jun Oyabu

IPC分类号： C23C1600

CPC分类号： H01J37/32477 ,  H01J37/32743

摘要： The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.

摘要翻译： 本发明提供一种等离子体处理装置，其包括用于通过利用等离子体对目标物体进行膜沉积处理或蚀刻处理的腔室，以及覆盖室门的开口部分的表面的栅极衬套，用于传送目标物体 进入和离开室，以防止室门受到等离子体的影响。 根据作为阳极/阴极的面积比的阳极/阴极比来确定作为室侧开口部的深度与短边方向的长度的比的栅极纵横比 区域到室内的阴极区域，以防止栅极空间内的异常放电。