公开(公告)号：US08871552B2

公开(公告)日：2014-10-28

申请号：US13808894

申请日：2011-02-09

申请人： Satoshi Tokuda ,  Koichi Tanabe ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Satoshi Tokuda ,  Koichi Tanabe ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L31/18 ,  H01L31/115 ,  H01L21/02 ,  H01L31/0296 ,  H01L27/146

CPC分类号： H01L21/02573 ,  H01L21/02562 ,  H01L21/0262 ,  H01L27/14659 ,  H01L27/14692 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/115 ,  H01L31/1832 ,  Y02E10/50

摘要： Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

摘要翻译： 尽管在通过气相沉积或升华形成由多晶膜或多晶层压膜形成的检测层的第一工艺过程中不再提供Cl（氯），但另外的源（例如，含Cl 气体）在第一个过程的开始或过程中被提供。 因此，作为多晶膜的检测层或CdTe，ZnTe或CdZnTe的多晶层叠膜可以从成膜的第一工序开始到结束的厚度方向均匀地掺杂Cl。 结果，可以实现均匀的结晶粒子和均匀的检测特性。

公开(公告)号：US09985150B2

公开(公告)日：2018-05-29

申请号：US13639318

申请日：2011-02-21

申请人： Toshinori Yoshimuta ,  Satoshi Tokuda ,  Koichi Tanabe ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Toshinori Yoshimuta ,  Satoshi Tokuda ,  Koichi Tanabe ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： H01L31/0236 ,  H01L27/146

CPC分类号： H01L31/0236 ,  H01L27/14636 ,  Y02E10/50

摘要： A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

公开(公告)号：US20130026468A1

公开(公告)日：2013-01-31

申请号：US13639318

申请日：2011-02-21

申请人： Toshinori Yoshimuta ,  Satoshi Tokuda ,  Koichi Tanabe ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Toshinori Yoshimuta ,  Satoshi Tokuda ,  Koichi Tanabe ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： H01L31/0368

CPC分类号： H01L31/0236 ,  H01L27/14636 ,  Y02E10/50

摘要： A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

摘要翻译： 将石墨基板加工成具有1μm至8μm范围内的表面凹凸。 因此，层叠在石墨基板上的半导体膜具有稳定的膜质量，因此可以提高石墨基板和半导体层的粘附性。 当在石墨基板和半导体层之间插入电子阻挡层时，电子阻挡层薄，因此石墨基板的表面凹凸被转印到电子阻挡层上。 因此，电子阻挡层也具有大致在这样的范围内的表面凹凸。 因此，可以制造与将半导体层直接连接到石墨基板的结构几乎相同的效果。

公开(公告)号：US20120140881A1

公开(公告)日：2012-06-07

申请号：US13270258

申请日：2011-10-11

申请人： Akina Yoshimatsu ,  Koichi Tanabe ,  Satoshi Tokuda ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Akina Yoshimatsu ,  Koichi Tanabe ,  Satoshi Tokuda ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： G01T1/24 ,  G01N23/04

CPC分类号： G01T1/247 ,  H04N5/32 ,  H04N5/347 ,  H04N5/378

摘要： A drive controller varies a bias voltage applied from a bias supply to a conversion layer based on the presence or absence of binning, that is, for a case of carrying out binning where switching elements are driven on the basis of a plurality of rows at a time by a gate drive circuit, and for a case of carrying out no binning where the switching elements are driven on a row-by-row basis by the gate drive circuit. Therefore, in the case of a fluoroscopic mode for acquiring images with binning, a lowering of a dynamic range can be suppressed. In the case of a radiographic mode with no binning, spatial resolution can be made high. That is, a high dynamic range and high spatial resolution can be optimized according to modes of operation.

摘要翻译： 驱动控制器基于是否存在分档来改变从偏置电源施加到转换层的偏置电压，即，对于在基于多个行的驱动开关元件的情况下执行合并的情况， 并且对于通过栅极驱动电路逐行驱动开关元件的情况下，不执行合并的情况。 因此，在采用分档获取图像的透视模式的情况下，可以抑制动态范围的降低。 在没有合并的射线照相模式的情况下，可以使空间分辨率高。 也就是说，可以根据操作模式优化高动态范围和高空间分辨率。

公开(公告)号：US20130115731A1

公开(公告)日：2013-05-09

申请号：US13808894

申请日：2011-02-09

申请人： Satoshi Tokuda ,  Koichi Tanabe ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Satoshi Tokuda ,  Koichi Tanabe ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： H01L31/0368

CPC分类号： H01L21/02573 ,  H01L21/02562 ,  H01L21/0262 ,  H01L27/14659 ,  H01L27/14692 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/115 ,  H01L31/1832 ,  Y02E10/50

摘要： Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

摘要翻译： 尽管在通过气相沉积或升华形成由多晶膜或多晶层压膜形成的检测层的第一工艺过程中不再提供Cl（氯），但另外的源（例如，含Cl 气体）在第一个过程的开始或过程中被提供。 因此，作为多晶膜的检测层或CdTe，ZnTe或CdZnTe的多晶层叠膜可以从成膜的第一工序开始到结束的厚度方向均匀地掺杂Cl。 结果，可以实现均匀的结晶粒子和均匀的检测特性。

公开(公告)号：US20140246744A1

公开(公告)日：2014-09-04

申请号：US14009210

申请日：2012-03-19

申请人： Masatomo Kaino ,  Satoshi Tokuda ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

发明人： Masatomo Kaino ,  Satoshi Tokuda ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Akina Yoshimatsu ,  Toshiyuki Sato ,  Shoji Kuwabara

IPC分类号： H01L31/18 ,  H01L31/0272

CPC分类号： H01L31/18 ,  A61B6/4233 ,  H01L27/14676 ,  H01L27/14696 ,  H01L31/0272

摘要： A graphite substrate is accommodated into a chamber where vacuum drawing is performed via a pump. Thereafter, carbon is heated under vacuum, whereby impurities in the carbon are evaporated causing the carbon to be purified. The carbon in the graphite substrate is purified, achieving suppression of the impurities as donor/acceptor elements and also metallic elements in the semiconductor layer of 0.1 ppm or less, the impurities being contained in the carbon in the graphite substrate. As a result, occurrence of leak current or an abnormal leak point enables to be suppressed, and thus abnormal crystal growth in the semiconductor layer enables to be suppressed.

摘要翻译： 将石墨基板容纳在通过泵进行真空拉拔的室中。 此后，在真空下加热碳，由此碳中的杂质被蒸发，使得碳被净化。 纯化石墨基质中的碳，实现作为供体/受体元素的杂质以及半导体层中的金属元素抑制为0.1ppm以下，杂质包含在石墨基板中的碳中。 结果，能够抑制漏电流或异常泄漏点的发生，能够抑制半导体层的异常晶体生长。

公开(公告)号：US08563940B2

公开(公告)日：2013-10-22

申请号：US13262098

申请日：2009-04-03

申请人： Satoshi Tokuda ,  Tamotsu Okamoto ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshinori Yoshimuta ,  Koichi Tanabe

发明人： Satoshi Tokuda ,  Tamotsu Okamoto ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshinori Yoshimuta ,  Koichi Tanabe

IPC分类号： H01L27/146

CPC分类号： G01T1/24 ,  H01L31/115

摘要： According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

摘要翻译： 根据辐射检测器的制造方法，本发明的放射线检测器和射线照相设备采用Cl掺杂的CdZnTe作为转化层，Cl浓度设定为1ppm〜3ppm（重量），Zn浓度设定为1 mol％至5mol％。 这可以形成辐射探测器最佳的转换层。 因此，可以提供放射线检测器制造方法，放射线检测器和射线照相设备，其可以通过适当浓度的Cl掺杂来保护晶粒边界的缺陷水平，并且可以进一步保持对辐射的积分灵敏度，同时减少漏电流， 通过适当浓度的Zn掺杂。

公开(公告)号：US20120093290A1

公开(公告)日：2012-04-19

申请号：US13262098

申请日：2009-04-03

申请人： Satoshi Tokuda ,  Tamotsu Okamoto ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshinori Yoshimuta ,  Koichi Tanabe

发明人： Satoshi Tokuda ,  Tamotsu Okamoto ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Toshinori Yoshimuta ,  Koichi Tanabe

IPC分类号： G01N23/04 ,  H01L31/18 ,  H01L31/0296

CPC分类号： G01T1/24 ,  H01L31/115

摘要： According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

摘要翻译： 根据辐射检测器的制造方法，本发明的放射线检测器和射线照相设备采用Cl掺杂的CdZnTe作为转化层，Cl浓度设定为1ppm〜3ppm（重量），Zn浓度设定为1 mol％至5mol％。 这可以形成辐射探测器最佳的转换层。 因此，可以提供放射线检测器制造方法，放射线检测器和射线照相设备，其可以通过适当浓度的Cl掺杂来保护晶粒边界的缺陷水平，并且可以进一步保持对辐射的积分灵敏度，同时减少漏电流， 通过适当浓度的Zn掺杂。

公开(公告)号：US08405037B2

公开(公告)日：2013-03-26

申请号：US12867229

申请日：2008-02-12

申请人： Satoshi Tokuda ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Tamotsu Okamoto

发明人： Satoshi Tokuda ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Tamotsu Okamoto

IPC分类号： G01T1/20

CPC分类号： H01L27/14659 ,  H01L27/14658 ,  H01L27/14696 ,  H01L31/115 ,  H01L31/1185

摘要： A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.

摘要翻译： 本发明的放射线检测器包括其中保护晶粒缺陷水平的Cl掺杂的CdTe或C​​l掺杂的CdZnTe多晶半导体膜。 这是通过研磨掺杂有Cl的CdTe或C​​dZnTe晶体获得的，并且通过使用其粉末作为源来再次制备多晶半导体膜。 多晶半导体膜中的晶界的缺陷水平也通过再次掺杂用Cl再次制备的多晶半导体膜来保护。 这些特征使得能够制造具有优异的灵敏度和对辐射的响应的辐射检测器。

公开(公告)号：US20100327172A1

公开(公告)日：2010-12-30

申请号：US12867229

申请日：2008-02-12

申请人： Satoshi Tokuda ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Tamotsu Okamoto

发明人： Satoshi Tokuda ,  Hiroyuki Kishihara ,  Masatomo Kaino ,  Tamotsu Okamoto

IPC分类号： G01T1/24 ,  H01L31/18 ,  H01L31/08

CPC分类号： H01L27/14659 ,  H01L27/14658 ,  H01L27/14696 ,  H01L31/115 ,  H01L31/1185

摘要： A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.

摘要翻译： 本发明的放射线检测器包括其中保护晶粒缺陷水平的Cl掺杂的CdTe或C​​l掺杂的CdZnTe多晶半导体膜。 这是通过研磨掺杂有Cl的CdTe或C​​dZnTe晶体获得的，并且通过使用其粉末作为源来再次制备多晶半导体膜。 多晶半导体膜中的晶界的缺陷水平也通过再次掺杂用Cl再次制备的多晶半导体膜来保护。 这些特征使得能够制造具有优异的灵敏度和对辐射的响应的辐射检测器。