公开(公告)号：US20130084693A1

公开(公告)日：2013-04-04

申请号：US13628268

申请日：2012-09-27

申请人： Akinobu KAKIMOTO ,  Atsushi ENDO ,  Takahiro MIYAHARA ,  Shigeru NAKAJIMA ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

发明人： Akinobu KAKIMOTO ,  Atsushi ENDO ,  Takahiro MIYAHARA ,  Shigeru NAKAJIMA ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

摘要： A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

摘要翻译： 在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜的薄膜形成方法包括：通过提供种子进行形成种子膜的第一步骤 将包含氨基硅烷类气体和高级硅烷中的至少任一种的膜原料气体加入到处理容器内; 以及通过向所述处理容器供给硅烷系气体和含杂质气体，进行非晶态的含杂质的硅膜的第二工序。

公开(公告)号：US20130023110A1

公开(公告)日：2013-01-24

申请号：US13552719

申请日：2012-07-19

申请人： Akinobu KAKIMOTO ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

发明人： Akinobu KAKIMOTO ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC分类号： H01L21/20 ,  C23C16/24

CPC分类号： H01L21/02664 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

摘要： A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

摘要翻译： 形成非晶硅膜的方法包括：通过加热基底并向加热的基底供应氨基硅烷基气体，在基底的表面上形成种子层，形成具有种子厚度的非晶硅膜 通过加热基底并将不含氨基的硅烷系气体供给到加热基材的表面上的种子层，并且通过蚀刻形成有层生长厚度的非晶硅膜来降低非晶硅膜的膜厚度 。

公开(公告)号：US20110287629A1

公开(公告)日：2011-11-24

申请号：US13110333

申请日：2011-05-18

申请人： Akinobu KAKIMOTO ,  Satoshi TAKAGI ,  Jyunji ARIGA ,  Norifumi KIMURA ,  Kazuhide HASEBE

发明人： Akinobu KAKIMOTO ,  Satoshi TAKAGI ,  Jyunji ARIGA ,  Norifumi KIMURA ,  Kazuhide HASEBE

IPC分类号： H01L21/285 ,  H01L21/306

CPC分类号： H01L21/76876 ,  C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/76877

摘要： A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.

摘要翻译： 硅膜形成方法包括第一成膜操作，蚀刻操作和第二成膜操作。 在第一成膜操作中，形成第一硅膜以填充待处理物体的凹槽。 在蚀刻操作中，通过蚀刻在第一成膜操作中形成的第一硅膜来加宽槽的开口。 在第二成膜操作中，在蚀刻操作中在开槽加宽的槽上形成第二硅膜以填充凹槽。 因此，在其上设置有沟槽的被处理物体的沟槽上形成硅膜。

公开(公告)号：US20110164346A1

公开(公告)日：2011-07-07

申请号：US12978950

申请日：2010-12-27

申请人： Masayuki TAMURA ,  Satoshi TAKAGI ,  Dan SAKURAI ,  Sanshiro AMAN ,  Yuki KAMADA

发明人： Masayuki TAMURA ,  Satoshi TAKAGI ,  Dan SAKURAI ,  Sanshiro AMAN ,  Yuki KAMADA

IPC分类号： H01G4/06 ,  C04B35/468

CPC分类号： H01G4/1227 ,  C04B35/4682 ,  C04B35/6342 ,  C04B35/638 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3277 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/6562 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/80 ,  C04B2235/96 ,  H01G4/30

摘要： A dielectric ceramic composition comprises a main component composed of at least one selected from BaTiO3, (Ba, Ca)TiO3, (Ba, Sr)TiO3 and (Ba, Ca, Sr)TiO3, an oxide of rare earth element and a composite compound including Ba. 9 to 13 mol of the composite compound in terms of composite compound is included in the dielectric composition. The dielectric ceramic composition includes surface diffusion particles having surface diffusion structure composed of non diffusion phase and diffusion phase including rare earth element. In the surface diffusion particle, when an area of the non diffusion phase is defined as S1, an area of the diffusion phase is defined as S2, S1 and S2 satisfy a relation of S1:S2=20:80 to 30:70 (Note that, except S1=30 and S2=70) , when an average concentration of the rare earth element in the surface diffusion particle is defined as C, S2 and C satisfy a relation of 4.8≦S2×C≦5.8. By the present invention, dielectric ceramic composition which improves reliability with obtaining good specific permittivity and temperature characteristic and electronic component to which the dielectric ceramic composition is applied can be obtained.

摘要翻译： 电介质陶瓷组合物包括由选自BaTiO 3，（Ba，Ca）TiO 3，（Ba，Sr）TiO 3和（Ba，Ca，Sr）TiO 3，稀土元素的氧化物和复合化合物 包括巴。 复合化合物中的9〜13摩尔复合化合物包含在电介质组合物中。 电介质陶瓷组合物包括具有由非扩散相和包含稀土元素的扩散相组成的表面扩散结构的表面扩散粒子。 在表面扩散粒子中，当非扩散相的面积被定义为S1时，扩散相的面积被定义为S2，S1和S2满足S1的关系：S2 = 20：80〜30:70（注 除了S1 = 30和S2 = 70之外），当表面扩散粒子中的稀土元素的平均浓度定义为C时，S2和C满足4.8＆nlE; S2×C＆nlE; 5.8的关系。 通过本发明，可以获得通过获得良好的比介电常数和温度特性提高可靠性的电介质陶瓷组合物以及应用电介质陶瓷组合物的电子部件。

公开(公告)号：US20100281232A1

公开(公告)日：2010-11-04

申请号：US12766194

申请日：2010-04-23

申请人： Satoshi TAKAGI ,  Yasuhiro MATSUI ,  Masao TANAKA ,  Takahiro IKARASHI ,  Akihiko SAOTOME ,  Hiroshi SUMIHIRO ,  Yukinao KENJO

发明人： Satoshi TAKAGI ,  Yasuhiro MATSUI ,  Masao TANAKA ,  Takahiro IKARASHI ,  Akihiko SAOTOME ,  Hiroshi SUMIHIRO ,  Yukinao KENJO

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G06F12/0292

摘要： Disclosed herein is a memory controlling device including: an address converting section configured to convert a logical address included in a request issued from a plurality of clients into a physical address of a memory; a request dividing section configured to divide a converted request converted by the address converting section by a command unit for the memory on a basis of the physical address of the converted request; and an arbitrating section configured to perform arbitration on a basis of the physical address indicated in a divided request output from the request dividing section.

摘要翻译： 这里公开了一种存储器控制装置，包括：地址转换部分，被配置为将从多个客户端发出的请求中包括的逻辑地址转换为存储器的物理地址; 请求分割部，被配置为基于所转换的请求的物理地址，将由地址转换部转换的转换请求除以存储器的命令单元; 以及仲裁部，被配置为基于从所述请求分割部输出的分割请求中指示的物理地址来执行仲裁。