摘要:
The present invention provides a high quality magnetoresistance effect type magnetic head having an increased reproduction output and capable of applying a uniform bias magnetic field to a magnetoresistance effect layer without increasing an impedance. The magnetoresistance effect type magnetic head according to the present invention includes: a magnetic layer 11 magnetized approximately in a vertical direction to a plane 14 opposing to a magnetic recording medium; a non-magnetic insulation layer 12 formed on the magnetic layer 11; and a magnetoresistance effect layer 13 formed on the non-magnetic insulation layer 12 and exhibiting the magnetoresistance effect. In the longitudinal type magnetoresistance effect type magnetic head according to the present, the detection current supplied to a magnetoresistance element is prevented from flowing into a hard magnetic film to lower the head reproduction output.
摘要:
A magneto-resistive effect type magnetic head employing a spin valve film in which the direction of magnetization of a free layer is constant even in the absence of an external magnetic field to assure magnetic stability. The magneto-resistive effect type magnetic head includes a magneto-resistive effect film of a planar substantially rectangular configuration, having its longitudinal direction substantially perpendicular to a magnetic recording medium sliding surface, a first electrode connected to a longitudinal end of the magneto-resistive effect film, a second electrode connected to the other longitudinal end of the magneto-resistive effect film and hard magnetic films arranged on both ends along the width of the magneto-resistive effect film. The magneto-resistive effect film is made up of at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer and an anti-ferromagnetic layer, layered together. The hard magnetic films has an electrical resistance larger than that of the magneto-resistive effect film.
摘要:
A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.
摘要:
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
摘要:
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density.A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.
摘要:
A nitrile resin composition having excellent transparency, antistatic properties and practical physical properties. The composition comprises (A) 80 to 97 wt. % of a nitrile resin which is obtained by graft copolymerization, in the presence of 3 to 30 parts by weight of a rubbery polymer containing at least 50 wt. % of a conjugated diene unit, of 100 parts by weight of a monomer mixture containing an unsaturated nitrile and an alkyl methacrylate, and has, as a matrix component, 65 to 80 wt. % of an unsaturated nitrile unit and 20 to 35 wt. % in total of an alkyl (meth)acrylate unit and a unit of a further monomer copolymerizable with the unsaturated nitrile and alkyl (meth)acrylate; and (B) 3 to 20 wt. % of a polyether ester amide, wherein the ratio of the melt viscosity of the component (A) to that of the component (B) at 210.degree. C. is 0.5 to 5 at a shear rate of 10.sup.2 sec.sup.-1 and 0.5 to 3 at a shear rate of 10.sup.3 sec.sup.-1 and the difference of the refractive index between the matrix component (A) to the component (B) is 0.2 or less.
摘要:
A modified phenolic resin that is an alternate copolymer of at least one phenolic compound selected from phenol, naphthols, and their derivatives and a compound having a divalent connecting group, said modified phenolic resin having a side chain attached to an aromatic ring having a hydroxy group, said side chain being represented by defined formula (1-1). The modified phenolic resin can be used as a hardener for epoxy resins and a cured product thereof has excellent adhesion and flame retardancy without impairing properties of conventional phenolic resins such as gel time, glass transition temperature, moisture absorption, and mechanical properties. The epoxy resin composition can provide excellent adhesion and flame retardancy as hardeners for semiconductor sealing epoxy resins, insulating materials for electrical/electronic components, and laminates (printed circuit boards). A prepreg containing a glass substrate impregnated with the epoxy resin composition, a laminate, and an electronic circuit board are also provided.
摘要:
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.
摘要:
A heat-resistant high-nitrile polymer composition obtained by the graft copolymerization of 100 parts by weight of a monomer mixture comprising 50 to 80% by weight of an unsaturated nitrile monomer, a maleimide monomer, an aromatic vinyl monomer, and a monomer copolymerizable with the foregoing monomers, in the presence of 1 to 40 parts by weight of a conjugated diene-based synthetic rubber containing not less than 50% by weight of a conjugated diene monomer unit, wherein the concentration of residual maleimide monomer in the polymer composition is not greater than 200 ppm by weight. This polymer composition is suitable for use as a molding material for extrusion molding, blow molding, injection molding and the like, and is useful in applications which require gas barrier properties, chemical resistance, non-adsorptive properties and the like, and which require use in automobiles, heat resistance sufficient for heat filling, and safety and hygienic properties.
摘要:
A thin film magnetic head which includes a substrate of magnetic or nonmagnetic material, an upper magnetic film on the substrate, a coil conductor on the substrate, and a lower magnetic film on the substrate, the lower magnetic film having a groove formed therein for receiving the coil conductor therein. In the preferred form of the present invention, the thickness of the lower magnetic film is at least 0.3 times the thickness of the upper magnetic film when the substrate is composed of a magnetic material and at least 0.8 times the thickness of the upper magnetic film when the substrate is composed of a nonmagnetic material.