公开(公告)号：US20100210102A1

公开(公告)日：2010-08-19

申请号：US12758432

申请日：2010-04-12

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller.

Abstract translation: 为了提高半导体器件中的上下互连之间的粘合性，本发明的半导体器件包括形成在基板上并包含下互连的第二介质多层膜; 形成在所述第二电介质多层膜上并具有凹部的第一电介质多层膜; 形成在凹部的内壁上并含有金属M和氧作为主要成分的MOx膜; 形成在MOx膜上并含有M作为主要成分的M膜; 以及形成在M膜上的电导体，以填充凹部，并且包含Cu作为主要成分，其中互连的表面部分在凹部的底部下方直线的氧浓度为1％以下。

公开(公告)号：US20100127404A1

公开(公告)日：2010-05-27

申请号：US12689741

申请日：2010-01-19

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: H01L23/48

CPC classification number: H01L21/31116 ,  H01L21/76831

Abstract: In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound).

Abstract translation: 在制造半导体器件的方法中，多孔膜的绝缘电阻稳定，相邻互连线之间的漏电流提高了信号传播的可靠性。 该方法包括：在半导体衬底上顺序形成多孔膜和图案化抗蚀剂膜; 形成衬底的凹入的暴露表面; 形成覆盖所述凹部的内壁和所述多孔膜的无孔膜; 通过各向异性蚀刻从凹部的底部和非多孔膜选择性地去除无孔膜; 形成覆盖多孔膜和内壁的阻挡金属膜; 并在阻挡金属膜上形成金属膜以填充凹部。 各向异性蚀刻工艺使用混合比为MR，45＆nlE; MR＆nlE; 100的蚀刻气体，其中MR =（（气态“含氮”化合物）+（惰性气体））/（气态“含氟化合物”）。

公开(公告)号：US20120235302A1

公开(公告)日：2012-09-20

申请号：US13398363

申请日：2012-02-16

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/485 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract translation: 半导体制造方法包括：在层间绝缘膜上形成的开口部的底面和侧壁上形成包括第一金属的种子膜和除了开口部之外的位于层间绝缘膜以上的场部，形成抗蚀剂 种子薄膜并用抗蚀剂填充开口部分，去除抗蚀剂的一部分，暴露形成在开口部分的侧壁的上部上的种子膜和场部分，形成包括第二金属的覆盖膜， 电阻率高于第一金属，位于位于开口部分的侧壁的上部和场部分的种子膜上，通过去除抗蚀剂暴露种子膜，并形成包括第一金属的镀膜 在暴露的种子膜上。

公开(公告)号：US20090166074A1

公开(公告)日：2009-07-02

申请号：US12344011

申请日：2008-12-24

Applicant: Akira FURUYA ,  Masahiro MIYAZAKI ,  Hiroshi TAKE ,  Keisuke TAKASUGI

Inventor： Akira FURUYA ,  Masahiro MIYAZAKI ,  Hiroshi TAKE ,  Keisuke TAKASUGI

IPC: H05K1/16

CPC classification number: H01G4/33 ,  H01G4/224 ,  H01G4/228 ,  H01G4/236

Abstract: The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point.

Abstract translation: 本发明提供能够有效地抑制无源元件部的特性劣化的电子部件。 电子部件包括陶瓷基板，基板上的无源元件部分，设置在无源元件部分上方并包括通孔的绝缘体层，安装在绝缘体层的通孔中的引线端子和 电连接到无源元件部分，以及电连接到引线端子的外部连接端子。 绝缘体层包括无源元件部分侧的第一面，与无源元件部分相对的一侧上的第二面以及连接第一面和第二面的第三面，并构成绝缘体层的外周面 外部连接端子与引线端子和绝缘体层的第二面和第三面接触。 在基板的厚度方向的贯通孔的截面中，贯通孔的内表面与引线端子之间的边界线沿着从第三面的区域移开的方向倾斜， 外部连接端子与第一面侧的边界线的端部接触，作为固定点。

公开(公告)号：US20120264288A1

公开(公告)日：2012-10-18

申请号：US13495586

申请日：2012-06-13

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: H01L21/768

CPC classification number: H01L23/485 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

Abstract translation: 凹陷部分中的空隙的产生被抑制。 一种制造半导体器件的方法包括：形成在半导体衬底上的绝缘膜中形成凹部的操作; 在凹部中形成种子膜的操作; 在凹部中形成覆盖金属膜的动作; 选择性地去除覆盖金属膜以将种子膜暴露在凹部的底部上的操作; 以及通过利用暴露在凹部的底部中的种子膜作为种子来进行镀膜的生长以填充凹部的操作。

公开(公告)号：US20120247423A1

公开(公告)日：2012-10-04

申请号：US13423438

申请日：2012-03-19

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: F02D9/08

CPC classification number: F02M1/10 ,  F01N1/084 ,  F01N5/02 ,  Y02T10/16

Abstract: There is provided an automatic choke apparatus for an engine. A bimetal that is coupled to a choke valve of an intake system is provided in the vicinity of an outer wall face of a muffler. The muffler is divided into a first expansion chamber and a second expansion chamber across a partition plate. An exhaust hole that allows the expansion chambers to be communicated with each other is formed at the lower part of the partition plate. An exhaust gas is guided from the upstream first expansion chamber toward the downstream second expansion chamber through the exhaust hole. A bypass hole is formed at an upper part of the partition plate in such a manner that that the expansion chambers are communicated with each other as bypassing the exhaust hole. The bypass hole is open to the vicinity of the outer wall face opposite to the bimetal.

Abstract translation: 提供了一种用于发动机的自动扼流装置。 在消声器的外壁面附近设有与进气系统的阻流阀连接的双金属片。 消声器分隔成隔离隔板的第一膨胀室和第二膨胀室。 在隔板的下部形成有允许膨胀室相互连通的排气孔。 废气通过排气孔从上游第一膨胀室向下游第二膨胀室引导。 在分隔板的上部形成旁通孔，使得膨胀室相互连通，以绕过排气孔。 旁通孔向与双金属片相对的外壁面附近开放。

公开(公告)号：US20110155578A1

公开(公告)日：2011-06-30

申请号：US13044222

申请日：2011-03-09

Applicant: Akira FURUYA ,  Yasuaki TSUCHIYA

Inventor： Akira FURUYA ,  Yasuaki TSUCHIYA

IPC: C25D5/00 ,  C25D7/12

CPC classification number: C25D5/00 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76849 ,  H01L21/76877

Abstract: An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step 101 of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and step 103 of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In step 101, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

Abstract translation: 本发明的目的是可靠地形成镀膜。 顺序进行以下两个步骤：将晶片109的成膜表面连接到阴极电极107的步骤101，使得成膜表面从电镀液103的表面倾斜并将晶片109浸入电镀 溶液103，其在阴极电极107和布置在电镀液103中的Cu阳极电极105之间施加第一电流;步骤103，在将成膜表面浸渍在电镀液103中之后，在阴极 电极107和Cu阳极电极105，通过电解电镀在成膜面上形成金属膜。 在步骤101中，基于液面和成膜面之间的倾斜角来控制第一电流。

公开(公告)号：US20110079909A1

公开(公告)日：2011-04-07

申请号：US12898165

申请日：2010-10-05

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: H01L23/538 ,  H01L21/768

CPC classification number: H01L23/485 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

Abstract translation: 凹陷部分中的空隙的产生被抑制。 一种制造半导体器件的方法包括：形成在半导体衬底上的绝缘膜中形成凹部的操作; 在凹部中形成种子膜的操作; 在凹部中形成覆盖金属膜的动作; 选择性地去除覆盖金属膜以将种子膜暴露在凹部的底部上的操作; 以及通过利用暴露在凹部的底部中的种子膜作为种子来进行镀膜的生长以填充凹部的操作。

公开(公告)号：US20080236885A1

公开(公告)日：2008-10-02

申请号：US12053317

申请日：2008-03-21

Applicant: Toshiyuki YOSHIZAWA ,  Masaomi ISHIKURA ,  Masahiro MIYAZAKI ,  Akira FURUYA ,  Nobuyuki OKUZAWA

Inventor： Toshiyuki YOSHIZAWA ,  Masaomi ISHIKURA ,  Masahiro MIYAZAKI ,  Akira FURUYA ,  Nobuyuki OKUZAWA

IPC: H01L23/28

CPC classification number: H01G4/40 ,  H01F17/0006 ,  H01F27/40 ,  H01G4/224 ,  H01G4/33 ,  H01L27/016

Abstract: A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer.

Abstract translation: 基板上的端子电极体相对于树脂层露出，突出超出树脂层的侧面。 也就是说，端子电极体未被树脂层覆盖。 电子元件被绝缘层覆盖，并且端子电极体和电子元件电连接。 因此，施加到端子电极体的电信号可以被传送到电子元件。 覆盖层覆盖端子电极体和端子电极体与树脂层之间的边界。

公开(公告)号：US20130068196A1

公开(公告)日：2013-03-21

申请号：US13591650

申请日：2012-08-22

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: F01L1/04 ,  F02D9/00

CPC classification number: F02D9/1065 ,  F02D11/04

Abstract: There is the operation device for an engine. An operation device for an engine performs a throttle operation of the engine which is disposed apart from an operation unit operated by an operator. The operation device includes: a link member rotatable with respect to a base in response to an operation of the operation unit; a cam member fixed to the base, and disposed at a distance from the center of rotation of the link member, the distance changing continuously according to the angular position of the cam member around the center of rotation; a cam follower connected to the link member and configured to along the cam member; and a throttle drive member for connecting the cam follower to a throttle operation unit of the engine.

Abstract translation: 有一个发动机的操作装置。 用于发动机的操作装置执行与操作者操作的操作单元分离的发动机的节气门操作。 操作装置包括：响应于操作单元的操作相对于基座旋转的连杆构件; 固定在所述基座上的凸轮构件，并且设置在所述连杆构件的旋转中心的一定距离处，所述距离根据所述凸轮构件围绕所述旋转中心的角度位置而连续变化; 连接到所述连杆构件并沿着所述凸轮构件配置的凸轮从动件; 以及用于将凸轮从动件连接到发动机的节气门操作单元的节气门驱动构件。