摘要:
A multilayer ceramic capacitor with external terminals having terminal electrodes and external terminals of the electronic device body electrically bonded through a solder layer, wherein the solder layer is comprised of an Sn—Sb high temperature lead-free solder, the ratio between the Sn and Sb in this solder layer is, by ratio by weight percent, in a range of Sn/Sb=70/30 to 90/10, and the solder layer and terminal electrodes are formed between them with a diffusion layer formed by diffusion of a conductive ingredient of the terminal electrodes into the solder layer.
摘要:
A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.
摘要:
A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.
摘要:
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
摘要:
A diagnostic voice instructing apparatus has a recording/playback device including a voice recording/playback LSI and a RAM, and converts an arbitrary instruction voice to a patient, which has been input through a microphone by a user for use in a scanning operation, into a digital signal and stores the signal in corresponding one of 15 channels of the RAM, the instructing voice may be input in an arbitrary language, dialect or expression. The recording/playback device is coupled to a scan controller, which controls the scanning operation of a CT apparatus, and a host controller, which sends commands to the recording/playback device and scan controller and receives control data from the scan controller. The host controller permits an operator to prepare ID data to each patient, which includes the name, and condition, of the patient, as well as designation of the necessary instructing voice to the patient in terms of a channel quantity. When the patient ID data is read out from the host controller and supplied to the recording/playback device, and when the CT apparatus starts scanning the patient in response to a command from the scan controller, an instructing voice is read out from the channel designated by the patient ID data at the proper timing in synchronism with the scanning operation and is supplied through an amplifier to a speaker for its reproduction.
摘要:
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
摘要:
A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb1−yMy)(ZrzTi1−z)O3, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01≦y≦0.10, and 0.51≦z≦0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe2O3, of Fe; and (c) 10-1000 ppm of Ag.
摘要翻译:一种压电烧结陶瓷,其由(a)100重量份具有由通式(Pb1-yMy)(ZrzTi1-z)O3表示的组成的主要成分组成的组合物,其中M为选自以下的至少一种元素: Sr,Ba和Ca,y和z分别满足0.01 <= y <= 0.10,和0.51 <= z <= 0.56的数字; (b)0.05-1.0重量份的Fe 2 O 3,Fe; 和(c)10-1000ppm的Ag。