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公开(公告)号：US11677372B2
公开(公告)日：2023-06-13
申请号：US17230729
申请日：2021-04-14
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Frank Zhiquang Bi , Mary Winters , Abhay Saranswarup Kochhar , Emad Mehdizadeh , Rohan W. Houlden , Jeffrey B. Shealy
IPC: H03H3/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H10N30/87 , H10N30/88 , H10N30/00 , H10N30/85 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H03H9/02 , H01L41/047 , H01L41/053 , H01L41/08 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337
CPC classification number: H03H3/02 , H01L41/0475 , H01L41/0477 , H01L41/053 , H01L41/081 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H03H2003/021 , H03H2003/025 , Y10T29/42
Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.
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2.发明授权公开(公告)号：US11671067B2
公开(公告)日：2023-06-06
申请号：US16822689
申请日：2020-03-18
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Ramakrishna Vetury , Jeffrey B. Shealy
IPC: H01L41/047 , H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H03H9/54 , H01L41/312
CPC classification number: H03H3/02 , H01L41/0475 , H01L41/0477 , H01L41/053 , H01L41/081 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H01L41/0805 , H01L41/312 , H03H2003/021 , H03H2003/025 , Y10T29/42
Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.
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公开(公告)号：US20230336151A1
公开(公告)日：2023-10-19
申请号：US18339939
申请日：2023-06-22
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Zhiqiang Bi
CPC classification number: H03H9/132 , H03H9/02157 , H03H9/131 , H03H9/547 , H03H9/171 , H03H9/02015
Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
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公开(公告)号：US20220182039A1
公开(公告)日：2022-06-09
申请号：US17110675
申请日：2020-12-03
Applicant: Akoustis,Inc.
Inventor： Saurabh Gupta , Zhiqiang Bi , Emad Mehdizadeh , Dae Ho Kim , Pinal Patel
Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.
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公开(公告)号：US20220182034A1
公开(公告)日：2022-06-09
申请号：US17514590
申请日：2021-10-29
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich , Dae Ho Kim , Zhiqiang Bi , Mary Winters
Abstract: A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
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Patent Agency Ranking
公开(公告)号：US12028046B2
公开(公告)日：2024-07-02
申请号：US17323332
申请日：2021-05-18
Applicant: Akoustis, Inc.
Inventor： Saurabh Gupta , Zhiqiang Bi , Dae Ho Kim , Pinal Patel , Katherine W. Davis , Emad Mehdizadeh
Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.
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7.发明公开公开(公告)号：US20240164216A1
公开(公告)日：2024-05-16
申请号：US18417530
申请日：2024-01-19
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey B. Shealy , Mary Winters , Dae Ho Kim , Abhay Saranswarup Kochhar
IPC: H10N30/076 , H03H3/02 , H10N30/053 , H10N30/06 , H10N30/85
CPC classification number: H10N30/076 , H03H3/02 , H10N30/053 , H10N30/06 , H10N30/85 , Y10T29/42 , Y10T29/49005
Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
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公开(公告)号：US11711064B2
公开(公告)日：2023-07-25
申请号：US17944475
申请日：2022-09-14
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Ramakrishna Vetury , Jeffrey B. Shealy
CPC classification number: H03H9/02015 , H03H3/02 , H03H9/02047 , H03H9/173 , H03H2003/025
Abstract: An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.
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公开(公告)号：US11695390B2
公开(公告)日：2023-07-04
申请号：US17130915
申请日：2020-12-22
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Zhiqiang Bi
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/131 , H03H9/171 , H03H9/547
Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
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10.发明申请公开(公告)号：US20220352456A1
公开(公告)日：2022-11-03
申请号：US17811222
申请日：2022-07-07
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey B. Shealy , Mary Winters , Dae Ho Kim , Abhay Saranswarup Kochhar
IPC: H01L41/316 , H01L41/18 , H01L41/29 , H01L41/273 , H03H3/02
Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
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