-
公开(公告)号：US12028046B2
公开(公告)日：2024-07-02
申请号：US17323332
申请日：2021-05-18
Applicant: Akoustis, Inc.
Inventor： Saurabh Gupta , Zhiqiang Bi , Dae Ho Kim , Pinal Patel , Katherine W. Davis , Emad Mehdizadeh
Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.
-
公开(公告)号：US11695390B2
公开(公告)日：2023-07-04
申请号：US17130915
申请日：2020-12-22
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Zhiqiang Bi
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/131 , H03H9/171 , H03H9/547
Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
-
公开(公告)号：US20230336151A1
公开(公告)日：2023-10-19
申请号：US18339939
申请日：2023-06-22
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Zhiqiang Bi
CPC classification number: H03H9/132 , H03H9/02157 , H03H9/131 , H03H9/547 , H03H9/171 , H03H9/02015
Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
-
公开(公告)号：US20220182039A1
公开(公告)日：2022-06-09
申请号：US17110675
申请日：2020-12-03
Applicant: Akoustis,Inc.
Inventor： Saurabh Gupta , Zhiqiang Bi , Emad Mehdizadeh , Dae Ho Kim , Pinal Patel
Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.
-
Patent Agency Ranking
公开(公告)号：US20220182034A1
公开(公告)日：2022-06-09
申请号：US17514590
申请日：2021-10-29
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich , Dae Ho Kim , Zhiqiang Bi , Mary Winters
Abstract: A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
-
公开(公告)号：US11870422B2
公开(公告)日：2024-01-09
申请号：US17110675
申请日：2020-12-03
Applicant: Akoustis, Inc.
Inventor： Saurabh Gupta , Zhiqiang Bi , Emad Mehdizadeh , Dae Ho Kim , Pinal Patel
Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.
-
公开(公告)号：US12160218B2
公开(公告)日：2024-12-03
申请号：US18064762
申请日：2022-12-12
Applicant: Akoustis, Inc.
Inventor： Zhiqiang Bi , Dae Ho Kim , Pinal Patel , Kathy W. Davis , Rohan W. Houlden
Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
-
8.发明公开公开(公告)号：US20230299733A1
公开(公告)日：2023-09-21
申请号：US18185577
申请日：2023-03-17
Applicant: Akoustis, Inc.
Inventor： Abhay Saranswarup Kochhar , Dae Ho Kim , Zhiqiang Bi , Emad Mehdizadeh , Mojtaba Hodjat-Shamami , Mary Winters , Rohan Houlden , Jeffrey B. Shealy
IPC: H03H3/02
CPC classification number: H03H3/02
Abstract: A piezoelectric resonator device can be formed to include a piezoelectric film including an active area configured to provide a thickness excited mode of vibration, a first electrode on a first surface of the piezoelectric film positioned to electromechanically couple to the active area, a second electrode on a second surface of the piezoelectric film, opposite the first surface, the second electrode positioned to electromechanically couple to the active area, an energy confinement frame extending on the piezoelectric film embedded in the first or second electrode, an inner side wall of the energy confinement frame facing toward the active area and extending around the active area to define a perimeter that separates the active area located inside the perimeter from an outer area located outside the perimeter adjacent to the active area, an outer side wall of the energy confinement frame facing toward the outer area and aligned to an outer side wall of the first or second electrode and a conformal low-impedance acoustic layer extending on the active area over the energy confinement frame to cover the outer side wall of the energy confinement frame, and onto the piezoelectric film in the outer area.
-
公开(公告)号：US11552613B2
公开(公告)日：2023-01-10
申请号：US16389818
申请日：2019-04-19
Applicant: Akoustis, Inc.
Inventor： Zhiqiang Bi , Dae Ho Kim , Pinal Patel , Kathy W Davis , Rohan W. Houlden
Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.012 seconds)
