公开(公告)号：US20240154602A9

公开(公告)日：2024-05-09

申请号：US17323332

申请日：2021-05-18

申请人： Akoustis, Inc.

发明人： Saurabh Gupta ,  Zhiqiang BI ,  Dae Ho KIM ,  Pinal Patel ,  Katherine W. Davis ,  Emad Mehdizadeh

IPC分类号： H03H9/205 ,  H03H3/02 ,  H03H9/56

CPC分类号： H03H9/205 ,  H03H3/02 ,  H03H9/568

摘要： A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

公开(公告)号：US20230344399A1

公开(公告)日：2023-10-26

申请号：US18342623

申请日：2023-06-27

申请人： Akoustis, Inc.

发明人： Ramakrishna VETURY ,  Alexander Y. Feldman ,  Michael D. Hodge ,  Art Geiss ,  Shawn R. Gibb ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Pinal Patel ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/56 ,  H03H3/04 ,  H03H9/17

CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/0514 ,  H03H9/1035 ,  H03H9/132 ,  H03H9/568 ,  H03H3/04 ,  H03H9/131 ,  H03H9/133 ,  H03H9/171 ,  H03H9/564 ,  H03H9/174 ,  H03H2003/0428 ,  H03H2003/0414

摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US20230336235A1

公开(公告)日：2023-10-19

申请号：US18339796

申请日：2023-06-22

申请人： Akoustis, Inc.

发明人： Jeffrey B. SHEALY ,  Rohan W. HOULDEN ,  David M. ALCHELE

IPC分类号： H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72

CPC分类号： H04B7/0814 ,  H04B1/006 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03F2200/294 ,  H03H9/02118

摘要： A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US20230291376A1

公开(公告)日：2023-09-14

申请号：US18321529

申请日：2023-05-22

申请人： Akoustis, Inc.

发明人： Dae Ho KIM ,  Mary WINTERS ,  Ramakrishna VETURY ,  Jeffrey B. SHEALY

IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/54 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/87 ,  H10N30/00

CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/173 ,  H03H9/105 ,  H03H9/0523 ,  H03H9/02015 ,  H03H9/547 ,  H03H9/177 ,  H03H9/175 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/875 ,  H10N30/877 ,  H10N30/10513 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42 ,  H10N30/072

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

公开(公告)号：US11677372B2

公开(公告)日：2023-06-13

申请号：US17230729

申请日：2021-04-14

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Saranswarup Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H10N30/87 ,  H10N30/88 ,  H10N30/00 ,  H10N30/85 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H03H9/02 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337

CPC分类号： H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11671067B2

公开(公告)日：2023-06-06

申请号：US16822689

申请日：2020-03-18

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H01L41/047 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H03H9/54 ,  H01L41/312

CPC分类号： H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H01L41/0805 ,  H01L41/312 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

公开(公告)号：US11652469B2

公开(公告)日：2023-05-16

申请号：US16552999

申请日：2019-08-27

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy ,  Shawn R. Gibb ,  Rohan W. Houlden ,  Joel M. Morgan

IPC分类号： H03H9/54 ,  H03H9/17 ,  H03H3/02 ,  H03H9/125 ,  H03H9/02

CPC分类号： H03H9/54 ,  H03H3/02 ,  H03H9/02007 ,  H03H9/125 ,  H03H9/17

摘要： An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

公开(公告)号：US20230114606A1

公开(公告)日：2023-04-13

申请号：US18063003

申请日：2022-12-07

申请人： Akoustis, Inc.

发明人： Ramakrishna VETURY ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H01L41/047 ,  H03H9/54 ,  H03H9/13 ,  H03H9/10 ,  H03H9/05

摘要： A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

公开(公告)号：US11581872B2

公开(公告)日：2023-02-14

申请号：US17661367

申请日：2022-04-29

申请人： Akoustis, Inc.

发明人： Ya Shen ,  Michael D. Hodge

IPC分类号： H04B1/10 ,  H03H9/54 ,  H03H7/01 ,  H03H9/205 ,  H03H9/02

摘要： A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.

公开(公告)号：US11581306B2

公开(公告)日：2023-02-14

申请号：US17180174

申请日：2021-02-19

申请人： Akoustis, Inc.

发明人： Shawn R. Gibb ,  David Aichele ,  Ramakrishna Vetury ,  Mark D. Boomgarden ,  Jeffrey B. Shealy

IPC分类号： H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/20 ,  H01L29/20 ,  H01L29/417 ,  H01L29/80 ,  H03F3/19 ,  H03F3/21 ,  H03H3/08 ,  H03H9/46 ,  H04B1/44 ,  H01L41/18 ,  H01L41/314 ,  H01L41/37 ,  H03H9/02 ,  H01L29/778 ,  H03H3/02 ,  H01L23/66 ,  H03H9/05 ,  H03H9/10

摘要： A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.