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1.发明授权公开(公告)号：US06563566B2
公开(公告)日：2003-05-13
申请号：US09771793
申请日：2001-01-29
IPC分类号： G03B2754
CPC分类号： G03F1/32 , G03F1/34 , G03F7/70125 , G03F7/70433 , G03F7/705
摘要： A system and method is described for lithographically printing patterns on a semiconductor using combinations of illumination and mask patterns which are optimized together to produce the desired pattern. The method of optimizing both illumination and mask pattern allows the development of mask patterns that are not constrained by the geometry of the desired pattern to be printed. Thus, the method provides high quality images even when the desired printed patterns have critical dimensions that approach the resolution limits of a lithographic system. The resulting mask patterns using the method do not obviously correspond to the desired patterns to be printed. Such masks may include phase-shifting technology that use destructive interference to define dark areas of the image and are not constrained to conform to the desired printed pattern.
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2.发明授权Methods and compositions for imaging acids in chemically amplified photoresists using pH-dependent fluorophores 失效使用pH依赖性荧光团在化学放大光致抗体中成像酸的方法和组合物公开(公告)号：US06376149B2
公开(公告)日：2002-04-23
申请号：US09320101
申请日：1999-05-26
IPC分类号： G03C516
CPC分类号： G03F7/0045 , G03F7/105
摘要： A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.
摘要翻译： 在化学放大的光致抗蚀剂中成像酸的方法包括将包含pH依赖荧光团的化学放大的光致抗蚀剂暴露于辐射。 在暴露于诸如深紫外辐射的辐射之后，化学放大的光致抗蚀剂产生酸，然后通过pH依赖性荧光团的荧光显现出酸。 从pH依赖性荧光团的荧光产生图像，从而提供光致抗蚀剂中酸的位置的图。 在抗蚀剂组合物的曝光后烘烤之前，图像能够被可视化。 包含pH依赖性荧光团的化学放大光致抗蚀剂在本发明的实践中是有用的。 该方法特别用于检查化学放大光致抗蚀剂中光酸产生剂的效率，因为其允许从业者直接测定光致抗蚀剂内产生的酸的量的能力。
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公开(公告)号：US06891169B2
公开(公告)日：2005-05-10
申请号：US10348658
申请日：2003-01-21
IPC分类号： H01J37/073 , H01J1/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/30 , H01J29/70 , H01J29/72
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/0635 , H01J2237/30433
摘要： An e-beam system generates a set of massively parallel beams of order of magnitude 1,000 by employing a flash eprom to store calibration data and to receive on/off signals directed through the address system of the memory array, the individual electron sources being mounted above the memory array in a geometric array that tracks the structure of the memory array.
摘要翻译： 电子束系统通过使用闪光eprom存储校准数据并且接收通过存储器阵列的地址系统引导的接通/断开信号，生成一组数量级为1000的大规模并行光束，各个电子源被安装在 跟踪存储器阵列结构的几何数组中的存储器阵列。
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公开(公告)号：US06566030B2
公开(公告)日：2003-05-20
申请号：US10001467
申请日：2001-10-31
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/105
摘要： A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.
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