利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.047 秒)

    Method and apparatus for analyzing mixtures of gases
    5.
    发明授权
    Method and apparatus for analyzing mixtures of gases 失效
    用于分析气体混合物的方法和装置

    公开(公告)号：US06960476B2

    公开(公告)日：2005-11-01

    申请号：US09977791

    申请日：2001-10-15

    申请人： Patricia A. Morris

    发明人： Patricia A. Morris

    IPC分类号： G01J5/48 ,  G01N27/02 ,  G01N27/12 ,  G01N27/22 ,  G01N33/00 ,  G01N7/00 ,  G01N21/00 ,  G01N27/00 ,  G01N31/00

    CPC分类号： G01N33/0031 ,  Y10T436/11

    摘要： Disclosed herein is a method and apparatus for analyzing, sensing and measuring the concentrations of various gases, including NOx, hydrocarbons, carbon monoxide and oxygen, in a multi-component gas system using chemical sensors and chemical sensor arrays. The sensors and sensor arrays use chemo/electro-active materials to analyze and detect the presence of gases.

    摘要翻译： 本文公开了一种用于在使用化学传感器和化学传感器的多组分气体系统中分析，感测和测量各种气体（包括NO x，CO 2，一氧化碳和氧气）的浓度的方法和装置 阵列 传感器和传感器阵列使用化学/电活性材料来分析和检测气体的存在。

    Infrared thermographic screening technique for semiconductor-based chemical sensors
    6.
    发明授权
    Infrared thermographic screening technique for semiconductor-based chemical sensors 失效
    基于半导体化学传感器的红外热成像技术

    公开(公告)号：US06498046B2

    公开(公告)日：2002-12-24

    申请号：US09978129

    申请日：2001-10-16

    申请人： Eugene Michael McCarron ,  Patricia A. Morris

    发明人： Eugene Michael McCarron ,  Patricia A. Morris

    IPC分类号： H01L2100

    CPC分类号： G01N33/007 ,  G01N25/72

    摘要： An infrared thermographic technique for rapid parallel screening of compositional arrays of potential chemical sensor materials has been developed. The technique involves applying a voltage bias and the associated current to the sample array during screening. The thermographic response is amplified by the resistance change that occurs with gas adsorption, and is directly monitored as the temperature change associated with I2R heating. This technique can also be used to determine n- or p-type character for the semiconductor in question.

    摘要翻译： 已经开发了用于快速平行筛选潜在化学传感器材料的组成阵列的红外热成像技术。 该技术涉及在筛选期间将电压偏置和相关联的电流施加到样品阵列。 通过气体吸附发生的电阻变化来放大热成像响应，并直接监测与I2R加热相关的温度变化。 该技术也可用于确定所讨论的半导体的n型或p型字符。

    Method and apparatus for analyzing mixtures of gases
    7.
    发明授权
    Method and apparatus for analyzing mixtures of gases 失效
    用于分析气体混合物的方法和装置

    公开(公告)号：US08043566B2

    公开(公告)日：2011-10-25

    申请号：US11034529

    申请日：2005-01-12

    申请人： Patricia A. Morris

    发明人： Patricia A. Morris

    IPC分类号： G01N31/12

    CPC分类号： G01N33/0031 ,  Y10T436/11

    摘要： Disclosed herein is a method and apparatus for analyzing, sensing and measuring information related to the concentrations of various gases, including NOx, hydrocarbons, carbon monoxide and oxygen, in a multi-component gas system using chemical sensors and chemical sensor arrays. The sensors and sensor arrays use chemo/electro-active materials to analyze and detect the presence of gases.

    摘要翻译： 本文公开了一种用于在使用化学传感器和化学传感器阵列的多组分气体系统中分析，感测和测量与各种气体（包括NOx，碳氢化合物，一氧化碳和氧气）的浓度有关的信息的方法和装置。 传感器和传感器阵列使用化学/电活性材料来分析和检测气体的存在。

    Process for reducing the damage susceptibility in optical quality crystals
    8.
    发明授权
    Process for reducing the damage susceptibility in optical quality crystals 失效
    降低光学质量晶体的损伤敏感性的方法

    公开(公告)号：US5411723A

    公开(公告)日：1995-05-02

    申请号：US123662

    申请日：1993-09-22

    申请人： Patricia A. Morris

    发明人： Patricia A. Morris

    IPC分类号： C30B29/22 ,  C30B33/00 ,  C01B25/26 ,  C01G28/02 ,  C30B31/00

    CPC分类号： C30B33/00 ,  C30B29/10 ,  C30B29/14

    摘要： A process is disclosed for treating a crystal of MTiOXO.sub.4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof and X is selected from the group consisting of P, As and mixtures thereof, which includes the step of heating said crystal in the presence of a mixture of MTiOXO.sub.4 and at least one inorganic compound of one or more monovalent cations selected from the group consisting of Rb+, K+, Cs+ and Ti+ (said inorganic compound(s) being selected to provide a source of vapor phase monovalent cation and being present in an amount sufficient to provide at least a 0.1 mole % excess of the monovalent cation in relation to the M in the MTiOXO.sub.4 in said mixture) at a temperature of from about 400.degree. C. to 950.degree. C. and a pressure of at least 14 psi, and in the presence of a gaseous source of oxygen for a time sufficient to decrease the optical damage susceptibility of said crystal.

    摘要翻译： 公开了一种处理具有M和O的晶体结构缺陷的MTiOXO4晶体的方法，其中M选自K，Rb，Tl和NH4及其混合物，X选自P， As及其混合物，其包括在MTiOXO4和选自Rb +，K +，Cs +和Ti +的一种或多种一价阳离子的至少一种无机化合物存在下加热所述晶体的步骤（所述无机化合物 被选择为提供气相一价阳离子源，并且以足以在所述混合物中的MTiOXO4中相对于M提供至少0.1摩尔％过量的一价阳离子的量存在），温度为 约400℃至950℃，压力至少为14psi，并且在气态氧气源的存在下，足以降低所述晶体的光学损伤敏感性的时间。