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公开(公告)号：US20060060137A1
公开(公告)日：2006-03-23
申请号：US11096861
申请日：2005-03-31
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译： 在使用氯化钛（TiCl 4 S）和氨（NH 3 3））作为前体的间歇式反应器中形成氮化钛（TiN）膜。 TiCl 4在时间上分离的脉冲中流入反应器。 NH 3还可以在时间间隔的脉冲中流入反应器，该脉冲与TiCl 4脉冲交替，或NH 3 3可以流动 连续地进入反应器，同时以脉冲形式引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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公开(公告)号：US20070077775A1
公开(公告)日：2007-04-05
申请号：US11634043
申请日：2006-12-04
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译： 在使用氯化钛（TiCl 4 S）和氨（NH 3 3））作为前体的间歇式反应器中形成氮化钛（TiN）膜。 TiCl 4在时间上分离的脉冲中流入反应器。 NH 3还可以在时间间隔的脉冲中流入反应器，该脉冲与TiCl 4脉冲交替，或NH 3 3可以流动 连续地进入反应器，同时以脉冲形式引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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公开(公告)号：US07732350B2
公开(公告)日：2010-06-08
申请号：US11634043
申请日：2006-12-04
申请人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
IPC分类号： H01L21/469
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译： 使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器中形成氮化钛（TiN）膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器，或者NH 3可以连续流入反应器中，同时以脉冲引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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公开(公告)号：US07966969B2
公开(公告)日：2011-06-28
申请号：US11096861
申请日：2005-03-31
申请人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译： 使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器中形成氮化钛（TiN）膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器，或者NH 3可以连续流入反应器中，同时以脉冲引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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公开(公告)号：US06481945B1
公开(公告)日：2002-11-19
申请号：US09719334
申请日：2000-12-05
申请人： Albert Hasper , Frank Huussen , Cornelis Marinus Kooijman , Theodorus Gerardus Maria Oosterlaken , Jack Herman Van Putten , Christianus Gerardus Maria Ridder , Gert-Jan Snijders , Jeroen Jan Stoutjesdijk , Jan Zinger
发明人： Albert Hasper , Frank Huussen , Cornelis Marinus Kooijman , Theodorus Gerardus Maria Oosterlaken , Jack Herman Van Putten , Christianus Gerardus Maria Ridder , Gert-Jan Snijders , Jeroen Jan Stoutjesdijk , Jan Zinger
IPC分类号： B65G4907
CPC分类号： H01L21/67751 , H01L21/67757 , Y10S414/139 , Y10S414/14
摘要： Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.
摘要翻译： 增强的插入件形成有具有圆柱形把手和从握柄延伸的突出部。 超硬材料层结合在突起的顶部。 插入件安装在岩石钻头上，并与中心的地层接触。 超硬材料层在包括插入件和地层之间的接触区域的主要部分的临界区域是最厚的。 也可以在超硬材料层和突起之间形成过渡层，以减少在超硬材料和突起之间的界面上形成的应力。
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公开(公告)号：US06876191B2
公开(公告)日：2005-04-05
申请号：US10373645
申请日：2003-02-24
IPC分类号： B65G49/07 , H01L21/02 , H01L21/677 , G01R31/02 , G01R31/26
CPC分类号： H01L21/67769
摘要： An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.
摘要翻译： 一种用于处理晶片的设备，设有至少一个处理室，该设备设置有馈送部分，其中容纳在晶片存储箱中的晶片可以被馈送到设备中，该设备通过装置设置有晶片处理装置 其中可以将晶片从晶片储存盒中取出以便在处理室中进行处理，并且该设备设置有至少一个传感器盒，其布置成使得晶片处理装置可以通过一个晶片处理装置将晶片馈送到传感器盒中 所述至少一个传感器盒被布置成在晶片处执行测量，其中所述至少一个传感器盒可移动地布置，并且所述设备设置有传感器盒处理 设置成将所述至少一个传感器盒从存储位置移动到测量位置的装置。
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公开(公告)号：US07410355B2
公开(公告)日：2008-08-12
申请号：US11356697
申请日：2006-02-17
申请人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。
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公开(公告)号：US20060105107A1
公开(公告)日：2006-05-18
申请号：US11251546
申请日：2005-10-14
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.
摘要翻译： 半导体制造处理室中的颗粒形成通过防止密封处理室的门板上的冷凝来减少。 当反应物气体冷凝在门板的相对较冷的表面上时，可以在处理室中形成颗粒。 通过将门板加热到足够高的温度以防止在使反应气体进入处理室之前发生冷凝，使颗粒形成最小化。 可以使用与门板直接接触的热源（例如电阻加热器）来加热门板，或者热源可以通过辐射或感应加热从一定距离加热门板。 此外，门板可以打开以允许加载和卸载晶片负载。 当它通过门板附近的法兰时，晶片负载可以将热量传递到这些法兰。 为了防止过热，凸缘设置有具有通过O形环与法兰间隔开的壁的冷却剂容纳通道。 可以改变通道壁与凸缘的间隔，以改变使用通道实现的热接触和冷却的量。
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公开(公告)号：US07427571B2
公开(公告)日：2008-09-23
申请号：US11251546
申请日：2005-10-14
IPC分类号： H01L21/31
CPC分类号： C23C16/4404
摘要： Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.
摘要翻译： 半导体制造处理室中的颗粒形成通过防止密封处理室的门板上的冷凝来减少。 当反应物气体冷凝在门板的相对较冷的表面上时，可以在处理室中形成颗粒。 通过将门板加热到足够高的温度以防止在使反应气体进入处理室之前发生冷凝，使颗粒形成最小化。 可以使用与门板直接接触的热源（例如电阻加热器）来加热门板，或者热源可以通过辐射或感应加热从一定距离加热门板。 此外，门板可以打开以允许加载和卸载晶片负载。 当它通过门板附近的法兰时，晶片负载可以将热量传递到这些法兰。 为了防止过热，凸缘设置有具有通过O形环与法兰间隔开的壁的冷却剂容纳通道。 可以改变通道壁与凸缘的间隔，以改变使用通道实现的热接触和冷却的量。
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公开(公告)号：US20060141808A1
公开(公告)日：2006-06-29
申请号：US11356697
申请日：2006-02-17
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。
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