摘要:
A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
摘要:
A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
摘要:
A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
摘要:
In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target a radiation beam onto a surface; and a scattered radiation collecting assembly that collects radiation scattered from the surface. The radiation targeting assembly generates primary and secondary beams. Data collected from the reflections of the primary and secondary beams may be used in a dynamic range extension routine, alone or in combination with a power attenuation routine.
摘要:
A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
摘要:
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
摘要:
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
摘要:
Various embodiments for extended defect sizing range for wafer inspection are provided. One inspection system includes an illumination subsystem configured to direct light to the wafer. The system also includes an image sensor configured to detect light scattered from wafer defects and to generate output responsive to the scattered light. The image sensor is also configured to not have an anti-blooming feature such that when a pixel in the image sensor reaches full well capacity, excess charge flows from the pixel to one or more neighboring pixels in the image sensor. The system further includes a computer subsystem configured to detect the defects on the wafer using the output and to determine a size of the defects on the wafer using the output generated by a pixel and any neighboring pixels of the pixel to which the excess charge flows.
摘要:
Disclosed herein is a method and apparatus for automatic correction of beam waist position drift in real time, using wafer inspection data taken during normal tool operation.Also disclosed herein is an improved laser astigmatism corrector for use either internal or external to the laser.