公开(公告)号：US20060040513A1

公开(公告)日：2006-02-23

申请号：US10923247

申请日：2004-08-20

申请人： Alessandro Callegari ,  Stephan Cohen ,  Fuad Doany

发明人： Alessandro Callegari ,  Stephan Cohen ,  Fuad Doany

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

公开(公告)号：US20070284698A1

公开(公告)日：2007-12-13

申请号：US11693409

申请日：2007-03-29

申请人： Alessandro Callegari ,  Stephen Cohen ,  Fuad Doany

发明人： Alessandro Callegari ,  Stephen Cohen ,  Fuad Doany

IPC分类号： H01L23/29

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深超极化的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：US09285554B2

公开(公告)日：2016-03-15

申请号：US13370886

申请日：2012-02-10

申请人： Fuad Doany ,  Benjamin G. Lee ,  Clint L. Schow

发明人： Fuad Doany ,  Benjamin G. Lee ,  Clint L. Schow

IPC分类号： G02B6/42 ,  G02B6/124 ,  G02B6/293 ,  H01L25/16

CPC分类号： G02B6/34 ,  G02B6/12 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/13 ,  G02B6/136 ,  G02B6/29323 ,  G02B6/30 ,  G02B6/305 ,  G02B6/32 ,  G02B6/3652 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic integrated circuit for coupling light to or from an optical waveguide formed in an optical device layer in a near-normal angle to that layer. In an embodiment, the integrated circuit comprises a semiconductor body including a metal-dielectric stack, an optical device layer, a buried oxide layer and a semiconductor substrate arranged in series between first and second opposite sides of the semiconductor body. At least one optical waveguide is formed in the optical device layer for guiding light in a defined plane in that device layer. Diffractive coupling elements are disposed in the optical device layer to couple light from the waveguide toward the second surface of the semiconductor body at a near-normal angle to the defined plane in the optical device layer. In an embodiment, an optical fiber is positioned against the semiconductor body for receiving the light from the coupling elements.

摘要翻译： 一种光电子集成电路，用于将光耦合到形成在光学器件层中的光波导与该层成近似法线的角度。 在一个实施例中，集成电路包括半导体本体，其包括金属 - 电介质堆叠，光学器件层，埋入氧化物层和半导体衬底，其串联布置在半导体主体的第一和第二相对侧之间。 在光学器件层中形成至少一个光波导，用于在该器件层中的限定平面中引导光。 衍射耦合元件设置在光学器件层中，以将光从波导朝向半导体本体的第二表面以与光学器件层中的限定平面成近似法线的角度耦合。 在一个实施例中，光纤抵靠半导体本体定位，用于接收来自耦合元件的光。

公开(公告)号：US20130209026A1

公开(公告)日：2013-08-15

申请号：US13370886

申请日：2012-02-10

申请人： Fuad Doany ,  Benjamin G. Lee ,  Clint L. Schow

发明人： Fuad Doany ,  Benjamin G. Lee ,  Clint L. Schow

IPC分类号： G02B6/12 ,  H01L33/58

CPC分类号： G02B6/34 ,  G02B6/12 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/13 ,  G02B6/136 ,  G02B6/29323 ,  G02B6/30 ,  G02B6/305 ,  G02B6/32 ,  G02B6/3652 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic integrated circuit for coupling light to or from an optical waveguide formed in an optical device layer in a near-normal angle to that layer. In an embodiment, the integrated circuit comprises a semiconductor body including a metal-dielectric stack, an optical device layer, a buried oxide layer and a semiconductor substrate arranged in series between first and second opposite sides of the semiconductor body. At least one optical waveguide is formed in the optical device layer for guiding light in a defined plane in that device layer. Diffractive coupling elements are disposed in the optical device layer to couple light from the waveguide toward the second surface of the semiconductor body at a near-normal angle to the defined plane in the optical device layer. In an embodiment, an optical fiber is positioned against the semiconductor body for receiving the light from the coupling elements.

摘要翻译： 一种光电子集成电路，用于将光耦合到形成在光学器件层中的光波导与该层成近似法线的角度。 在一个实施例中，集成电路包括半导体本体，其包括金属 - 电介质堆叠，光学器件层，埋入氧化物层和半导体衬底，其串联布置在半导体主体的第一和第二相对侧之间。 在光学器件层中形成至少一个光波导，用于在该器件层中的限定平面中引导光。 衍射耦合元件设置在光学器件层中，以将光从波导朝向半导体本体的第二表面以与光学器件层中的限定平面成近似法线的角度耦合。 在一个实施例中，光纤抵靠半导体本体定位，用于接收来自耦合元件的光。

公开(公告)号：US20080019633A1

公开(公告)日：2008-01-24

申请号：US11830200

申请日：2007-07-30

申请人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

发明人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

IPC分类号： G02B6/12 ,  B29D11/00

CPC分类号： B29D11/0075 ,  G02B6/42 ,  G02B6/4224 ,  G02B6/423 ,  G02B6/4249

摘要： Apparatus and methods for packaging optical communication devices include optical bench structures, such as silicon-optical benches (SiOB). An optical communications apparatus includes an optical bench comprising a substrate having an electrical turning via formed therein. An optoelectronic (OE) chip and integrated circuit (IC) chip are mounted on the optical bench and electrically connected using the electrical turning via. The electrical turning via extends in directions both perpendicular and transverse to a surface of the substrate such that the OE chip and IC chip can be mounted on perpendicular surfaces of the optical bench in close proximity and electrically connected using the electrical turning via. More specifically, the OE chip and IC chip are mounted on the optical bench such that a light-emitting or light-detecting surface of the OE chip is substantially perpendicular to a surface of the IC chip having contacts, and such that optical transmission lines that are mounted parallel to the substrate surface can be directly coupled to the OE chip.

摘要翻译： 用于封装光通信设备的装置和方法包括光学台架结构，例如硅光学台（SiOB）。 一种光通信设备包括一个光学台，包括一个具有形成在其中的电转通路的基板。 光电（OE）芯片和集成电路（IC）芯片安装在光学平台上，并使用电动转向电路进行电气连接。 电动转向通孔在垂直于基板表面的横向方向上延伸，使得OE芯片和IC芯片可以安装在光学平台的垂直表面上，并且使用电动转向电路进行电连接。 更具体地，OE芯片和IC芯片安装在光学平台上，使得OE芯片的发光或光检测表面基本上垂直于具有触点的IC芯片的表面，并且使得光传输线 平行于衬底表面安装可以直接耦合到OE芯片。

公开(公告)号：US20070206908A1

公开(公告)日：2007-09-06

申请号：US11257904

申请日：2005-10-25

申请人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

发明人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

IPC分类号： G02B6/36

CPC分类号： B29D11/0075 ,  G02B6/42 ,  G02B6/4224 ,  G02B6/423 ,  G02B6/4249

摘要： Apparatus and methods for packaging optical communication devices include optical bench structures, such as silicon-optical benches (SiOB). An optical communications apparatus includes an optical bench comprising a substrate having an electrical turning via formed therein. An optoelectronic (OE) chip and integrated circuit (IC) chip are mounted on the optical bench and electrically connected using the electrical turning via. The electrical turning via extends in directions both perpendicular and transverse to a surface of the substrate such that the OE chip and IC chip can be mounted on perpendicular surfaces of the optical bench in close proximity and electrically connected using the electrical turning via. More specifically, the OE chip and IC chip are mounted on the optical bench such that a light-emitting or light-detecting surface of the OE chip is substantially perpendicular to a surface of the IC chip having contacts, and such that optical transmission lines that are mounted parallel to the substrate surface can be directly coupled to the OE chip.

摘要翻译： 用于封装光通信设备的装置和方法包括光学台架结构，例如硅光学台（SiOB）。 一种光通信设备包括一个光学台，包括一个具有形成在其中的电转通路的基板。 光电（OE）芯片和集成电路（IC）芯片安装在光学平台上，并使用电动转向电路进行电气连接。 电动转向通孔在垂直于基板表面的横向方向上延伸，使得OE芯片和IC芯片可以安装在光学平台的垂直表面上，并且使用电动转向电路进行电连接。 更具体地，OE芯片和IC芯片安装在光学平台上，使得OE芯片的发光或光检测表面基本上垂直于具有触点的IC芯片的表面，并且使得光传输线 平行于衬底表面安装可以直接耦合到OE芯片。

公开(公告)号：US20050063634A1

公开(公告)日：2005-03-24

申请号：US10669944

申请日：2003-09-24

申请人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

发明人： Guy Cohen ,  Fuad Doany ,  Jeannine Trewhella

IPC分类号： G02B6/00 ,  G02B6/12 ,  G02B6/36 ,  G02B6/42 ,  H04B10/00 ,  H04B10/12

CPC分类号： B29D11/0075 ,  G02B6/42 ,  G02B6/4224 ,  G02B6/423 ,  G02B6/4249

摘要： Apparatus and methods for packaging optical communication devices include optical bench structures, such as silicon-optical benches (SiOB). An optical communications apparatus includes an optical bench comprising a substrate having an electrical turning via formed therein. An optoelectronic (OE) chip and integrated circuit (IC) chip are mounted on the optical bench and electrically connected using the electrical turning via. The electrical turning via extends in directions both perpendicular and transverse to a surface of the substrate such that the OE chip and IC chip can be mounted on perpendicular surfaces of the optical bench in close proximity and electrically connected using the electrical turning via. More specifically, the OE chip and IC chip are mounted on the optical bench such that a light-emitting or light-detecting surface of the OE chip is substantially perpendicular to a surface of the IC chip having contacts, and such that optical transmission lines that are mounted parallel to the substrate surface can be directly coupled to the OE chip.

摘要翻译： 用于封装光通信设备的装置和方法包括光学台架结构，例如硅光学台（SiOB）。 一种光通信设备包括一个光学台，包括一个具有形成在其中的电转通路的基板。 光电（OE）芯片和集成电路（IC）芯片安装在光学平台上，并使用电动转向电路进行电气连接。 电动转向通孔在垂直于基板表面的横向方向上延伸，使得OE芯片和IC芯片可以安装在光学平台的垂直表面上，并且使用电动转向电路进行电连接。 更具体地，OE芯片和IC芯片安装在光学平台上，使得OE芯片的发光或光检测表面基本上垂直于具有触点的IC芯片的表面，并且使得光传输线 平行于衬底表面安装可以直接耦合到OE芯片。

公开(公告)号：US20050169597A1

公开(公告)日：2005-08-04

申请号：US11096424

申请日：2005-04-01

申请人： Evan Colgan ,  Fuad Doany ,  Bruce Furman ,  Daniel Stigliani

发明人： Evan Colgan ,  Fuad Doany ,  Bruce Furman ,  Daniel Stigliani

IPC分类号： G02B6/36 ,  G02B6/42 ,  G02B6/00

CPC分类号： G02B6/3636 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/4214 ,  G02B6/423

摘要： Optical devices, components and methods for mounting optical fibers and for side-coupling light to/from optical fibers using a modified silicon V-groove, or silicon V-groove array, wherein V-grooves, which are designed for precisely aligning/spacing optical fibers, are “recessed” below the surface of the silicon. Optical fibers can be recessed below the surface of the silicon substrate such that a precisely controlled portion of the cladding layer extending above the silicon surface can be removed (lapped). With the cladding layer removed, the separation between the fiber core(s) and optoelectronic device(s) can be reduced resulting in improved optical coupling when the optical fiber silicon array is connected to, e.g., a VCSEL array.

公开(公告)号：US5621486A

公开(公告)日：1997-04-15

申请号：US493736

申请日：1995-06-22

申请人： Fuad Doany ,  Derek B. Dove ,  Rama Singh ,  Alan Rosenbluth ,  George Chiu ,  Thomas Cipolla ,  Janusz Wilczynski

发明人： Fuad Doany ,  Derek B. Dove ,  Rama Singh ,  Alan Rosenbluth ,  George Chiu ,  Thomas Cipolla ,  Janusz Wilczynski

IPC分类号： G02F1/13 ,  G02B27/18 ,  G02B27/28 ,  H04N9/31 ,  H04N5/74

CPC分类号： H04N9/3105

摘要： An optical system is described consisting of reflection birefringent light valves, polarizing beam splitter, color image combining prisms, illumination system having a light tunnel, projection lens, filters for color and contrast control, and screen placed in a configuration offering advantages for a high resolution color display.

摘要翻译： 一种光学系统被描述为由反射双折射光阀，偏振分束器，彩色图像组合棱镜，具有光通道的照明系统，投影透镜，用于颜色和对比度控制的滤光器以及放置在提供高分辨率优点的配置中的屏幕 彩色显示。

公开(公告)号：US08231284B2

公开(公告)日：2012-07-31

申请号：US11691303

申请日：2007-03-26

申请人： Fuad Doany ,  Clint L. Schow

发明人： Fuad Doany ,  Clint L. Schow

IPC分类号： G02B6/36 ,  G02B6/43 ,  G02B6/32 ,  G02B6/12

CPC分类号： H04B10/40 ,  G02B6/43

摘要： A novel parallel optical module having combined optical signal transmit and receive function for high-speed performance. The optical module includes a plurality, e.g., sixteen 10-Gb/s transmitter and receiver channels for a 160-Gb/s bidirectional aggregate data rate. The module utilizes a single-chip CMOS optical transceiver containing both transmitter and receiver circuits. 16-channel high-speed photodiode (PD) and VCSEL arrays are flip-chip attached to the low-power CMOS IC. The substrate emitting/illuminated VCSEL and PD arrays operate at 985 nm and include collimating lenses integrated into the backside of the substrate. The IC-OE assembly is then flip-chip attached to a high density organic package forming the transceiver optical module. The exclusive use of flip-chip packaging for both the IC-to-optoelectronic (OE) devices and for the IC-to-organic package minimizes the module footprint and associated packaging parasitics.

摘要翻译： 一种具有组合的光信号发射和接收功能的新型并行光模块，用于高速性能。 该光模块包括用于160Gb / s双向聚合数据速率的多个，例如十六个10Gb / s的发射机和接收机信道。 该模块采用包含发射机和接收机电路的单芯片CMOS光收发器。 16通道高速光电二极管（PD）和VCSEL阵列倒装芯片连接到低功耗CMOS IC。 衬底发射/照明VCSEL和PD阵列在985nm处工作，并且包括整合到衬底背面的准直透镜。 然后将IC-OE组件倒装芯片连接到形成收发器光学模块的高密度有机封装。 IC-to-optoelectronic（OE）器件和IC-to-organic封装的独家使用倒装芯片封装可最大限度地减少模块占位面积和相关的封装寄生效应。