公开(公告)号：USD781371S1

公开(公告)日：2017-03-14

申请号：US29544893

申请日：2015-11-06

Applicant: Stephan Cohen

Designer： Stephan Cohen

公开(公告)号：US20050206004A1

公开(公告)日：2005-09-22

申请号：US11128493

申请日：2005-05-13

Applicant: Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

Inventor： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：USD1009983S1

公开(公告)日：2024-01-02

申请号：US29801793

申请日：2021-07-30

Applicant: Stephan Cohen

Designer： Stephan Cohen

Abstract: FIG. 1 is perspective view of a drum stick showing my new design.
FIG. 2 is an enlarged, right side view thereof.
FIG. 3 is an enlarged, left side view thereof.
FIG. 4 is a front view of the drum stick of FIG. 1.
FIG. 5 is a back view of the drum stick of FIG. 1.
FIG. 6 is a top view of the drum stick of FIG. 1; and,
FIG. 7 is a bottom view of the drum stick of FIG. 1.

公开(公告)号：USD779812S1

公开(公告)日：2017-02-28

申请号：US29547009

申请日：2015-11-30

Applicant: Stephan Cohen

Designer： Stephan Cohen

公开(公告)号：US20070237970A1

公开(公告)日：2007-10-11

申请号：US11763829

申请日：2007-06-15

Applicant: Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

Inventor： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

IPC: C23C16/00 ,  B32B9/04

CPC classification number: H01L21/02167 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/24917 ,  Y10T428/249953 ,  H01L2924/00

Abstract: A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion battier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

Abstract translation: 提供了可用于诸如多层互连布线结构的半导体电子器件中的扩散屏障。 扩散阻挡层的特征在于具有小于3.5，优选小于3.0的低介电常数，并且能够基本上防止Cu和/或氧扩散到电子器件的有源器件区域。 由于扩散阻挡层具有低介电常数，所以扩散阻挡层对互连结构的有效介电常数只有较小的影响。 低k扩散阻挡层包括Si，C，H和N的原子.N原子在低k扩散势垒内不均匀分布。 任选地，低k扩散阻挡层可以包括Ge，O的原子，诸如F的卤素或其任何组合。

公开(公告)号：US20060040513A1

公开(公告)日：2006-02-23

申请号：US10923247

申请日：2004-08-20

Applicant: Alessandro Callegari ,  Stephan Cohen ,  Fuad Doany

Inventor： Alessandro Callegari ,  Stephan Cohen ,  Fuad Doany

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

公开(公告)号：US20050087876A1

公开(公告)日：2005-04-28

申请号：US10627794

申请日：2003-07-25

Applicant: Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

Inventor： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

Abstract translation: 本发明包括一种互连结构，其中包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层，其中陶瓷扩散阻挡层具有组成为N 其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 <= x <= 0.9， 对于v + w + x + y + z = 1，0 <= y <= 0.7,0.01 <= z <= 0.8。 陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。 本发明还包括用于形成本发明的陶瓷扩散阻挡层的方法，该方法包括沉积具有组合物的组合物的聚合物预陶瓷的步骤 其中0.1