High resolution continuously distributed silicon photodiode substrate
    1.
    发明授权
    High resolution continuously distributed silicon photodiode substrate 失效
    高分辨率连续分布硅光电二极管基板

    公开(公告)号:US4198647A

    公开(公告)日:1980-04-15

    申请号:US4107

    申请日:1979-01-17

    IPC分类号: G02F1/135 H01L27/14

    CPC分类号: G02F1/1354

    摘要: This invention is directed to a semiconductor structure that includes at least one wafer that is fully depleted of all mobile carriers and is used as a medium for the movement of spatially modulated signal represented by charge carriers through the wafer with a spatial resolution that is smaller than the thickness of the wafer. This may be used in the form of a continuous high resolution silicon photodiode substrate to serve as an image input means for an electro-optical display medium, such as a liquid crystal. Next to the photoactivated substrate is a liquid crystal and next to the crystal is a transparent electrode. The photodiode is reverse biased and both of its sides are depleted of all mobile charges throughout its entire thickness. Thus, charges generated in the substrate move to the display not by diffusion as in prior art devices (e.g. the solid state silicon vidicon) but by the influence of the electric field which tends to minimize their lateral spread and thereby achieves a high spatial resolution in spite of the continuous character of this silicon diode device.

    摘要翻译: 本发明涉及一种半导体结构,该半导体结构包括至少一个完全耗尽所有移动载波的晶片,并且用作用于通过晶片以空间分辨率移动由电荷载体表示的空间调制信号的介质,其空间分辨率小于 晶片的厚度。 这可以以连续的高分辨率硅光电二极管基板的形式使用,以用作诸如液晶的电光显示介质的图像输入装置。 在光活化基板的旁边是液晶,并且在晶体旁边是透明电极。 光电二极管是反向偏置的,并且其两侧在整个厚度上都耗尽所有移动电荷。 因此,在现有技术的装置(例如,固态硅摄像机)中,在衬底中产生的电荷不会像扩散一样移动到显示器上,而是通过电场的影响,使得它们的横向扩展趋于最小化,从而实现高空间分辨率 尽管这种硅二极管器件具有连续的特性。

    Cermet interface for electro-optical devices
    2.
    发明授权
    Cermet interface for electro-optical devices 失效
    用于电光器件的金属陶瓷接口

    公开(公告)号:US4093357A

    公开(公告)日:1978-06-06

    申请号:US784894

    申请日:1977-04-05

    IPC分类号: G02F1/135 G02F1/153 G02F1/13

    摘要: There is disclosed an anisotropically conductive interface comprising a plurality of cermet and dielectric layers for use in electro-optical devices to separate a substrate driver from an electro-optical display medium to prevent display light from affecting the driver. The substrate may be a photosensor, a charge coupled device or other matrix addressing circuitry arrangement. In general the substrate is one which can provide spatially modulated voltage and/or current patterns. The display medium may be a liquid crystal, an electro-chromic, an electro-luminescent material or the like. The interface provides direct current conductivity through the interface, insulative maintenance of the spatial modulation of the signal across the interface, light reflectivity, and high attenuation of transmitted light.

    摘要翻译: 公开了一种各向异性导电界面,其包括用于电光装置的多个金属陶瓷和电介质层,以将基板驱动器与电光显示介质分离,以防止显示光影响驱动器。 衬底可以是光电传感器,电荷耦合器件或其他矩阵寻址电路装置。 通常,衬底是可以提供空间调制的电压和/或电流图案的衬底。 显示介质可以是液晶,电致铬,电致发光材料等。 该接口通过接口提供直流电导率,绝缘维持跨越接口的信号的空间调制,光反射率和透射光的高衰减。

    Silicon single crystal charge storage diode
    3.
    发明授权
    Silicon single crystal charge storage diode 失效
    硅单晶充电储能二极管

    公开(公告)号:US4032954A

    公开(公告)日:1977-06-28

    申请号:US691652

    申请日:1976-06-01

    IPC分类号: G02F1/135 H01L27/14

    CPC分类号: G02F1/1354

    摘要: There is disclosed a silver doped silicon single crystal charge storage photodiode substrate suitable for use in an alternating current driven liquid crystal light valve. The gain capability of the charge storage photodiode makes it possible to construct a single crystal substrate ac light valve very similar in structure to that presently being used with a cadmium sulphide photodiode, but having improved operating characteristics and benefitting from a more fully developed manufacturing technology for silicon devices. One specific embodiment of such a single crystal substrate is a silicon substrate doped with a slow recombination center element such as silver.

    Electron beam addressed liquid crystal light valve
    4.
    发明授权
    Electron beam addressed liquid crystal light valve 失效
    电子束寻址液晶光阀

    公开(公告)号:US4728174A

    公开(公告)日:1988-03-01

    申请号:US927580

    申请日:1986-11-06

    CPC分类号: G02F1/133348

    摘要: An electron beam addressed crystal light valve (LCLV) produces an AC voltage across a liquid crystal layer from a single polarity electron beam, and exhibits very high resolution. A mirror and a thin layer of partially conductive material are deposited on a support membrane on the electron beam side of the liquid crystal. The partially conductive layer is divided into a series of pixel elements by a conductive matrix which faces the electron beam. Electrons from the beam are absorbed by the partially conductive layer to establish a negative voltage across the liquid crystal, and then flow out to the conductive matrix to produce an AC voltage prior to the next electron beam scan. The conductive matrix is connected in circuit with a transparent electrode which provides a voltage reference on the readout side of the liquid crystal. The elements of the device are designed with electrical parameters that produce a discharge rate from the partially conductive layer fast enough to complete an AC cycle between successive electron beam scans, but slow enough for the liquid crystal to respond and produce an image.

    摘要翻译: 电子束寻址晶体光阀(LCLV)从单极性电子束产生跨液晶层的交流电压,表现出非常高的分辨率。 在液晶的电子束侧的支撑膜上沉积有反射镜和薄层的部分导电材料。 部分导电层通过面向电子束的导电矩阵分成一系列像素元件。 来自光束的电子被部分导电层吸收,以在液晶两端建立负电压,然后在下一个电子束扫描之前流出到导电矩阵以产生交流电压。 导电矩阵与在液晶的读出侧提供电压基准的透明电极连接在一起。 器件的元件设计有电气参数,其从部分导电层产生放电速率足够快以在连续的电子束扫描之间完成AC循环,但是足够慢以使液晶响应并产生图像。

    Visible-to-infrared converter light valve
    5.
    发明授权
    Visible-to-infrared converter light valve 失效
    可见红外线转换器光阀

    公开(公告)号:US4114991A

    公开(公告)日:1978-09-19

    申请号:US753253

    申请日:1976-12-22

    IPC分类号: G02F1/135 G02F1/13

    CPC分类号: G02F1/135

    摘要: There is disclosed a reflective type liquid crystal light valve means for converting a visible wavelength dynamic image to an infrared wavelength dynamic image. The device employs an infrared reflecting and visible transmitting indium-tin-oxide film which is external to the liquid crystal layer and active films and which also serves as a conductive electrode for the device. In operation, a visible image is transmitted through a visible transmitting faceplate and through this ITO film to a photosensor to modify its impedance. An infrared projection beam is transmitted through a second infrared transmissive faceplate, through the liquid crystal means and the photosensor to the IR reflective dichroic film and thence back through the rest of the liquid crystal cell for projection.

    摘要翻译: 公开了一种用于将可见波长动态图像转换为红外波长动态图像的反射型液晶光阀装置。 该器件采用在液晶层和有源膜外部的红外反射和可见透射的铟锡氧化物膜,并且还用作器件的导电电极。 在操作中,可视图像通过可见的透射面板传输并通过该ITO膜传输到光电传感器以修改其阻抗。 红外投射光束通过第二红外透射面板透过液晶装置和光电传感器传输到红外反射二向色膜,然后通过液晶单元的其余部分反射投影。

    Method of and apparatus for a multimode image display with a liquid
crystal light valve
    7.
    发明授权
    Method of and apparatus for a multimode image display with a liquid crystal light valve 失效
    具有液晶光阀的多模式图像显示方法和装置

    公开(公告)号:US4378955A

    公开(公告)日:1983-04-05

    申请号:US279283

    申请日:1981-06-30

    IPC分类号: G02F1/139 G02F1/29 G02F1/133

    摘要: Method of and apparatus for operating an image display system using a hybrid field effect liquid crystal light valve of the type wherein the molecules of the nematic liquid crystal layer are helically twisted through an acute angle. A polarized projection beam is oriented with its polarization direction within the acute twist angle and applied to a reflective face of the light valve. A writing light input image is applied to a photoresponsive opposite face in order to modulate the reflected projection beam. An electric field applied across the light valve is adjusted between two levels to produce either a simultaneous display of multicolor symbology and achromatic (black-white) gray scale images or a separate display of either one of them.

    摘要翻译: 使用这种类型的混合场效应液晶光阀操作图像显示系统的方法和装置,其中向列型液晶层的分子以锐角螺旋扭转。 偏振投影光束以其偏振方向定向在锐角内,并施加到光阀的反射面。 将书写光输入图像应用于光响应的相对面,以便调制反射的投射光束。 跨越光阀施加的电场在两个水平之间进行调整,以产生多色符号系统和消色差(黑白)灰度图像的同时显示或其中任一个的单独显示。

    Liquid crystal light valve
    9.
    发明授权
    Liquid crystal light valve 失效
    液晶光阀

    公开(公告)号:US4343535A

    公开(公告)日:1982-08-10

    申请号:US103683

    申请日:1979-12-14

    IPC分类号: H04N9/31 G02F1/135

    CPC分类号: H04N9/3167 Y10S359/90

    摘要: Method of and apparatus for operating an electro-optical system for producing high quality images from a liquid crystal light valve.A polarized projection beam is directed to the reflective surface of a liquid crystal light valve for polarization modulation by means of an input image. The beam is polarization analyzed to thereby generate an output image which typically suffers from color and brightness defects caused by economically unavoidable tolerance variations in the electro-optical system. A second beam of light is generated having a light of a selected color different from the projection beam, is spatially varied in intensity by a spatially graded filter, and super-imposed on the output image so as to eliminate the color and brightness defects as well as enhance color contrast and brightness of the image. The color of the second beam is selected so as to mask background color variations and improve color contrast on the output image while the graded intensity filter is selected to additively compensate for background brightness variation of the output image.

    摘要翻译: 用于从液晶光阀产生高质量图像的电光系统的操作方法和装置。 偏振投影光束通过输入图像被引导到用于偏振调制的液晶光阀的反射表面。 对光束进行偏振分析,从而产生通常遭受由电光学系统中经济上不可避免的容差变化引起的颜色和亮度缺陷的输出图像。 产生具有与投影光束不同的所选颜色的光的第二光束,通过空间梯度滤光器在空间上空间变化,并且超强加在输出图像上,以便消除颜色和亮度缺陷 作为增强图像的颜色对比度和亮度。 选择第二光束的颜色以掩蔽背景颜色变化并改善输出图像上的颜色对比度,同时选择渐变强度滤光器以对输出图像的背景亮度变化进行相加补偿。

    Charge storage diode with graded defect density photocapacitive layer
    10.
    发明授权
    Charge storage diode with graded defect density photocapacitive layer 失效
    具有分级缺陷密度光电层的电荷存储二极管

    公开(公告)号:US3976361A

    公开(公告)日:1976-08-24

    申请号:US625331

    申请日:1975-10-22

    CPC分类号: H01L31/109 G02F1/1354

    摘要: In a light actuated device such as an alternating current driven light valve or other display device requiring the photocapacitance of a light responsive layer in a photodiode to be modulated in response to changes in incident or writing light, sensitivity is an important factor, especially when a cathode ray tube phosphor image is the source of such light. This sensitivity can be improved by more than an order of magnitude by using a graded defect center (as defined hereinbelow) concentration, graded band gap layer in said diode which can produce a graded optical absorption coefficient between two regions of the layer so that most of the incident light is absorbed in the region near the semiconductor rectifying junction of the diode to store charge near this junction by this or any similar action. In one particular embodiment disclosed a cadmium sulfide photoconductor is used and the defect center density and hence the optical absorption coefficient for the incident light beam in the light sensitive region is graded from a low value on the light input side to a higher value near the junction forming interface with a cadmium telluride light blocking layer by varying the defect concentration in the cadmium sulfide during the film preparation by progressively lowering the temperature during sputter deposition. In a second embodiment this grading is accomplished by alloying cadmium sulfide with cadmium selenide near the cadmium telluride region thus introducing defect centers and lowering the absorption band edge. In both embodiments charge carriers are generated which are stored in the region adjacent to the junction interface and thereby change the photocapacitive depletion width adjacent to the junction to enhance the sensitivity of the diode.

    摘要翻译: 在诸如交流驱动光阀或其他显示装置的光致启动装置中,响应于入射或写入光的变化而需要调制的光电二极管中的光响应层的光电容,灵敏度是重要的因素,特别是当 阴极射线管荧光图像是这种光源。 通过使用所述二极管中的渐变缺陷中心(如下文所定义)浓度梯度带隙层,可以使该灵敏度提高超过一个数量级,其可以在该层的两个区域之间产生渐变光吸收系数,使得大部分 入射光被吸收在二极管的半导体整流结附近的区域中,以通过这种或任何相似的作用存储在该结附近的电荷。 在公开的一个具体实施方案中,使用了硫化镉光电导体,并且光敏区域中的入射光束的缺陷中心密度以及因此的光学吸收系数从光输入侧的低值分级到接近接近处的较高值 通过在溅射沉积期间逐渐降低温度来改变膜制备期间硫化镉中的缺陷浓度,从而与碲化镉遮光层形成界面。 在第二个实施例中,这种分级是通过将镉硫化镉与碲化镉区附近的硒化镉合金化而实现的,从而引入缺陷中心并降低吸收带边缘。 在两个实施例中,产生电荷载体,其存储在与接合界面相邻的区域中,从而改变邻近结的光电荷耗尽宽度,以增强二极管的灵敏度。