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公开(公告)号：US08415194B2
公开(公告)日：2013-04-09
申请号：US12926943
申请日：2010-12-20
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
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公开(公告)号：US20110097841A1
公开(公告)日：2011-04-28
申请号：US12926943
申请日：2010-12-20
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
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3.发明授权Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权用于光电器件如CIGS / CIS光伏器件的后电极结构及其制造方法公开(公告)号：US07875945B2
公开(公告)日：2011-01-25
申请号：US12149919
申请日：2008-05-09
IPC分类号： H01L31/0232
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
摘要翻译： 一种光电器件，包括也可用作后反射器的后电极。 在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置 基质。 换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。 在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。 在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。
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4.发明申请Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权用于光电器件如CIGS / CIS光伏器件的后电极结构及其制造方法公开(公告)号：US20090020157A1
公开(公告)日：2009-01-22
申请号：US12149919
申请日：2008-05-09
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
摘要翻译： 一种光电器件，包括也可用作后反射器的后电极。 在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置 基质。 换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。 在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。 在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。
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5.发明授权Light scattering coating for greenhouse applications, and/or coated article including the same 有权用于温室应用的光散射涂层和/或包括其的涂层制品公开(公告)号：US09499436B2
公开(公告)日：2016-11-22
申请号：US13064600
申请日：2011-04-01
CPC分类号： G02B1/10 , A01G9/14 , A01G9/1438 , C03C15/00 , C03C17/23 , C03C17/3417 , C03C2218/32 , F24S50/80 , F24S80/52 , G02B1/115 , G02B5/021 , G02B5/0268 , G02B5/0278 , Y02A40/252 , Y10T428/24355
摘要： Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.
摘要翻译： 某些示例实施例涉及设置在用于温室应用的基板上的日光散射薄膜涂层。 涂层的表面形态促进了更好和更均匀的光分布。 例如，设置在基板上的至少一个薄膜层可以被纹理化，以便产生大约0.1-5微米的表面特征，其中表面特征的尺寸使得（a）波长大于 或等于大约800nm入射到其上以主要散射到相对于衬底的主表面小于30度的角度，以及（b）入射到其上的波长小于或等于约700nm的光主要散射到更大的角度 相对于基材的主表面超过20度。 这种布置可以有利地将有利的光引向植物生命，同时将寄生光引导远离植物的寿命。
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6.发明申请Light scattering coating for greenhouse applications, and/or coated article including the same 有权用于温室应用的光散射涂层和/或包括其的涂层制品公开(公告)号：US20120251773A1
公开(公告)日：2012-10-04
申请号：US13064600
申请日：2011-04-01
CPC分类号： G02B1/10 , A01G9/14 , A01G9/1438 , C03C15/00 , C03C17/23 , C03C17/3417 , C03C2218/32 , F24S50/80 , F24S80/52 , G02B1/115 , G02B5/021 , G02B5/0268 , G02B5/0278 , Y02A40/252 , Y10T428/24355
摘要： Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.
摘要翻译： 某些示例实施例涉及设置在用于温室应用的基板上的日光散射薄膜涂层。 涂层的表面形态促进了更好和更均匀的光分布。 例如，设置在基板上的至少一个薄膜层可以被纹理化，以便产生大约0.1-5微米的表面特征，其中表面特征的尺寸使得（a）波长大于 或等于大约800nm入射到其上以主要散射到相对于衬底的主表面小于30度的角度，以及（b）入射到其上的具有小于或等于约700nm的波长的光，以主要散射到更大的角度 相对于基材的主表面超过20度。 这种布置可以有利地将有利的光引向植物生命，同时将寄生光引导远离植物的寿命。
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7.发明授权Apparatus and method for making sputtered films with reduced stress asymmetry 有权制备具有减小的应力不对称的溅射膜的装置和方法公开(公告)号：US09567666B2
公开(公告)日：2017-02-14
申请号：US12318919
申请日：2009-01-12
CPC分类号： C23C14/3407 , C23C14/54 , H01J37/3408 , H01J37/3447
摘要： Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.
摘要翻译： 本发明的某些示例性实施例涉及用于减少溅射多晶膜中的应力不对称性的技术。 在某些示例性实施例中，提供包括一个或多个基本上垂直的非导电屏蔽的溅射装置，其中这种屏蔽件有助于减少溅射材料焊剂的倾斜分量，从而促进更对称的微晶的生长 。 在某些示例性实施例中，溅射膜的行进方向拉伸应力和交叉涂层机拉伸应力之间的差异优选小于约15％，更优选小于约10％，还更优选小于约5％。
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8.发明申请Apparatus and method for making sputtered films with reduced stress asymmetry 有权制备具有减小的应力不对称的溅射膜的装置和方法公开(公告)号：US20100175988A1
公开(公告)日：2010-07-15
申请号：US12318919
申请日：2009-01-12
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/54 , H01J37/3408 , H01J37/3447
摘要： Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.
摘要翻译： 本发明的某些示例性实施例涉及用于减少溅射多晶膜中的应力不对称性的技术。 在某些示例性实施例中，提供包括一个或多个基本上垂直的非导电屏蔽的溅射装置，其中这种屏蔽件有助于减少溅射材料焊剂的倾斜分量，从而促进更对称的微晶的生长 。 在某些示例性实施例中，溅射膜的行进方向拉伸应力和交叉涂层机拉伸应力之间的差异优选小于约15％，更优选小于约10％，还更优选小于约5％。
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9.发明申请Front electrode having etched surface for use in photovoltaic device and method of making same 审中-公开具有用于光伏器件的蚀刻表面的前电极及其制造方法公开(公告)号：US20090194155A1
公开(公告)日：2009-08-06
申请号：US12068119
申请日：2008-02-01
CPC分类号： H01L31/022466 , H01L31/0236 , H01L31/1884 , Y02E10/50
摘要： Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. In certain example embodiments, the front electrode is formed on a flat or substantially flat (non-textured) surface of a glass substrate (e.g., via sputtering), and the surface of the front electrode is textured (e.g., via etching). In completing manufacture of the PV device, the etched surface of the front electrode faces the active semiconductor film of the PV device.
摘要翻译： 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏（PV）装置及其制造方法。 在某些示例性实施例中，前电极具有面向PV器件的光电半导体膜的有纹理（例如蚀刻）的表面。 在某些示例性实施例中，前电极形成在玻璃基板（例如，通过溅射）的平坦或基本上平坦的（非纹理的）表面上，并且前电极的表面是有纹理的（例如通过蚀刻）。 在完成PV器件的制造中，前电极的蚀刻表面面对PV器件的有源半导体膜。
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10.发明授权Back contact for photovoltaic devices such as copper-indium-diselenide solar cells 有权光伏器件如铜铟二硒化物太阳能电池的背接触公开(公告)号：US09246025B2
公开(公告)日：2016-01-26
申请号：US13455232
申请日：2012-04-25
申请人： Alexey Krasnov , Willem den Boer
发明人： Alexey Krasnov , Willem den Boer
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). The first conductive layer of or including copper is located between at least the rear substrate and the second conductive layer of or including molybdenum, and wherein the semiconductor absorber film is located between at least the back contact and the front substrate.
摘要翻译： 光电器件（例如，太阳能电池）包括：前基板（例如玻璃基板）; 半导体吸收膜; 包括铜（Cu）的第一导电层或包括或包括钼（Mo）的第二导电层的背接触; 和背面基板（例如，玻璃基板）。 或包括铜的第一导电层位于至少后基板和包括钼的第二导电层之间，并且其中半导体吸收膜位于至少后接触件和前基板之间。
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