公开(公告)号：US4029965A

公开(公告)日：1977-06-14

申请号：US660728

申请日：1976-02-23

申请人： Allan Ivan Carlson ,  Barry M. Singer

发明人： Allan Ivan Carlson ,  Barry M. Singer

IPC分类号： H01J29/44 ,  H01J31/36 ,  G01T1/22

CPC分类号： H01J31/36 ,  H01J29/44

摘要： X-ray image intensifier tube comprises a silicon diode array imaging target which, on the electron bombarded side, is provided with a deeply diffused phosphorus n.sup.+ layer covered with a metallic buffer layer.

摘要翻译： X射线图像增强管包括硅二极管阵列成像靶，其在电子轰击侧上设置有被金属缓冲层覆盖的深度扩散的磷n +层。

公开(公告)号：US4019084A

公开(公告)日：1977-04-19

申请号：US618768

申请日：1975-10-02

申请人： Thomas H. Conklin ,  Barry M. Singer

发明人： Thomas H. Conklin ,  Barry M. Singer

IPC分类号： H01J29/45 ,  H01J31/00

CPC分类号： H01J29/458

摘要： In a pyroelectric vidicon, the target is covered with a layer of vacuum compatible material which has a high secondary emission coefficient, a low first cross-over and low conductivity to prevent decomposition of the target.

摘要翻译： 在热电摄像机中，目标被一层真空相容的材料覆盖，其具有高的二次发射系数，低的第一交叉和低电导率，以防止靶分解。

公开(公告)号：US4485392A

公开(公告)日：1984-11-27

申请号：US334997

申请日：1981-12-28

申请人： Barry M. Singer

发明人： Barry M. Singer

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L21/74 ,  H01L29/06 ,  H01L29/10 ,  H01L29/808 ,  H01L29/40 ,  H01L29/78 ,  H01L29/90

CPC分类号： H01L29/808 ,  H01L21/74 ,  H01L29/0619 ,  H01L29/1029

摘要： A lateral junction field effect transister device includes both a surface semiconductor layer located between the gate and drain contact regions of the device and a buried semiconductor layer which extends beneath at least the drain contact region and the surface semiconductor layer of the device. The buried layer may be in the form of a continuous layer extending beneath the gate, source, and drain contact regions of the device as well as the surface semiconductor layer, or it may be provided in annular form with an aperture beneath the source and gate regions. The annular central buried layer configuration may further include an additional buried layer portion extending beneath the source region of the device. Devices having buried and surface layers in accordance with the invention feature improved high-voltage breakdown characteristics, enhanced conductivity in the "on" state, and the ability to operate in the source-follower mode.

摘要翻译： 横向结型场效应转移器装置包括位于器件的栅极和漏极接触区域之间的表面半导体层以及在器件的至少漏极接触区域和表面半导体层下面延伸的掩埋半导体层。 掩埋层可以是在器件的栅极，源极和漏极接触区域下面延伸的连续层的形式以及表面半导体层，或者可以以环形形式提供在源极和栅极下方的孔 地区。 环形中心掩埋层构造还可以包括在器件的源极区域下方延伸的附加掩埋层部分。 具有根据本发明的掩埋层和表面层的器件具有改进的高压击穿特性，在“接通”状态下增强的导电性以及在源跟随器模式下操作的能力。

公开(公告)号：US4437118A

公开(公告)日：1984-03-13

申请号：US175477

申请日：1980-08-05

申请人： Barry M. Singer

发明人： Barry M. Singer

IPC分类号： H01J29/45 ,  H01J31/49 ,  H04N5/33

CPC分类号： H01J29/458 ,  H01J31/49

摘要： A pyroelectric vidicon has an improved signal-to-noise ratio by essentially eliminating pedestal noise and using signal gain to overcome preamplifier noise. Pedestal noise is substantially eliminated by charging the target, during the flyback read period, down to a small fixed value above the quiescent value. This is accomplished by setting the cathode potential, during the flyback read period, at a value below the reference value. The time duration of the flyback read period is such that the target is charged down to a value which is still above the quiescent value.

摘要翻译： 热电视频通过基本上消除基座噪声并使用信号增益来克服前置放大器噪声具有改善的信噪比。 通过在反激读取期间对目标进行充电，基本上消除了基座噪声，降至高于静态值的小固定值。 这是通过将反激读取期间的阴极电位设置在低于参考值的值来实现的。 回扫读取期间的持续时间使得目标被充电到仍高于静态值的值。

公开(公告)号：US5243214A

公开(公告)日：1993-09-07

申请号：US868746

申请日：1992-04-14

申请人： Johnny K. O. Sin ,  Barry M. Singer ,  Satyendranath Mukherjee

发明人： Johnny K. O. Sin ,  Barry M. Singer ,  Satyendranath Mukherjee

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/092

CPC分类号： H01L27/0921 ,  H01L27/0248

摘要： A power integrated circuit includes a substrate with an overlying epitaxial surface layer of opposite conductivity type. A semiconductor power device, such as a high-power diode or lateral MOS transistor, is located in the epitaxial layer and forms a p-n junction diode with the substrate. The power integrated circuit also includes a separate semiconductor well region in the epitaxial layer, in which one or more low-power semiconductor circuit elements are formed. In order to minimize the problem of latch up in the low-power circuit elements due to the injection of minority carriers from the substrate, the power integrated circuit is provided with a collector region and an isolation region between the power device and the well region having the low-power circuit elements.

公开(公告)号：US4203106A

公开(公告)日：1980-05-13

申请号：US854117

申请日：1977-11-23

申请人： Andrew L. Dalisa ,  Barry M. Singer

发明人： Andrew L. Dalisa ,  Barry M. Singer

IPC分类号： G09F9/30 ,  G02F1/167 ,  G09F9/37 ,  G09G3/34 ,  G09F9/32

CPC分类号： G09G3/3446 ,  G02F1/167 ,  G09G2300/06 ,  G09G2310/06

摘要： An electrophoretic display device in which an colloidal suspension of pigment particles is contained between a pair of electrodes, and means are provided in the structure of the electrodes of the cell for the establishment of a voltage threshold for the transport of pigment particles. This threshold permits the changing of the spatial distribution of pigment particles in specifically defined regions of the display cell.

摘要翻译： 一种电泳显示装置，其中颜料颗粒的胶体悬浮液包含在一对电极之间，并且在电池的电极的结构中提供了用于建立颜料颗粒运输的电压阈值的装置。 该阈值允许改变显示单元的特定区域中的颜料颗粒的空间分布。

公开(公告)号：US4018638A

公开(公告)日：1977-04-19

申请号：US606967

申请日：1975-08-22

申请人： Barry M. Singer ,  Joseph J. Lalak

发明人： Barry M. Singer ,  Joseph J. Lalak

IPC分类号： C23F1/02

CPC分类号： H01J9/233

摘要： A method of reducing the thickness of a wafer of fragile material, e.g. pyroelectric material, by placing the wafer, supported only at its rim, in a holder filled with a non-corrosive liquid. The holder with the exposed surface of wafer is placed in an etch bath to reduce the thickness of the wafer. The wafer is removed from the etch bath, without removing it from the holder, to measure its thickness, using its index of refraction, which is facilitated by the presence of a bubble in the non-corrosive liquid.

摘要翻译： 一种减小脆性材料晶片的厚度的方法，例如， 热电材料，通过将仅支撑在其边缘的晶片放置在填充有非腐蚀性液体的保持器中。 将具有晶片的暴露表面的保持器放置在蚀刻槽中以减小晶片的厚度。 将晶片从蚀刻槽中取出，而不用将其从保持器中取出，以便使用其折射率来测量其厚度，这通过在非腐蚀性液体中存在气泡而促进。

公开(公告)号：US4906897A

公开(公告)日：1990-03-06

申请号：US124388

申请日：1971-03-15

申请人： Barry M. Singer ,  Amos Picker

发明人： Barry M. Singer ,  Amos Picker

IPC分类号： H01J29/38 ,  H01J31/50

CPC分类号： H01J29/385 ,  H01J31/50 ,  H01J2231/50026 ,  H01J2231/50063

摘要： An image intensifier tube comprising an input screen assembly which includes a photosensitive semiconductor wafer having a substrate of one conductivity type material forming a plurality of P-N junctions with a planar array of mutually isolated islands of opposite conductivity type material, the islands protruding substantially equal distances from a common surface of the substrate, an opaque film of resistive material overlying the exposed areas of the islands and the common surface of the substrate, a layer of electroluminescent material disposed in abutting relationship with the distal ends of the islands and a layer of photoemissive material disposed in axially aligned relationship with the electroluminescent layer.

摘要翻译： 一种图像增强管，包括输入屏幕组件，该输入屏幕组件包括光敏半导体晶片，该光敏半导体晶片具有一个导电类型材料的基板，该基板形成具有相互隔离的相反导电类型材料岛的平面阵列的多个PN结， 衬底的公共表面，覆盖岛的暴露区域和衬底的共同表面的电阻材料的不透明膜，与岛的远端邻接关系设置的电致发光材料层和发光材料层 与电致发光层轴向对准的关系。

公开(公告)号：US4639761A

公开(公告)日：1987-01-27

申请号：US792221

申请日：1985-10-25

申请人： Barry M. Singer ,  Rajsekhar Jayaraman

发明人： Barry M. Singer ,  Rajsekhar Jayaraman

IPC分类号： H01L21/74 ,  H01L27/07 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L27/02 ,  H01L29/90 ,  H01L29/00

CPC分类号： H01L29/7816 ,  H01L21/74 ,  H01L27/0716 ,  H01L29/0619 ,  H01L29/0847 ,  H01L29/1083 ,  Y10S257/901

摘要： A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. The doping concentration and thickness of the epitaxial surface layer are selected in accordance with the Reduced Surface Field (RESURF) technique. A highly-doped buried region of the second conductivity type is located beneath the base region of the device and is sandwiched between the epitaxial buried layer and the epitaxial surface layer. The advantages of such a device include a substantially reduced "on" resistance, a more compact and flexible configuration, improved switching characteristics, reduced base device current requirements, and improved isolation. The device may be further enhanced by providing a buried annular region of the first conductivity type around and in contact with the buried region, and a surface-adjoining annular region of the first conductivity may be provided adjacent the base region.

摘要翻译： 组合双极场效应晶体管RESURF器件包括位于第一导电类型的半导体衬底与第一导电类型的第二导电类型的外延表面层与第一导电类型相反的第一导电类型的轻掺杂外延掩埋层。 根据减少表面场（RESURF）技术选择外延表面层的掺杂浓度和厚度。 第二导电类型的高掺杂掩埋区域位于器件的基极区域的下方并夹在外延掩埋层和外延表面层之间。 这种器件的优点包括显着降低的“导通”电阻，更紧凑和灵活的配置，改进的开关特性，降低的基极器件电流要求以及改进的隔离。 可以通过在掩埋区域周围提供第一导电类型的掩埋环形区域并且与掩埋区域接触来进一步增强该器件，并且可以在基极区域附近提供与第一导电性的表面相邻的环形区域。

公开(公告)号：US4609929A

公开(公告)日：1986-09-02

申请号：US684442

申请日：1984-12-21

申请人： Raj Jayaraman ,  Barry M. Singer

发明人： Raj Jayaraman ,  Barry M. Singer

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/07 ,  H01L29/10 ,  H01L29/73 ,  H01L29/735 ,  H01L29/739 ,  H01L29/78 ,  H01L27/04 ,  H01L29/72

CPC分类号： H01L29/7816 ,  H01L27/0716 ,  H01L29/1087 ,  H01L29/735 ,  H01L29/7801 ,  H01L29/739 ,  Y10S257/901

摘要： A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a floating semiconductor layer of opposite conductivity type to that of the channel region is provided between the intermediate layer and the substrate of the device. Both the intermediate layer and the substrate are relatively lightly doped, to effectively isolate the floating layer from above and below. This structure substantially improves the operating chartacteristics of the device, thus permitting operation in both the source-follower and common-source modes, while also providing a compact structure which features a relatively low normalized "on" resistance.

摘要翻译： 组合的横向MOS /双极晶体管包括与沟道区相同的导电类型的中间半导体层，该沟道区从沟道区域横向延伸到器件的漏极接触区域的下方。 此外，在器件的中间层和衬底之间设置与沟道区相反的导电类型的浮动半导体层。 中间层和衬底都相对轻掺杂，以有效地将浮层从上下分离。 该结构大大改善了器件的工作特性，从而允许在源极跟随器和共源模式两者中工作，同时还提供具有相对低的标准化“导通”电阻的紧凑结构。