公开(公告)号：US20240084479A1

公开(公告)日：2024-03-14

申请号：US18261893

申请日：2022-01-19

申请人： Alliance for Sustainable Energy, LLC

发明人： Kevin Louis SCHULTE ,  John David SIMON ,  Aaron Joseph PTAK

IPC分类号： C30B25/18 ,  C30B25/16 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B25/16 ,  C30B29/40

摘要： Described herein are devices and methods related to compositionally graded buffers (CGB) and methods and/or systems for producing CGBs. CGBs enable the growth of high quality materials that are lattice mismatched to a substrate. More specifically, the present disclosure relates to methods for making CGBs by hydride vapor phase epitaxy (HVPE). HVPE methods using a single chamber for producing a CGB may result in a transience in the CGB layers as the flows supplying the reactants are switched to produce the next subsequent layer in the CGB. In contrast to this static style of grading, the present disclosure describes a dynamic method for producing CGBs, in which multiple growth chambers are utilized.

公开(公告)号：US20210143297A1

公开(公告)日：2021-05-13

申请号：US17122161

申请日：2020-12-15

申请人： Alliance for Sustainable Energy, LLC

发明人： Kevin Louis SCHULTE ,  Aaron Joseph PTAK ,  John David SIMON

IPC分类号： H01L31/18 ,  C30B25/02 ,  C23C16/30 ,  C30B29/42 ,  C30B25/14 ,  C30B29/40 ,  C30B25/16

摘要： Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

公开(公告)号：US20240274746A1

公开(公告)日：2024-08-15

申请号：US18566764

申请日：2022-06-06

申请人： Alliance for Sustainable Energy, LLC

发明人： Kevin Louis SCHULTE ,  Wondwosen Tilahun METAFERIA ,  Aaron Joseph PTAK ,  John David SIMON

IPC分类号： H01L31/18 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/42 ,  H01L31/0735

CPC分类号： H01L31/1844 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/42 ,  H01L31/0735

摘要： Disclosed herein are methods for the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting.

公开(公告)号：US20230062711A1

公开(公告)日：2023-03-02

申请号：US17754503

申请日：2020-10-01

申请人： Alliance for Sustainable Energy, LLC

发明人： Wondwosen Tilahun METAFERIA ,  Kevin Louis SCHULTE ,  Aaron Joseph PTAK ,  John David SIMON

IPC分类号： C30B25/14 ,  H01L21/02 ,  C30B29/40

摘要： Disclosed herein is the controlled epitaxy of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator.