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    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
    2.
    发明申请
    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 审中-公开
    用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统

    公开(公告)号：US20050036244A1

    公开(公告)日：2005-02-17

    申请号：US10951397

    申请日：2004-09-27

    申请人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    发明人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

    摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

    摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
    5.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性

    公开(公告)号：US20060222112A1

    公开(公告)日：2006-10-05

    申请号：US11096636

    申请日：2005-03-31

    申请人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    IPC分类号： H04L27/06

    CPC分类号： B82Y25/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

    摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
    6.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权
    采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性

    公开(公告)号：US20060221514A1

    公开(公告)日：2006-10-05

    申请号：US11097920

    申请日：2005-03-31

    申请人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/308 ,  H01L43/08

    摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

    摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。