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公开(公告)号：US20240274547A1
公开(公告)日：2024-08-15
申请号：US18642214
申请日：2024-04-22
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/065
CPC分类号： H01L23/552 , H01L21/4853 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/5383 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2924/15192 , H01L2924/15311 , H01L2924/3025
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
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公开(公告)号：US11967567B2
公开(公告)日：2024-04-23
申请号：US18138325
申请日：2023-04-24
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/065
CPC分类号： H01L23/552 , H01L21/4853 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/5383 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2924/15192 , H01L2924/15311 , H01L2924/3025
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
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公开(公告)号：US20230187410A1
公开(公告)日：2023-06-15
申请号：US18105970
申请日：2023-02-06
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/065 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/31
CPC分类号： H01L25/0655 , H01L23/49822 , H01L23/49833 , H01L21/561 , H01L23/5385 , H01L21/563 , H01L23/3128
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220293482A1
公开(公告)日：2022-09-15
申请号：US17555790
申请日：2021-12-20
发明人： Jin Young Khim , Ji Young Chung , Ju Hoon Yoon , Kwang Woong Ahn , Ho Jeong Lim , Tae Yong Lee , Jae Min Bae
IPC分类号： H01L23/31 , H01L23/498 , H01L21/683 , H01L21/768 , H01L23/48 , H01L23/00
摘要： A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.
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公开(公告)号：US20210280484A1
公开(公告)日：2021-09-09
申请号：US17327979
申请日：2021-05-24
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11018067B2
公开(公告)日：2021-05-25
申请号：US16419650
申请日：2019-05-22
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11728280B2
公开(公告)日：2023-08-15
申请号：US17150537
申请日：2021-01-15
发明人： Min Won Park , Tae Yong Lee , Ji Hun Yi , Cheol Ho Lee
IPC分类号： H01L23/552 , H01L23/31 , H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56
CPC分类号： H01L23/552 , H01L21/4853 , H01L21/565 , H01L21/568 , H01L23/3128 , H01L23/5386 , H01L24/19 , H01L24/20 , H01L2224/214 , H01L2924/3025
摘要： In one example, an electronic device includes a substrate comprising a substrate top side, a substrate bottom side, and outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11557524B2
公开(公告)日：2023-01-17
申请号：US17327979
申请日：2021-05-24
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11521918B2
公开(公告)日：2022-12-06
申请号：US16504917
申请日：2019-07-08
发明人： Hyung Jun Cho , Kyoung Yeon Lee , Tae Yong Lee , Jae Min Bae
IPC分类号： H01L23/495 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/498
摘要： In one example, a semiconductor device comprises a substrate and an electronic device on a top side of the substrate, a lead frame on the top side of the substrate over the electronic device, wherein the lead frame comprises a connection bar and a lead, a component mounted to the connection bar and the lead on a top side of the lead frame, and an encapsulant on the top side of the substrate, wherein the encapsulant contacts a side of the electronic device and a side of the component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220005787A1
公开(公告)日：2022-01-06
申请号：US16918074
申请日：2020-07-01
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/065 , H01L23/498 , H01L23/31 , H01L23/538 , H01L21/56
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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