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    Method of erasing a resistive memory device
    1.
    发明授权
    Method of erasing a resistive memory device 有权
    擦除电阻式存储器件的方法

    公开(公告)号：US07916523B2

    公开(公告)日：2011-03-29

    申请号：US11633941

    申请日：2006-12-05

    申请人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    发明人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0071 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79

    摘要： In a first method of erasing a resistive memory device, an electrical potential is applied to the gate of a transistor in series with the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials across the resistive memory device. In a second method of erasing a resistive memory device, an electrical potential is applied across the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials to the gate of a transistor in series with the resistive memory device.

    摘要翻译： 在擦除电阻式存储器件的第一种方法中，将电位施加到与电阻性存储器件串联的晶体管的栅极，并且通过电阻存储器件提供连续增加的电流，通过提供连续增加的电势跨越 电阻式存储器件。 在擦除电阻性存储器件的第二种方法中，电阻被施加在电阻存储器件两端，并且通过电阻存储器件提供连续增加的电流，通过向晶体管的栅极串联提供连续增加的电势， 电阻式存储器件。

    Method of erasing a resistive memory device
    2.
    发明申请
    Method of erasing a resistive memory device 有权
    擦除电阻式存储器件的方法

    公开(公告)号：US20080130392A1

    公开(公告)日：2008-06-05

    申请号：US11633941

    申请日：2006-12-05

    申请人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    发明人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    IPC分类号： G11C7/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0071 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79

    摘要： In a first method of erasing a resistive memory device, an electrical potential is applied to the gate of a transistor in series with the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials across the resistive memory device. In a second method of erasing a resistive memory device, an electrical potential is applied across the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials to the gate of a transistor in series with the resistive memory device.

    摘要翻译： 在擦除电阻式存储器件的第一种方法中，将电位施加到与电阻性存储器件串联的晶体管的栅极，并且通过电阻存储器件提供连续增加的电流，通过提供连续增加的电势跨越 电阻式存储器件。 在擦除电阻性存储器件的第二种方法中，电阻被施加在电阻存储器件两端，并且通过电阻存储器件提供连续增加的电流，通过向晶体管的栅极串联提供连续增加的电势， 电阻式存储器件。

    Resistive memory device with improved data retention
    5.
    发明授权
    Resistive memory device with improved data retention 有权
    具有改善数据保持性的电阻式存储器件

    公开(公告)号：US07286388B1

    公开(公告)日：2007-10-23

    申请号：US11165005

    申请日：2005-06-23

    申请人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang ,  Yi-Ching Jean Wu ,  Colin S. Bill

    发明人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang ,  Yi-Ching Jean Wu ,  Colin S. Bill

    IPC分类号： G11C13/00

    CPC分类号： G11C13/0069 ,  G11C13/02 ,  G11C2013/009 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79

    摘要： In the present method of programming a memory device from an erased state, the memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes. In the programming method, (i) an electrical potential is applied across the first and second electrodes from higher to lower potential in one direction to reduce the resistance of the memory device, and (ii) an electrical potential is applied across the first and second electrodes from higher to lower potential in the other direction to further reduce the resistance of the memory device.

    摘要翻译： 在从擦除状态编程存储器件的本方法中，存储器件包括第一和第二电极，第一和第二电极之间的无源层以及第一和第二电极之间的有源层。 在编程方法中，（i）在一个方向上跨越第一和第二电极施加电位从较高电位到较低的电位，以减小存储器件的电阻，并且（ii）电势跨越第一和第二 电极在另一个方向从较高电位变为较低电位，以进一步降低存储器件的电阻。