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    Resistive memory device with improved data retention and reduced power
    3.
    发明申请
    Resistive memory device with improved data retention and reduced power 审中-公开
    电阻式存储器件，具有改进的数据保持和降低功耗

    公开(公告)号：US20060256608A1

    公开(公告)日：2006-11-16

    申请号：US11126800

    申请日：2005-05-11

    申请人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang

    发明人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0009 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/12 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/56 ,  G11C2213/79

    摘要： Provided herein is method of programming a resistive memory device, the resistive memory device including a first electrode, a second electrode, a passive layer between the first and second electrode, and an active layer between the first and second electrodes. In the programming method, an electrical potential is applied across the first and second electrodes from higher to lower potential in the direction from the active layer to the passive layer so that electronic charge carriers enter the active layer and are held by traps therein. In erasing the memory device, an electrical potential is applied across the first and second electrodes from higher to lower potential in the direction from the passive layer to the active layer so that electronic charge carriers are moved from the active layer.

    摘要翻译： 本文提供了对电阻式存储器件进行编程的方法，该电阻式存储器件包括第一电极，第二电极，第一和第二电极之间的无源层以及第一和第二电极之间的有源层。 在编程方法中，在从有源层到无源层的方向上，跨越第一和第二电极施加电位从较高电位到较低的电位，使得电子载流子进入有源层并由其中的陷阱保持。 在擦除存储器件时，在从无源层到有源层的方向上，跨越第一和第二电极的电势从较高电位施加到较低的电位，使得电子载流子从有源层移动。

    Resistive memory device with improved data retention
    4.
    发明授权
    Resistive memory device with improved data retention 有权
    具有改善数据保持性的电阻式存储器件

    公开(公告)号：US07286388B1

    公开(公告)日：2007-10-23

    申请号：US11165005

    申请日：2005-06-23

    申请人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang ,  Yi-Ching Jean Wu ,  Colin S. Bill

    发明人： An Chen ,  Sameer Haddad ,  Tzu-Ning Fang ,  Yi-Ching Jean Wu ,  Colin S. Bill

    IPC分类号： G11C13/00

    CPC分类号： G11C13/0069 ,  G11C13/02 ,  G11C2013/009 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79

    摘要： In the present method of programming a memory device from an erased state, the memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes. In the programming method, (i) an electrical potential is applied across the first and second electrodes from higher to lower potential in one direction to reduce the resistance of the memory device, and (ii) an electrical potential is applied across the first and second electrodes from higher to lower potential in the other direction to further reduce the resistance of the memory device.

    摘要翻译： 在从擦除状态编程存储器件的本方法中，存储器件包括第一和第二电极，第一和第二电极之间的无源层以及第一和第二电极之间的有源层。 在编程方法中，（i）在一个方向上跨越第一和第二电极施加电位从较高电位到较低的电位，以减小存储器件的电阻，并且（ii）电势跨越第一和第二 电极在另一个方向从较高电位变为较低电位，以进一步降低存储器件的电阻。

    Method of erasing a resistive memory device
    5.
    发明授权
    Method of erasing a resistive memory device 有权
    擦除电阻式存储器件的方法

    公开(公告)号：US07916523B2

    公开(公告)日：2011-03-29

    申请号：US11633941

    申请日：2006-12-05

    申请人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    发明人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0071 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79

    摘要： In a first method of erasing a resistive memory device, an electrical potential is applied to the gate of a transistor in series with the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials across the resistive memory device. In a second method of erasing a resistive memory device, an electrical potential is applied across the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials to the gate of a transistor in series with the resistive memory device.

    摘要翻译： 在擦除电阻式存储器件的第一种方法中，将电位施加到与电阻性存储器件串联的晶体管的栅极，并且通过电阻存储器件提供连续增加的电流，通过提供连续增加的电势跨越 电阻式存储器件。 在擦除电阻性存储器件的第二种方法中，电阻被施加在电阻存储器件两端，并且通过电阻存储器件提供连续增加的电流，通过向晶体管的栅极串联提供连续增加的电势， 电阻式存储器件。

    Method of erasing a resistive memory device
    6.
    发明申请
    Method of erasing a resistive memory device 有权
    擦除电阻式存储器件的方法

    公开(公告)号：US20080130392A1

    公开(公告)日：2008-06-05

    申请号：US11633941

    申请日：2006-12-05

    申请人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    发明人： An Chen ,  Sameer Haddad ,  Yi-Ching Jean Wu ,  Swaroop Kaza

    IPC分类号： G11C7/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0071 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79

    摘要： In a first method of erasing a resistive memory device, an electrical potential is applied to the gate of a transistor in series with the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials across the resistive memory device. In a second method of erasing a resistive memory device, an electrical potential is applied across the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials to the gate of a transistor in series with the resistive memory device.

    摘要翻译： 在擦除电阻式存储器件的第一种方法中，将电位施加到与电阻性存储器件串联的晶体管的栅极，并且通过电阻存储器件提供连续增加的电流，通过提供连续增加的电势跨越 电阻式存储器件。 在擦除电阻性存储器件的第二种方法中，电阻被施加在电阻存储器件两端，并且通过电阻存储器件提供连续增加的电流，通过向晶体管的栅极串联提供连续增加的电势， 电阻式存储器件。