公开(公告)号：US20070250274A1

公开(公告)日：2007-10-25

申请号：US11671956

申请日：2007-02-06

申请人： Andrei Volkov ,  Costa Colbert ,  Ivan Pan ,  Anelia Kraltcheva ,  Mitsu Reddy ,  Nasanshargal Battulga ,  Michael Rea ,  Keun Lee ,  Susan Hardin ,  Brent Mulder ,  Chris Hebel ,  Alok Bandekar

发明人： Andrei Volkov ,  Costa Colbert ,  Ivan Pan ,  Anelia Kraltcheva ,  Mitsu Reddy ,  Nasanshargal Battulga ,  Michael Rea ,  Keun Lee ,  Susan Hardin ,  Brent Mulder ,  Chris Hebel ,  Alok Bandekar

IPC分类号： G01N31/00

CPC分类号： C12Q1/6813 ,  G01N21/6408 ,  G01N21/6456 ,  G01N2021/6439

摘要： A method to be implemented on or in a computer is disclosed, where the method includes data collection, calibration, candidate selection, and analysis of data streams associated with each candidate to classify single molecule fluorescence resonance energy transfer events. Once classified, the classification can be related to the nature of the events, such as the identification of dNTP incorporation during primer extension to obtain a base read out of an unknown template.

摘要翻译： 公开了一种在计算机上或计算机中实现的方法，其中该方法包括与每个候选物相关联的数据流的数据收集，校准，候选选择和分析，以分类单分子荧光共振能量传递事件。 一旦分类，分类可以与事件的性质相关，例如在引物延伸期间鉴定dNTP并入以获得从未知模板读出的碱基。

公开(公告)号：US09997462B2

公开(公告)日：2018-06-12

申请号：US15581782

申请日：2017-04-28

申请人： Jooyeon Ha ,  Jeonggil Lee ,  Dohyung Kim ,  Keun Lee ,  HyunSeok Lim ,  Hauk Han

发明人： Jooyeon Ha ,  Jeonggil Lee ,  Dohyung Kim ,  Keun Lee ,  HyunSeok Lim ,  Hauk Han

IPC分类号： H01L27/115 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/11565 ,  H01L27/11568 ,  H01L29/792 ,  H01L29/788 ,  H01L27/11578

CPC分类号： H01L23/535 ,  H01L23/53266 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.

公开(公告)号：US09112137B2

公开(公告)日：2015-08-18

申请号：US13599489

申请日：2012-08-30

申请人： Jin Hyock Kim ,  Keun Lee ,  Young Seok Kwon

发明人： Jin Hyock Kim ,  Keun Lee ,  Young Seok Kwon

IPC分类号： H01L45/00

CPC分类号： H01L27/2409 ,  H01L29/47 ,  H01L29/872 ,  H01L45/06 ,  H01L45/145 ,  H01L45/1633

摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括其中形成字线区域的半导体衬底和布置在字线区域上并形成肖特基结的势垒金属层。 阻挡金属层包括其中第一材料被硝化的第一氮化物材料和第二材料被硝化的第二氮化物材料。 阻挡金属层由第一氮化物材料和第二氮化物材料的混合物形成。 第一材料或第二材料中的至少一种富含用于形成第一氮化物材料或第二氮化物材料的金属。

公开(公告)号：US08563960B2

公开(公告)日：2013-10-22

申请号：US13331758

申请日：2011-12-20

申请人： Keun Lee

发明人： Keun Lee

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L45/1608 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

摘要： A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.

摘要翻译： 相变随机存取存储器包括在半导体衬底上形成有底电极的半导体衬底; 以及形成在底部电极上的相变层。 所述相变层形成在所述底部电极上并且包括第一元件，第二元件和第三元件中的至少一个的第一相变层; 以及形成在所述第一相变层的表面上并由所述第一元件形成以防止所述第一相变层的面积通过扩散增加的第二相变层。

公开(公告)号：US20070028252A1

公开(公告)日：2007-02-01

申请号：US11435900

申请日：2006-05-18

申请人： Keun Lee ,  Jeung Lee ,  Yong Lee ,  Hong Yim ,  Jae Eum

发明人： Keun Lee ,  Jeung Lee ,  Yong Lee ,  Hong Yim ,  Jae Eum

IPC分类号： G11B17/04

CPC分类号： G11B17/056 ,  G11B17/0405 ,  G11B33/027

摘要： An optical recording and/or playback apparatus in which a disc is prevented from being ejected from the optical recording and playback apparatus during operation of the optical recording and playback apparatus. The optical recording and playback apparatus includes a main body having an entrance, a deck mounted in the main body and having a spindle motor and an optical pickup unit, a tray mounted at the main body such that the tray is inserted into or ejected from the main body through the entrance, a loading unit to insert or eject the tray into or from the main body, and a safety door mounted at the entrance to close the entrance after the tray is inserted into the main body, the safety door being opened and closed according to the operation of the loading unit.

摘要翻译： 一种光学记录和/或播放装置，其中在光学记录和重放装置的操作期间防止光盘从光学记录和重放装置弹出。 光学记录和重放装置包括具有入口的主体，安装在主体中的主体，具有主轴电动机和光学拾取单元，安装在主体上的托盘，使得托盘插入或从其中弹出 主体通过入口，装载单元将托盘插入或弹出主体;以及安全门，安装在入口处，在托盘插入主体之后关闭入口，安全门打开， 根据装载单元的操作关闭。

公开(公告)号：US08508021B2

公开(公告)日：2013-08-13

申请号：US12962183

申请日：2010-12-07

申请人： Keun Lee ,  Jin Hyock Kim ,  Young Seok Kwon

发明人： Keun Lee ,  Jin Hyock Kim ,  Young Seok Kwon

IPC分类号： H01L45/00

CPC分类号： H01L45/1641 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

摘要： A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.

摘要翻译： 提供了具有改进的沉积特性的相变存储器件及其制造方法。 相变存储器件包括具有相变区域的半导体衬底，形成相变区域的内表面的第一富含材料的第一相变层，并且由第一材料的杂化合物和第二材料组成 材料和形成在第一相变层的表面上以填充相变区域的第二相变层。

公开(公告)号：US20130126815A1

公开(公告)日：2013-05-23

申请号：US13599489

申请日：2012-08-30

申请人： Jin Hyock KIM ,  Keun Lee ,  Young Seok Kwon

发明人： Jin Hyock KIM ,  Keun Lee ,  Young Seok Kwon

IPC分类号： H01L45/00

CPC分类号： H01L27/2409 ,  H01L29/47 ,  H01L29/872 ,  H01L45/06 ,  H01L45/145 ,  H01L45/1633

摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

公开(公告)号：US20070145456A1

公开(公告)日：2007-06-28

申请号：US11479444

申请日：2006-06-30

申请人： Keun Lee

发明人： Keun Lee

IPC分类号： H01L29/76

CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521

摘要： A non-volatile memory device includes a semiconductor substrate having an active region defined by isolation films that extend along a first direction. A control gate line extends along in a second direction perpendicular to the first direction. First and second floating gates are formed on the active region and below the control gate line. An island conductive line is formed between the first and second floating gates and within the isolation films. The island conductive line extends along the first direction and is configured to receive a voltage in order to prevent interference between the first and second floating gates.

摘要翻译： 非易失性存储器件包括具有由沿着第一方向延伸的隔离膜限定的有源区的半导体衬底。 控制栅极线沿垂直于第一方向的第二方向延伸。 第一和第二浮栅形成在有源区和控制栅线下方。 岛状导电线形成在第一和第二浮栅之间以及隔离膜内。 岛状导电线沿着第一方向延伸并且被配置为接收电压，以便防止第一和第二浮动栅极之间的干扰。

公开(公告)号：US20070056663A1

公开(公告)日：2007-03-15

申请号：US10830973

申请日：2004-04-22

申请人： Jin Kim ,  Jin Cho ,  Keun Lee ,  Jae Kim

发明人： Jin Kim ,  Jin Cho ,  Keun Lee ,  Jae Kim

IPC分类号： C06B25/00 ,  C07C205/00

CPC分类号： C08G65/22 ,  C07D303/24 ,  C08G65/2609

摘要： Disclosed are novel compounds that can be used as an energetic binder used for improving the performance and the properties of a high explosive, and a preparation method thereof. More specifically, provided are glycidyl dinitropropyl formal of chemical formula IV having a nitro group (—NO2) as an energy group and having no hydrogen bonding to carbon to which the nitro group is binding, poly(glycidyl dinitropropyl formal) of chemical formula V polymerized using the glycidyl dinitropropyl formal as a monomer, and a preparation method thereof.

摘要翻译： 公开了可用作提高高爆炸性能和性能的能量粘合剂的新型化合物及其制备方法。 更具体地，提供具有硝基（-NO 2 2 N）作为能量基并且与硝基结合的碳没有氢键的化学式IV的缩水甘油基二硝基丙基甲醛，聚（缩水甘油基 使用缩水甘油基二硝基丙基甲缩醛作为单体聚合的化学式V的二硝基丙基甲醛及其制备方法。

公开(公告)号：US20070045617A1

公开(公告)日：2007-03-01

申请号：US11506698

申请日：2006-08-18

申请人： Keun Lee

发明人： Keun Lee

IPC分类号： H01L29/08

CPC分类号： H01L27/3276 ,  H01L27/3258 ,  H01L51/5253

摘要： An organic light emitting display (OLED) and a method of manufacturing the OLED is disclosed. The OLED, which has a transparent metal layer substantially preventing an oxide layer from forming on a pad metal, and a method of manufacturing the OLED are disclosed. The OLED includes a substrate, a display unit formed on the substrate including gate and source/drain electrodes, and a pad unit formed on the substrate configured to transmit electrical signals to the display unit. The pad unit includes a wiring line terminal in which a transparent metal layer is formed in a predetermined shape and a predetermined region.

摘要翻译： 公开了一种有机发光显示器（OLED）及其制造方法。 公开了具有基本上防止氧化物层在焊盘金属上形成的透明金属层的OLED以及OLED的制造方法。 OLED包括基板，形成在基板上的显示单元，该显示单元包括栅极和源极/漏极，以及形成在基板上的焊盘单元，该基板被配置为将电信号传输到显示单元。 焊盘单元包括其中透明金属层形成为预定形状和预定区域的布线端子。