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22 条记录 (耗时 0.02 秒)

    USE OF SILICONES TO IMPROVE FIBERGLASS INSULATION PRODUCTS
    5.
    发明申请
    USE OF SILICONES TO IMPROVE FIBERGLASS INSULATION PRODUCTS 审中-公开
    使用硅胶改善纤维绝缘产品

    公开(公告)号：US20120168054A1

    公开(公告)日：2012-07-05

    申请号：US13338316

    申请日：2011-12-28

    申请人： Liang Chen ,  William E. Downey ,  Jesus M. Hernandez-Torres ,  Ying Peng ,  Jonathan Davis

    发明人： Liang Chen ,  William E. Downey ,  Jesus M. Hernandez-Torres ,  Ying Peng ,  Jonathan Davis

    IPC分类号： B32B37/12 ,  B32B37/14 ,  B05D3/00 ,  B05D5/00 ,  B32B37/00

    CPC分类号： C03C25/26 ,  B32B2607/00 ,  C03C25/40 ,  C08L83/00 ,  C09J103/02

    摘要： Dispersions of reactive polysiloxanes are applied to fibrous products, such as construction panels to provide improved properties, like better resistance to staining and discoloration and better adhesion of facer layers The reactive polysiloxane may be applied directly to the fibrous product or mixed into binder compositions prior to application; and may be applied substantially uniformly or non-uniformly. The construction panels may form wall and/or ceiling panels. The reactive polysiloxane may include polysiloxanes functionalized with any of hydrogen, amino, hydroxyl or carboxyl reactive functionalities.

    摘要翻译： 反应性聚硅氧烷的分散体应用于纤维制品，例如建筑面板，以提供改进的性能，如更好的抗染色和变色性能以及更好的粘合层。反应性聚硅氧烷可以直接施加到纤维制品上，或者在 应用; 并且可以基本均匀地或不均匀地施加。 建筑面板可以形成墙壁和/或天花板面板。 反应性聚硅氧烷可以包括用氢，氨基，羟基或羧基反应性官能团中的任何一种官能化的聚硅氧烷。

    Deglaze route to compensate for film non-uniformities after STI oxide processing
    6.
    发明授权
    Deglaze route to compensate for film non-uniformities after STI oxide processing 失效
    DeGaaze路径补偿STI氧化物处理后的膜不均匀性

    公开(公告)号：US07351642B2

    公开(公告)日：2008-04-01

    申请号：US11036536

    申请日：2005-01-14

    申请人： Walter Hartner ,  Joseph Page ,  Jonathan Davis

    发明人： Walter Hartner ,  Joseph Page ,  Jonathan Davis

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31055

    摘要： A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the spin susceptor following a CMP process; positioning a nozzle in the spin processing unit to direct the etching solution along a radius of the wafer; adjusting the flow of the etching solution from the nozzle; adjusting the rotational speed of the spin susceptor to control the residence time of the etching solution; and coordinating the rotational speed of the spin susceptor, flow of etching solution and positioning of the nozzle to maximize the removal of material. The process may be utilized to compensate for the bowl-shaped non-uniformities of an STI oxide. These non-uniformities are compensated for and addressed after a CMP process.

    摘要翻译： 一种用于补偿晶片上的径向不均匀性的方法和方法，包括以下步骤：在CMP工艺之后使膜周围的旋转基座的轴线上的膜的旋转厚度不均匀性居中; 将喷嘴定位在旋转处理单元中以沿着晶片的半径引导蚀刻溶液; 从喷嘴调节蚀刻溶液的流动; 调整旋转基座的旋转速度以控制蚀刻溶液的停留时间; 并协调旋转基座的旋转速度，蚀刻溶液的流动和喷嘴的定位，以最大限度地去除材料。 该方法可用于补偿STI氧化物的碗形不均匀性。 这些非均匀性在CMP过程之后得到补偿和解决。

    Adjustably weighted training device and method of manufacture
    8.
    发明申请
    Adjustably weighted training device and method of manufacture 审中-公开
    可调加权训练装置及其制造方法

    公开(公告)号：US20100081523A1

    公开(公告)日：2010-04-01

    申请号：US12584011

    申请日：2009-08-29

    申请人： Jonathan Davis

    发明人： Jonathan Davis

    IPC分类号： A63B69/00

    CPC分类号： A63B69/0002 ,  A63B59/50 ,  A63B2053/0491 ,  A63B2059/581 ,  A63B2069/0008 ,  A63B2102/18 ,  A63B2220/52

    摘要： The present application is direct to an adjustably weighted baseball bat for use when striking a ball and includes a cylindrical contacting region having a transverse dimension of Dout and defining one or more receiving channels having a transverse dimension of Dint, wherein Dint is less than Dout, a gripping region in communication with the cylindrical contacting region, and one or more weight body assemblies configured to be positioned within the receiving channels and secured therein, the body assemblies defining a passage having a transverse dimension of Dint2 approximately equal to Dint, the body assemblies having an exterior transverse dimension Dout2 approximately equal to Dout.

    摘要翻译： 本申请直接指向可调节加权的棒球棒，以便在击球时使用，并且包括具有Dout的横向尺寸的圆柱形接触区域并且限定具有Dint的横向尺寸的一个或多个接收通道，其中Dint小于Dout， 与所述圆柱形接触区域连通的夹持区域以及被配置为定位在所述接收通道内并固定在其中的一个或多个配重体组件，所述主体组件限定具有大致等于Dint的Dint2的横向尺寸的通道，所述主体组件 具有大致等于Dout的外部横向尺寸Dout2。

    Recessed collar etch for buried strap window formation without poly2
    10.
    发明申请
    Recessed collar etch for buried strap window formation without poly2 审中-公开
    嵌入式套圈蚀刻用于掩埋带窗口形成而不具有poly2

    公开(公告)号：US20060166433A1

    公开(公告)日：2006-07-27

    申请号：US11043756

    申请日：2005-01-26

    申请人： Min-Soo Kim ,  Jonathan Davis ,  Debra Arnold ,  Robert Fuller

    发明人： Min-Soo Kim ,  Jonathan Davis ,  Debra Arnold ,  Robert Fuller

    IPC分类号： H01L21/8242

    CPC分类号： H01L29/66181 ,  H01L27/10867

    摘要： A method for manufacturing a trench capacitor with a reduced resistance in a buried strap window for use in a memory circuit such as a dynamic random access memory circuit may be realized by reducing the number of polysilicon layers that are deposited. The method includes the deposition of a collar material followed by a dry etch of the collar material. The collar material is etched away from the top region leaving a layer of collar material on the wall of the trench between the surface of the first polysilicon layer filling the bottom of the trench and the upper region where the collar material was removed. The second polysilicon layer may be deposited after the collar material has been etched for making contact to other devices.

    摘要翻译： 可以通过减少沉积的多晶硅层的数量来实现用于在诸如动态随机存取存储器电路的存储器电路中使用的掩埋带窗口中具有降低的电阻的沟槽电容器的方法。 该方法包括沉积套环材料，然后对套环材料进行干蚀刻。 从顶部区域蚀刻套环材料，在填充沟槽底部的第一多晶硅层的表面和去除套环材料的上部区域之间在沟槽壁上留下一层环形材料。 在衬套材料被蚀刻以与其它器件接触之后，可以沉积第二多晶硅层。