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    Diamond based substrate for electronic devices
    1.
    发明授权
    Diamond based substrate for electronic devices 有权
    用于电子设备的金刚石基底

    公开(公告)号：US07842134B2

    公开(公告)日：2010-11-30

    申请号：US11909204

    申请日：2006-03-20

    申请人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    发明人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    IPC分类号： C30B25/00

    CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0254 ,  Y10S117/915 ,  Y10T428/30

    摘要： The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.

    摘要翻译： 本发明涉及一种制造用于制造半导体层或器件的衬底的方法，包括以下步骤：提供硅晶片，其包括适于用作CVD金刚石合成的衬底的至少一个第一表面，生长CVD层 具有预定厚度的金刚石并且具有生长面到硅晶片的第一表面上，将硅晶片的厚度减小到预定水平，并且在硅晶片上提供适于进一步合成至少一个半导体的第二表面 适用于电子器件或合成第二表面本身的电子器件的层，以及适用于由紧密附着于硅表面的CVD金刚石层组成的GaN器件生长的衬底。

    Diamond Based Substrate for Electronic Device
    2.
    发明申请
    Diamond Based Substrate for Electronic Device 有权
    基于钻石的电子设备基板

    公开(公告)号：US20080206569A1

    公开(公告)日：2008-08-28

    申请号：US11909204

    申请日：2006-03-20

    申请人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    发明人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    IPC分类号： B32B9/00 ,  H01L21/00

    CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0254 ,  Y10S117/915 ,  Y10T428/30

    摘要： The invention relates to a method of manufacture of a substrate for fabrication of semi-conductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.

    摘要翻译： 本发明涉及一种制造用于制造半导体层或器件的衬底的方法，包括以下步骤：提供硅晶片，其包括适合用作CVD金刚石合成衬底的至少一个第一表面，生长层 的具有预定厚度的CVD金刚石并且具有生长面到硅晶片的第一表面上，将硅晶片的厚度减小到预定水平，并且在硅晶片上提供适于至少进一步合成的第二表面 适用于电子器件的第一半导体层或第二表面本身上的电子器件的合成以及适用于由紧密附着于硅表面的CVD金刚石层组成的GaN器件生长的衬底。