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1.发明授权Apparatus and method for combined micro-scale and nano-scale C-V, Q-V, and I-V testing of semiconductor materials 有权用于半导体材料组合微尺度和纳米级C-V，Q-V和I-V测试的装置和方法公开(公告)号：US09551743B2
公开(公告)日：2017-01-24
申请号：US13398681
申请日：2012-02-16
申请人： Andrew N. Erickson
发明人： Andrew N. Erickson
CPC分类号： G01R31/2648 , G01Q60/30 , G01Q60/38 , G01R27/2605 , G01R31/2601 , G01R31/312
摘要： Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
摘要翻译： 电流电压和电容电压（IV和CV）测量对电子材料特别是半导体的性能的测量至关重要。 用于实现IV和CV测量的半导体测试装置支持半导体晶片，并且提供用于在原子力显微镜或类似探测装置的控制下接触晶片上的表面的探针，用于将探针定位在晶片表面上的期望测量点。 检测表面上探针的接触，并向半导体晶片提供测试电压。 基于测试电压测量由探头感测的电容的第一电路和用于基于测试电压测量由探头感测的福勒诺德海姆电流的互补电路被采用，该探针允许基于该测量电压计算半导体晶片的特性 测量电容和Fowler Nordheim电流。
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2.发明申请APPARATUS AND METHOD FOR COMBINED MICRO-SCALE AND NANO-SCALE C-V, Q-V, AND I-V TESTING OF SEMICONDUCTOR MATERIALS 有权用于组合微尺度和纳米尺度C-V，Q-V和I-V半导体材料测试的装置和方法公开(公告)号：US20160216314A9
公开(公告)日：2016-07-28
申请号：US13398681
申请日：2012-02-16
申请人： Andrew N. Erickson
发明人： Andrew N. Erickson
CPC分类号： G01R31/2648 , G01Q60/30 , G01Q60/38 , G01R27/2605 , G01R31/2601 , G01R31/312
摘要： Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
摘要翻译： 电流电压和电容电压（IV和CV）测量对电子材料特别是半导体的性能的测量至关重要。 用于实现IV和CV测量的半导体测试装置支持半导体晶片，并且提供用于在原子力显微镜或类似探测装置的控制下接触晶片上的表面的探针，用于将探针定位在晶片表面上的期望测量点。 检测表面上探针的接触，并向半导体晶片提供测试电压。 基于测试电压测量由探头感测的电容的第一电路和用于基于测试电压测量由探头感测的福勒诺德海姆电流的互补电路被采用，该探针允许基于该测量电压计算半导体晶片的特性 测量电容和Fowler Nordheim电流。
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公开(公告)号：US20130168929A1
公开(公告)日：2013-07-04
申请号：US13341777
申请日：2011-12-30
CPC分类号： B23Q3/088 , G01R31/2893 , H01L21/68 , H01L21/6838 , Y10T29/49998 , Y10T279/11
摘要： A semiconductor wafer processing tool has a support structure for a coarse motion positioning system. A measurement head having a rigid super structure is supported from the support structure by vibration isolators and a top plate is mounted to the super structure. A vacuum transfer chuck is releasably carried by the coarse motion positioning system and releasably adherable to the top plate by application of vacuum. The vacuum transfer chuck supports a semiconductor wafer.
摘要翻译： 半导体晶片处理工具具有用于粗略定位系统的支撑结构。 具有刚性超结构的测量头由隔振器由支撑结构支撑，并且顶板安装到超级结构。 真空传送卡盘由粗略运动定位系统可释放地承载，并通过施加真空可释放地附着在顶板上。 真空转印卡盘支撑半导体晶片。
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公开(公告)号：US08800998B2
公开(公告)日：2014-08-12
申请号：US13341777
申请日：2011-12-30
IPC分类号： B23B31/30
CPC分类号： B23Q3/088 , G01R31/2893 , H01L21/68 , H01L21/6838 , Y10T29/49998 , Y10T279/11
摘要： A semiconductor wafer processing tool has a support structure for a coarse motion positioning system. A measurement head having a rigid super structure is supported from the support structure by vibration isolators and a top plate is mounted to the super structure. A vacuum transfer chuck is releasably carried by the coarse motion positioning system and releasably adherable to the top plate by application of vacuum. The vacuum transfer chuck supports a semiconductor wafer.
摘要翻译： 半导体晶片处理工具具有用于粗略定位系统的支撑结构。 具有刚性超结构的测量头由隔振器由支撑结构支撑，并且顶板安装到超级结构。 真空传送卡盘由粗略运动定位系统可释放地承载，并通过施加真空可释放地附着在顶板上。 真空转印卡盘支撑半导体晶片。
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5.发明申请APPARATUS AND METHOD FOR COMBINED MICRO-SCALE AND NANO-SCALE C-V, Q-V, AND I-V TESTING OF SEMICONDUCTOR MATERIALS 审中-公开用于组合微尺度和纳米尺度C-V，Q-V和I-V半导体材料测试的装置和方法公开(公告)号：US20100148813A1
公开(公告)日：2010-06-17
申请号：US11779282
申请日：2007-07-18
申请人： Andrew N. Erickson
发明人： Andrew N. Erickson
CPC分类号： G01R31/2648 , G01Q60/30 , G01Q60/38 , G01R27/2605 , G01R31/2601 , G01R31/312
摘要： Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
摘要翻译： 电流电压和电容电压（IV和CV）测量对电子材料特别是半导体的性能的测量至关重要。 用于实现IV和CV测量的半导体测试装置支持半导体晶片，并且提供用于在原子力显微镜或类似探测装置的控制下接触晶片上的表面的探针，用于将探针定位在晶片表面上的期望测量点。 检测表面上探针的接触，并向半导体晶片提供测试电压。 基于测试电压测量由探头感测的电容的第一电路和用于基于测试电压测量由探头感测的福勒诺德海姆电流的互补电路被采用，该探针允许基于该测量电压计算半导体晶片的特性 测量电容和Fowler Nordheim电流。
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6.发明申请APPARATUS AND METHOD FOR COMBINED MICRO-SCALE AND NANO-SCALE C-V, Q-V, AND I-V TESTING OF SEMICONDUCTOR MATERIALS 有权用于组合微尺度和纳米尺度C-V，Q-V和I-V半导体材料测试的装置和方法公开(公告)号：US20120146669A1
公开(公告)日：2012-06-14
申请号：US13398681
申请日：2012-02-16
申请人： Andrew N. Erickson
发明人： Andrew N. Erickson
CPC分类号： G01R31/2648 , G01Q60/30 , G01Q60/38 , G01R27/2605 , G01R31/2601 , G01R31/312
摘要： Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.
摘要翻译： 电流电压和电容电压（IV和CV）测量对电子材料特别是半导体的性能的测量至关重要。 用于实现IV和CV测量的半导体测试装置支持半导体晶片，并且提供用于在原子力显微镜或类似探测装置的控制下接触晶片上的表面的探针，用于将探针定位在晶片表面上的期望测量点。 检测表面上探针的接触，并向半导体晶片提供测试电压。 基于测试电压测量由探头感测的电容的第一电路和用于基于测试电压测量由探头感测的福勒诺德海姆电流的互补电路被采用，该探针允许基于该测量电压计算半导体晶片的特性 测量电容和Fowler Nordheim电流。
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公开(公告)号：US5713667A
公开(公告)日：1998-02-03
申请号：US482229
申请日：1995-06-07
申请人： Roger Alvis , Andrew N. Erickson , Ayesha R. Raheem Kizchery , Jeremias D. Romero , Bryan M. Tracy
发明人： Roger Alvis , Andrew N. Erickson , Ayesha R. Raheem Kizchery , Jeremias D. Romero , Bryan M. Tracy
IPC分类号： G01K7/01
CPC分类号： G01Q60/58 , B82Y35/00 , G01K7/01 , Y10S977/875
摘要： A diode is formed at the tip of a pointed portion of a probe of a scanning probe microscope. When the diode is forward biased, the current through the diode varies with the temperature of the diode. The magnitude of the current is an indication of the temperature of the tip of the probe. If the tip is scanned over a surface, a thermal map of the surface can be made and hot spots on the surface located. In some embodiments, the pointed portion of the probe is made of a semiconductor material (for example, silicon). A layer of a metal (for example, platinum) is made to contact the semiconductor material of the pointed portion only at the tip of the pointed portion, thereby forming a very small temperature sensing Schottky diode at the tip of the pointed portion.
摘要翻译： 在扫描探针显微镜的探针的尖部的尖端形成二极管。 当二极管正向偏置时，通过二极管的电流随着二极管的温度而变化。 电流的大小表示探针尖端的温度。 如果尖端在表面上扫描，则可以制作表面的热图，并且表面上的热点位于。 在一些实施例中，探针的尖锐部分由半导体材料（例如硅）制成。 使一层金属（例如铂）仅在尖部的尖端与尖部的半导体材料接触，从而在尖部的尖端处形成非常小的温度感测肖特基二极管。
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公开(公告)号：US5710052A
公开(公告)日：1998-01-20
申请号：US543979
申请日：1995-10-17
申请人： Roger L. Alvis , Andrew N. Erickson
发明人： Roger L. Alvis , Andrew N. Erickson
CPC分类号： G01R31/2648 , H01L22/14 , Y10S977/854
摘要： An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.
摘要翻译： 通过测量沿着掺杂剂等浓度的路径的电参数来测量半导体的二维掺杂分布的精确方法。 提供了半导体集成电路的薄的垂直或水平切片，并且被探测以允许通过单一浓度区域测量电参数。
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