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    Molecular memory device
    1.
    发明申请
    Molecular memory device 有权
    分子记忆装置

    公开(公告)号：US20050116256A1

    公开(公告)日：2005-06-02

    申请号：US10899873

    申请日：2004-07-27

    申请人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    发明人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    IPC分类号： G11C13/02 ,  H01L31/109

    CPC分类号： G11C13/0009 ,  B82Y10/00 ,  G11C13/0014 ,  G11C2213/13 ,  G11C2213/77 ,  Y10S977/943

    摘要： A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

    摘要翻译： 提供了一种新颖的记忆单元，其具有包括分子系统中分子系统和分子系统分布的离子络合物的活性区域。 布置一对写入电极用于将信息写入存储单元。 有源区域响应于在一对写入电极之间施加的电场，用于在导通状态和断开状态之间切换。 有源区在断开状态下具有高阻抗，在导通状态下具有低阻抗。 一对读取电极用于检测有源区域是处于导通状态还是处于断开状态以从存储单元读取信息。 读取电极可以由具有不同功函数的不同材料制成，以减少漏电流。

    Molecular memory device
    2.
    发明授权
    Molecular memory device 有权
    分子记忆装置

    公开(公告)号：US07157750B2

    公开(公告)日：2007-01-02

    申请号：US10899873

    申请日：2004-07-27

    申请人： Vladimer Bulovic ,  Aaron Mandell ,  Andrew Perlman

    发明人： Vladimer Bulovic ,  Aaron Mandell ,  Andrew Perlman

    IPC分类号： H01L31/00

    CPC分类号： G11C13/0009 ,  B82Y10/00 ,  G11C13/0014 ,  G11C2213/13 ,  G11C2213/77 ,  Y10S977/943

    摘要： A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

    摘要翻译： 提供了一种新颖的记忆单元，其具有包括分子系统中分子系统和分子系统分布的离子络合物的活性区域。 布置一对写入电极用于将信息写入存储单元。 有源区域响应于在一对写入电极之间施加的电场，用于在导通状态和断开状态之间切换。 有源区在断开状态下具有高阻抗，在导通状态下具有低阻抗。 一对读取电极用于检测有源区域是处于导通状态还是处于断开状态以从存储单元读取信息。 读取电极可以由具有不同功函数的不同材料制成，以减少漏电流。

    Molecular memory device
    5.
    发明授权
    Molecular memory device 有权
    分子记忆装置

    公开(公告)号：US06781868B2

    公开(公告)日：2004-08-24

    申请号：US10139747

    申请日：2002-05-07

    申请人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    发明人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    IPC分类号： G11C1300

    CPC分类号： G11C13/0009 ,  B82Y10/00 ,  G11C13/0014 ,  G11C2213/13 ,  G11C2213/77 ,  Y10S977/943

    摘要： A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

    摘要翻译： 提供了一种新颖的记忆单元，其具有包括分子系统中分子系统和分子系统分布的离子络合物的活性区域。 布置一对写入电极用于将信息写入存储单元。 有源区域响应于在一对写入电极之间施加的电场，用于在导通状态和断开状态之间切换。 有源区在断开状态下具有高阻抗，在导通状态下具有低阻抗。 一对读取电极用于检测有源区域是处于导通状态还是处于断开状态以从存储单元读取信息。 读取电极可以由具有不同功函数的不同材料制成，以减少漏电流。

    Electrically addressable memory switch
    9.
    发明授权
    Electrically addressable memory switch 失效
    电可寻址存储器开关

    公开(公告)号：US07145793B1

    公开(公告)日：2006-12-05

    申请号：US10873069

    申请日：2004-06-21

    申请人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    发明人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

    IPC分类号： G11C13/00

    CPC分类号： H01L51/0541 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C2213/13 ,  H01L29/685 ,  H01L51/0512 ,  H01L51/0558 ,  H01L51/0591 ,  H01L51/0595

    摘要： A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.

    摘要翻译： 一种新颖的开关装置设置有布置在第一和第二电极之间的有源区，并且包括分布在系统中的分子系统和离子络合物。 提供控制电极，用于控制施加到有源区域的电场，当具有预定极性和强度的电场施加预定时间时，该有源区域在高阻抗状态和低阻抗状态之间切换。