公开(公告)号：US06350681B1

公开(公告)日：2002-02-26

申请号：US09780549

申请日：2001-02-09

申请人： Anseime Chen ,  Chingfu Lin ,  Yi-Fang Cheng ,  I-Hsiung Huang

发明人： Anseime Chen ,  Chingfu Lin ,  Yi-Fang Cheng ,  I-Hsiung Huang

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a multiple layer damascene structure. A substrate comprising of a multi-layered stack that includes, from bottom to top, a metallic layer, a first etching stop layer, a first dielectric layer, a second etching stop layer and a second dielectric layer is provided. A photoresist layer having large area openings and vias pattern is formed over the substrate. Large area openings and vias that expose a portion of the first etching stop layer are formed in the substrate. A barrier layer that fills all the large area openings and vias is formed over the substrate. Chemical-mechanical polishing is conducted to remove a portion of the barrier layer and expose the second dielectric layer. A second photoresist having a trench pattern thereon is formed over the substrate. Using the second photoresist as a mask, etching is conducted so that the second etching stop layer around the vias is exposed. Lastly, the barrier layer is removed.

摘要翻译： 一种形成多层镶嵌结构的方法。 提供一种包括多层叠层的衬底，其包括从底部到顶部的金属层，第一蚀刻停止层，第一介电层，第二蚀刻停止层和第二介电层。 在衬底上形成具有大面积开口和通孔图案的光致抗蚀剂层。 在基板上形成露出一部分第一蚀刻停止层的大面积开口和通孔。 填充所有大面积开口和通孔的阻挡层形成在衬底上。 进行化学机械抛光以去除阻挡层的一部分并暴露第二介电层。 其上具有沟槽图案的第二光致抗蚀剂形成在衬底上。 使用第二光致抗蚀剂作为掩模，进行蚀刻，使得通孔周围的第二蚀刻停止层露出。 最后，去除阻挡层。

公开(公告)号：US06489085B2

公开(公告)日：2002-12-03

申请号：US09742960

申请日：2000-12-20

申请人： I-Hsiung Huang ,  Anderson Chang ,  Chien-Wen Lai ,  Anseime Chen

发明人： I-Hsiung Huang ,  Anderson Chang ,  Chien-Wen Lai ,  Anseime Chen

IPC分类号： G03F740

CPC分类号： G03F7/40 ,  G03F7/038

摘要： A thermal flow photolithographic process. A thermal flow photoresist is provided. A cross-linking agent is added to the thermal flow photoresist to form a high-temperature cross-linking photoresist material. A substrate having an insulation layer thereon is provided. The high-temperature cross-linking photoresist is deposited over the insulation layer. The cross-linked photoresist layer on the insulation layer is exposed to light, chemically developed and then heated to cause thermal flow.

摘要翻译： 热流光刻工艺。 提供热流光致抗蚀剂。 将交联剂添加到热流光致抗蚀剂中以形成高温交联光致抗蚀剂材料。 提供其上具有绝缘层的基板。 高温交联光刻胶沉积在绝缘层上。 绝缘层上的交联光致抗蚀剂层暴露于光，化学显影，然后加热以引起热流。

公开(公告)号：US06444410B1

公开(公告)日：2002-09-03

申请号：US09688606

申请日：2000-10-14

申请人： I-Hsiung Huang ,  Anseime Chen ,  Chieh-Ming Wang

发明人： I-Hsiung Huang ,  Anseime Chen ,  Chieh-Ming Wang

IPC分类号： G03F726

CPC分类号： G03F7/40

摘要： A method of improving a photoresist profile. After a photoresist layer is developed, a hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. The photoresist layer is thus able to reflow, so that the profile can be modified. Or alternatively, the hard bake step can be replace by first performing a hard bake at a temperature higher than the glass transition temperature, followed by performing a flow bake at a temperature lower than the glass transition temperature.

摘要翻译： 改善光刻胶轮廓的方法。 在光致抗蚀剂层显影之后，在低于光致抗蚀剂层的玻璃化转变温度的温度下进行硬烘烤。 因此，光致抗蚀剂层能够回流，使得可以修改轮廓。 或者，可以通过首先在高于玻璃化转变温度的温度下进行硬烘烤来进行硬烘烤步骤，然后在低于玻璃化转变温度的温度下进行流动烘烤。

公开(公告)号：US06492097B1

公开(公告)日：2002-12-10

申请号：US09666755

申请日：2000-09-21

申请人： Anseime Chen ,  Chieh-Ming Wang ,  I-Hsiung Huang

发明人： Anseime Chen ,  Chieh-Ming Wang ,  I-Hsiung Huang

IPC分类号： G03C500

CPC分类号： G03F7/70466 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441

摘要： A process for increasing the line width window in a semiconductor process, which is suitable to be used to increase the line width widow at the time of the exposure of an iso-line pattern under 0.13 &mgr;m. This process includes: first forming a positive photoresist layer on the base, then using the first photomask to conduct the first exposure step on the positive photoresist layer. The first photomask is designed to have at least one main line that is opaque. On each of the two sides of the main line, there is a scattering bar. The width of the two scattering bars is greater than ⅓ of the wavelength of the light source that is used, and less than the width of the main line. The second photomask is used to conduct the second exposure step on the positive photoresist layer. The second photomask is designed to have at least two iso-lines that are pervious to light, and each of the two iso-lines is located at one of the two positions corresponding to the two scattering bars of the first photomask design. The width of each iso-line is greater than that of the corresponding scattering bar and the distance from each edge of the iso-line to each edge of the corresponding scattering bar is greater than about 60 nm.

摘要翻译： 一种用于增加半导体工艺中的线宽窗口的方法，其适用于在0.13μm下等距线图案的曝光时增加线宽寡居。 该方法包括：首先在基底上形成正性光致抗蚀剂层，然后使用第一光掩模在正性光致抗蚀剂层上进行第一曝光步骤。 第一个光掩模被设计为具有至少一条不透明的主线。 在主线两侧各有一个散射条。 两个散射棒的宽度大于使用的光源的波长的1/3，并且小于主线的宽度。 第二光掩模用于在正性光致抗蚀剂层上进行第二曝光步骤。 第二光掩模被设计为具有至少两个能够透光的等分线，并且两个等分线中的每一个位于对应于第一光掩模设计的两个散射条的两个位置中的一个位置。 每个等轴线的宽度大于对应散射棒的宽度，并且等轴线的每个边缘到相应散射条的每个边缘的距离大于约60nm。

公开(公告)号：US06312855B1

公开(公告)日：2001-11-06

申请号：US09444466

申请日：1999-11-22

申请人： Jiunn-Ren Hwang ,  I-Hsiung Huang ,  Anseime Chen

发明人： Jiunn-Ren Hwang ,  I-Hsiung Huang ,  Anseime Chen

IPC分类号： G03F900

CPC分类号： G03F1/28

摘要： A three-phase phase shift mask. On a transparent substrate, a non-transparent pattern covering a portion of the transparent substrate is formed, while the other portion of the substrate is remained exposed. A proximity region around a comer of the non-transparent pattern is equally partitioned three phase-shift areas different from each other with a phase shift of 120°. The formation of these three phase-shift areas uses two etching steps to form a first and a second phase-shift areas, while a portion of the exposed substrate is etched twice as a third phase-shift area.

摘要翻译： 三相相移掩模。 在透明基板上，形成覆盖透明基板的一部分的不透明图案，同时基板的另一部分保持露出。 不透明图案的周围的邻近区域被相等地划分为相位相差120°的三个相移区域。 这三个相移区域的形成使用两个蚀刻步骤来形成第一和第二相移区域，而暴露的衬底的一部分被蚀刻两次作为第三相移区域。

公开(公告)号：US6080527A

公开(公告)日：2000-06-27

申请号：US442861

申请日：1999-11-18

申请人： I-Hsiung Huang ,  Anseime Chen ,  Jiunn-Ren Huang

发明人： I-Hsiung Huang ,  Anseime Chen ,  Jiunn-Ren Huang

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/36

摘要： An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.

摘要翻译： 一种用于在负光致抗蚀剂上整流图案的光学邻近校正方法。 集成电路的线路图案分为L形区域或T形区域。 L形或T形区域进一步分解成矩形斑块。 每个矩形贴片的面积被适当地减小并再现到光掩模上。 光掩模用于形成校正的光致抗蚀剂图案。

公开(公告)号：US06323123B1

公开(公告)日：2001-11-27

申请号：US09655957

申请日：2000-09-06

申请人： Chih-Chien Liu ,  Cheng-Yuan Tsai ,  Anseime Chen ,  Ming-Sheng Yang

发明人： Chih-Chien Liu ,  Cheng-Yuan Tsai ,  Anseime Chen ,  Ming-Sheng Yang

IPC分类号： H01L214763

CPC分类号： H01L21/76808

摘要： A barrier layer is formed over the substrate by deposition, and a first dielectric is formed over the diffusion barrier layer by deposition. A etching stop layer and a second dielectric are formed in turn over the first dielectric by deposition. Next, a hard mask is formed on the second dielectric. Then, a photoresist layer is formed over the hard mask, and defining the photoresist layer. And then dry etching is carried out by means of the photoresist layer as the mask to form a via hole. A gap-filling material is filled on the second dielectric and into the via hole by conventional partial-cured (or un-cured) spin-on glass method. A anti-reflection layer is formed over the second dielectric by deposition. Another photoresist layer is formed on the anti-reflection coating and defined the photoresist layer, and to expose the partial surface of the via hole and the anti-reflection coating. Dry etching is proceed by means of the photoresist layer as a mask, and etching stop layer is as a etching terminal point to remove exposed partial surface of the bottom anti-reflection coating so as to form a trench. Then, the gap-filling material is removed by wet etching. Then a barrier layer is formed, and the seed layer is deposition on the barrier layer, and forming a conduct electricity metal layer on the seed layer. And then, the barrier layer and the anti-reflection coating are removed. Final, a barrier layer is deposition again.

摘要翻译： 通过沉积在衬底上形成阻挡层，并且通过沉积在扩散阻挡层上形成第一电介质。 通过沉积在第一电介质上依次形成蚀刻停止层和第二电介质。 接下来，在第二电介质上形成硬掩模。 然后，在硬掩模上形成光致抗蚀剂层，并且限定光致抗蚀剂层。 然后通过光致抗蚀剂层作为掩模进行干蚀刻以形成通孔。 间隙填充材料通过常规的部分固化（或未固化）旋涂玻璃方法填充在第二电介质上并进入通孔中。 通过沉积在第二电介质上形成抗反射层。 在防反射涂层上形成另一光致抗蚀剂层并限定光致抗蚀剂层，并露出通孔和防反射涂层的部分表面。 通过光致抗蚀剂层作为掩模进行干蚀刻，并且蚀刻停止层作为蚀刻终点以去除底部防反射涂层的暴露的部分表面以形成沟槽。 然后，通过湿蚀刻除去间隙填充材料。 然后形成阻挡层，种子层沉积在阻挡层上，并在籽晶层上形成导电电金属层。 然后，去除阻挡层和防反射涂层。 最后，阻挡层又是沉积。

公开(公告)号：US06420791B1

公开(公告)日：2002-07-16

申请号：US09448083

申请日：1999-11-23

申请人： Chien-Chao Huang ,  Anseime Chen ,  Shih-Che Wang

发明人： Chien-Chao Huang ,  Anseime Chen ,  Shih-Che Wang

IPC分类号： H01L23544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： An alignment mark design has a metal plateau and a metal material formed over a substrate. The metal plateau is within a first dielectric layer. Openings within a second dielectric layer above the first dielectric layer are filled with a metal material. The metal material and the second dielectric layer alternate so that a part of the exposure light passing through the second dielectric layer between sections of the metal material can be reflected into an alignment system by the metal plateau.

摘要翻译： 对准标记设计具有在基板上形成的金属平台和金属材料。 金属平台位于第一电介质层内。 在第一介电层上方的第二电介质层内的开口用金属材料填充。 金属材料和第二电介质层交替使得通过金属材料的部分之间通过第二介电层的曝光光的一部分可以通过金属平台反射到对准系统中。

公开(公告)号：US06417096B1

公开(公告)日：2002-07-09

申请号：US09611738

申请日：2000-07-07

申请人： Anseime Chen ,  Jun Maeda ,  Sheng-Yueh Chang ,  Sung-Hsiung Wang

发明人： Anseime Chen ,  Jun Maeda ,  Sheng-Yueh Chang ,  Sung-Hsiung Wang

IPC分类号： H01L214763

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76807

摘要： A substrate is provided. A first dielectric layer is formed over the substrate by deposition. Etching stop layer and a second dielectric layer are formed in turn over the first dielectric. Next, the second dielectric layer is dealt with Lewis acid. Then, a first photoresist layer is defined and formed over the second dielectric layer. And then dry etching is carried out by means of the first photoresist layer as the mask to form a via hole. The surface of the second dielectric layer and the via hole are treated with Lewis acid. Subsequently, the second photoresist layer is defined and formed on the second dielectric layer. Dry etching is proceed, and etching stop layer is as a etching terminal point to remove exposed partial surface of the second dielectric layer so as to form a trench having larger horizontal size than the via hole. Subsequently, the second photoresist layer is removed to form the opening of the damascene.

摘要翻译： 提供基板。 通过沉积在衬底上形成第一介电层。 蚀刻停止层和第二介电层依次形成在第一电介质上。 接下来，第二介电层被处理路易斯酸。 然后，在第二介电层上限定并形成第一光致抗蚀剂层。 然后通过第一光致抗蚀剂层作为掩模进行干蚀刻以形成通孔。 用路易斯酸处理第二介电层和通孔的表面。 随后，第二光致抗蚀剂层被限定并形成在第二介电层上。 进行干蚀刻，并且蚀刻停止层作为蚀刻终点以去除第二电介质层的暴露的部分表面，以形成具有比通孔更大的水平尺寸的沟槽。 随后，去除第二光致抗蚀剂层以形成大马士革的开口。

公开(公告)号：US06680252B2

公开(公告)日：2004-01-20

申请号：US09854966

申请日：2001-05-15

申请人： Anseime Chen ,  Hui-Ling Huang ,  Vencent Chang ,  Andersen Chang

发明人： Anseime Chen ,  Hui-Ling Huang ,  Vencent Chang ,  Andersen Chang

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0276

摘要： The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechanical polishing. The present invention applies a low temperature to bake the coated BARC layer before BARC material cross-links and induces the anti-reflective characteristic. Then, the BARC layer is planarized by chemical mechanical polishing. Next, a high temperature baking of the BARC layer is provided before coating the photoresist, so formation of the BARC layer is controlled with minimized variation in surface level and has the antireflective characteristic. Thus, the profile distortion on the via and the critical dimension control for the via are improved by patterning the via on a planar and an anti-reflective surface.

摘要翻译： 本发明涉及一种用于在双镶嵌工艺中平坦化BARC层的方法。 为了形成双镶嵌互连结构，通过使用本发明，通过化学机械抛光实现了BARC层的平面形貌。 本发明应用低温以在BARC材料交联之前烘烤涂覆的BARC层并诱导抗反射特性。 然后，BARC层通过化学机械抛光进行平面化。 接下来，在涂覆光致抗蚀剂之前提供BARC层的高温烘烤，因此以最小化的表面水平的变化来控制BARC层的形成并具有抗反射特性。 因此，通过在平面和抗反射表面上图形化通孔来改善通孔上的轮廓畸变和通孔的临界尺寸控制。